December 2024
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26 Reads
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1 Citation
ACS Nano
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December 2024
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26 Reads
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1 Citation
ACS Nano
August 2024
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90 Reads
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21 Citations
Chemical Reviews
February 2024
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196 Reads
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8 Citations
Nature Materials
Antiferromagnets hosting real-space topological textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, they have only been epitaxially fabricated on specific symmetry-matched substrates, thereby preserving their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, restricting the scope of fundamental and applied investigations. Here we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of α-Fe2O3. First, we show—via transmission-based antiferromagnetic vector mapping—that flat nanomembranes host a spin-reorientation transition and rich topological phenomenology. Second, we exploit their extreme flexibility to demonstrate the reconfiguration of antiferromagnetic states across three-dimensional membrane folds resulting from flexure-induced strains. Finally, we combine these developments using a controlled manipulator to realize the strain-driven non-thermal generation of topological textures at room temperature. The integration of such free-standing antiferromagnetic layers with flat/curved nanostructures could enable spin texture designs via magnetoelastic/geometric effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.
December 2023
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27 Reads
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7 Citations
December 2023
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70 Reads
November 2023
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16 Reads
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4 Citations
IEEE Transactions on Neural Networks and Learning Systems
Analog resistive random access memory (RRAM) devices enable parallelized nonvolatile in-memory vector-matrix multiplications for neural networks eliminating the bottlenecks posed by von Neumann architecture. While using RRAMs improves the accelerator performance and enables their deployment at the edge, the high tuning time needed to update the RRAM conductance states adds significant burden and latency to real-time system training. In this article, we develop an in-memory discrete Fourier transform (DFT)-based convolution methodology to reduce system latency and input regeneration. By storing the static DFT/inverse DFT (IDFT) coefficients within the analog arrays, we keep digital computational operations using digital circuits to a minimum. By performing the convolution in reciprocal Fourier space, our approach minimizes connection weight updates, which significantly accelerates both neural network training and interference. Moreover, by minimizing RRAM conductance update frequency, we mitigate the endurance limitations of resistive nonvolatile memories. We show that by leveraging the symmetry and linearity of DFT/IDFTs, we can reduce the power by 1.57 for convolution over conventional execution. The designed hardware-aware deep neural network (DNN) inference accelerator enhances the peak power efficiency by 28.02 and area efficiency by 8.7 over state-of-the-art accelerators. This article paves the way for ultrafast, low-power, compact hardware accelerators.
June 2023
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274 Reads
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6 Citations
The thermal conductivity measurement of films with submicrometer thicknesses is difficult due to their exceptionally low thermal resistance, which makes it challenging to accurately measure the temperature changes that occur as heat flows through the film. Thus, specialized and sensitive measurement techniques are required. 3ω method is a widely used and reliable tool for measuring the thermal conductivity of films. However, the high in-plane thermal conductivity in thin films results in rapid heat dissipation across the thin film, resulting in poor measurement sensitivity and making it difficult to accurately measure the temperature gradient with the traditional 3ω method. Also, the traditional 3ω method requires cross-plane thermal conductivity to derive the in-plane counterpart. Here, we introduce a dual-domain 3ω method that adopts AC-modulated heating and electrode arrays facilitating surface temperature profiling: (1) the sensitivity was significantly improved due to the employment of low-thermal-conductivity-substrate, and (2) cross-plane thermal conductivity is not required for the analysis of in-plane counterpart. This measurement platform allows us to control heat penetration in depth via varied heating frequencies as well as spatial temperature detection through laterally distributed electrodes on the thin film surface. By utilizing the described method, we have determined the in-plane thermal conductivity of a copper film, having a thickness of 300 nm, which was found to be 346 Wm−1K−1 and validated by the Wiedemann–Franz law.
June 2023
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69 Reads
Journal of Lightwave Technology
In recent years, heterogeneous integration (HI) has become a game-changing technology for the construction of complex photonic integrated circuits. Comparing to monolithic integration (MI) technique, chips are stacked or add-on during HI. These components are attached to the substrate using an active or passive alignment scheme. As the passive alignment system does not actively search for the optical axis, it allows more die to be bonded per unit time as compared to active alignment. The main challenge is then to obtain consistent sub-micron alignment accuracy during chip manufacturing process to ensure good device performance. To achieve sub-micron alignment accuracy, slide-stop structures with multi-axial elastic averaging coupling designs are implemented. In this work, optical dies are bonded to silicon interposers with two geometrically different slide-stop designs: triangle and rectangle in designs, respectively. Due to an additional surface contact and smaller internal angle for the former, the triangle slide-stop design improves the translational-axes and rotational-axis post-bond alignment accuracy, from (Reference) −0.27 μm ± 2.54 μm @ 3sigma to (slide-stop) −0.09 μm ± 1.37 μm @ 3sigma, (Reference) 1.00 μm ± 3.19 μm @ 3sigma to (slide-stop) 0.39 μm ± 1.29 μm @ 3sigma, and (Reference) 0.06° ± 0.34° @ 3sigma to (slide-stop) 0.0002° ± 0.15° @ 3sigma respectively. Finally, narrower optical power output distribution of P-down bonded lasers with triangle slide-stop over lasers with rectangle slide-stop is demonstrated.
June 2023
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28 Reads
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15 Citations
June 2023
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3 Reads
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2 Citations
... In terms of geographic distribution, the majority of studies originated from North America (45%), followed by Europe (30%), Asia (15%), and other regions (10%), highlighting a concentration of (Table 1 and Figure 2) AI research in developed countries with more advanced healthcare infrastructures and access to large-scale data [21][22][23][24][25][26]. Regarding data sources, 60% of studies used electronic health records (EHRs), leveraging routine clinical data such as lab values and dialysis session logs [27][28][29][30][31]. Another 25% integrated data from wearable or IoT devices, capturing real-time physiological metrics like blood pressure or bioimpedance, reflecting a growing trend toward continuous monitoring [32][33][34][35]. Meanwhile, 15% utilized imaging data, particularly Doppler ultrasound, in vascular access management, underscoring the diversity of data modalities feeding AI systems in this clinical domain [36][37][38]. ...
August 2024
Chemical Reviews
... [1][2][3][4][5][6][7] These membranes often exhibit enhanced flexibility due to their reduced third dimension, allowing them to be bent or wrinkled, which makes possible the formation of 3D structures. [8][9][10][11][12][13][14][15] To date, research on freestanding membranes has focused primarily on oxides, since oxide thin films can be epitaxially deposited onto sacrificial buffer layers, which are DOI: 10.1002/adma.202505707 then removed to release the thin film structures. [16][17][18] Extending this approach to form freestanding membranes from multilayered metal thin films offers exciting opportunities, particularly in spintronics. ...
February 2024
Nature Materials
... It has long been believed that there are high-density deep states located slightly above the valence band (EV) in oxide semiconductors, as firstly reported through hard X-ray photoelectron spectroscopy on the order of 10 20 /cm 3 18, 19 . The detected highdensity deep states are attributed to the performance of IGZO transistors, such as negative bias illumination stability (NBIS) [20][21][22][23] , positive bias stability (PBS) 22, 24, 25 , etc., which affect the performance of IGZO transistors, especially in display applications. ...
December 2023
... The traditional von Neumann architecture, which relies on logical operations performed by fundamental components like transistors, has served as the backbone of computing for decades. However, with the rapid expansion of AI applications, there has been a notable shift toward neuromorphic chips, such as memristors and memtransistors [8][9][10][11][12]. These devices enable parallel matrix operations and are better suited for the complex computational demands of AI workloads. ...
November 2023
IEEE Transactions on Neural Networks and Learning Systems
... Similarly, the anneal process in a reducing environment helps to increase the number of oxygen vacancies. 37 In addition to the anneal process, oxygen vacancy concentrations can also be controlled by adjusting the ratio of cations with different metal-oxygen bond dissociation energies, or by doping with metal elements that exhibit varying metal-oxygen bond dissociation energies. [38][39][40] Therefore, ...
June 2023
... The simplicity of data processing [17], and its power for measurement of various structures (nano to micro-scale) [18] make it attractive for a wide range of samples that have different levels of thermal conductivity. Some examples from the literature of the last two years can be listed as follows: Carbon nanowalls [19], high conductive thin films [20], copper wire [21], single-crystalline bulk [22], thermal interface materials [23], perovskite thin films [24], bacterial nanocellulose [25], oil-based nanofluids [26], magnetic nanofluids [27]. ...
June 2023
... During the ERS operation, voltage drops more on the HZO layer in OS FeFET compared to a poly-Si device which has a low-k interfacial layer, resulting in a more effective ferroelectric switching. Enhancement from mobility of OS channel32) and ferroelectricity material with larger polarization charge33) ...
March 2023
... Conjugated polymers (CPs) are at the heart of numerous current and emerging technologies spanning optoelectronics, 1-4 energy conversion 5,6 and storage, 7,8 healthcare and biomedicine, [9][10][11][12] sensing, [13][14][15] information science, 16,17 consumer applications, 18,19 and many others. 11,[20][21][22] Doping, a process by which charge carriers are controllably introduced, is crucial to the manifold functionality and high performance exhibited by these materials. ...
March 2023
ACS Nano
... 5,6 However, AOS faces the charge-trapping issue and shows clockwise (CW) hysteresis in the bipolar sweep. 7,8 Therefore, to reduce the CW hysteresis or even to have counterclockwise (CCW), there are various approaches, such as gate stack engineering by the ferroelectrics, 9,10 defect engineering, [11][12][13] or interface dipole (ID) formation. 14,15 Therefore, this study investigates the formation of interface dipoles (ID) to mimic FeFET-like behavior. ...
April 2023
IEEE Transactions on Electron Devices
... The 3D sequential stacking for a 1T FeFET memory array can be implemented as shown in Fig.4, where planar or vertical gate-all-around (VC-GAA) FeFETs are stacked layer by layer in a sequential manner. In this design, metal-oxide semiconductor channel is heavily investigated due to its low deposition temperature and flexible deposition methods including sputtering and also atomic-layer deposition [153][154][155] . A major benefit of using metal-oxide semiconductor channel is to avoid the formation of a defective interfacial layer between the semiconductor and the HfO 2 -based ferroelectric layer, which plays a major role in contributing to endurance degradation in Si-based FeFETs 46, 50 . ...
December 2022