Aaron Voon-Yew Thean’s research while affiliated with National University of Singapore and other places

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Publications (60)


High-Speed and Low-Energy Resistive Switching with Two-Dimensional Cobalt Phosphorus Trisulfide for Efficient Neuromorphic Computing
  • Article

December 2024

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26 Reads

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1 Citation

ACS Nano

Yun Ji

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Baoshan Tang

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[...]

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Kah-Wee Ang


Membrane design and characterization
a, Free-standing membranes are prepared by the selective water etching of SAO (yellow), followed by the direct/indirect transfer of membranes (orange) onto desired silicon (Si) or silicon nitride (Si3N4) supports (blue). Indirect transfer requires an intermediate support such as PMMA (purple) to hold the membranes after water etching. For type-C membranes, a buffer layer made of LAO (green) and ultrathin STO (grey) was also grown (Methods). Layer thickness is not to scale. b, Large-area optical image of a buffered α-Fe2O3 membrane transferred onto Si. Scale bar, 1 mm. c, XRD (2θ–ω scans) of as-grown α-Fe2O3|LAO|STO|SAO film on an STO substrate (grey curve) and detached α-Fe2O3|LAO|STO membrane on a SiO2/Si substrate (orange curve). The out-of-plane (006) Bragg peak of α-Fe2O3 lies in the proximity of the (111) LAO buffer and (111) STO substrate peaks. The STO layer in the buffer is too thin to contribute a sizable signal in the detached sample. The inset displays the rocking curve (ω scan) of the detached membrane, exhibiting a full-width at half-maximum of ∼1.1°. d,e, SAED patterns of free-standing unbuffered (type-B) (d) and buffered (type-C) (e) α-Fe2O3 membranes obtained with an electron beam incident along the crystallographic c axis. f, Simulated SAED pattern of the type-C membrane (Methods) corresponding to the pattern in e. The simulation confirms that the satellite peaks in e emerge due to a lattice-mismatch moiré pattern24,25, resulting from the electron-beam interference across α-Fe2O3 and LAO lattices in the buffered membrane.
Morin transition and generation of topological AFM textures
a, Geometry of the STXM measurement, performed using linearly polarized X-rays (k→\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\overrightarrow{k}$$\end{document}) that are normally incident onto the sample. b, Temperature evolution of the AFM STXM contrast obtained at the Fe L3-edge whilst warming the buffered membrane (type C) across TM, in the temperature range of 298–314 K. The OOP and IP contrasts are indicated in purple and yellow/orange, respectively. Scale bars, 2 µm. All the images were recorded at the same position. The energy-contrast scale was slightly varied across the transition to aid visualization¹⁰. c, Néel vector maps performed at 314 K (T > TM), produced by rotating the sample azimuth shown in a. The R–G–B colours (key inset in c, top) and thin white bars represent the IP AFM orientations. The white regions represent OOP orientations, whereas the black regions highlight the IP AFM directions, substantially deviating from the R–G–B directions. The yellow circles and squares indicate AFM merons and antimerons, respectively. The width of the images is ∼1.5 μm.
Flexure-driven spatial reconfiguration of AFM states
a, Optical microscopy image indicating the folded region being studied with a black arrow. b, Three-dimensional height profile map of the folded region in a buffered membrane (type C), shown from the top, obtained using confocal microscopy (Methods). The colour legend indicates the height profile. Scale bar, 20 µm. c, Fe L3-edge X-ray transmission contrast obtained at the right side of the folded membrane, as approximately indicated with a dashed box in b. Our characterization confirmed that the buffered membrane was oriented with the α-Fe2O3 side facing up and the buffer side facing down (Methods). Scale bar, 2 µm. d–f, AFM STXM contrast obtained across different temperatures: T>TMFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T > {T}_{{\rm{M}}}^{\;{\rm{FF}}}$$\end{document} (d), T≈TMFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T \approx {T}_{{\rm{M}}}^{\;{\rm{FF}}}$$\end{document} (e) and T<TMFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$T < {T}_{{\rm{M}}}^{\;{\rm{FF}}}$$\end{document} (f). The OOP and IP contrasts are indicated in purple and yellow/orange, respectively, as that in Fig. 2. The AFM textures across the folds were mapped out by ‘stitching’ together multiple images, and optimizing the focal point for each corresponding region.
Flexure strain and anisotropy model
a,b, Non-uniform strain distribution, εxx, in the α-Fe2O3 layer as a function of thickness and length, across folds in buffered AFM membranes (type C) with α-Fe2O3-side-facing-up (a) and buffer-side-facing-up (b) configurations. Membrane thickness has been exaggerated to aid the visualization of the non-uniform strain distribution as a function of thickness. The neutral line (εxx ≈ 0), indicated in yellow, is located at very different positions in a and b relative to the middle of the α-Fe2O3 layer, resulting in strong variations in the average and maximum strains in the AFM layer. c,d, Evolution of the thickness-averaged strain in the α-Fe2O3 layer, 〈εxx〉z,F, and the corresponding local TM/TMFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${T}_{{\rm{M}}}\,/\,{T}_{{\rm{M}}}^{\;{\rm{FF}}}$$\end{document} for the two configurations given in a (c) and b (d). Strain-driven modulation of the local TM was obtained from the model developed in the literature³⁰. Here TM/TMFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${T}_{{\rm{M}}}\,/\,{T}_{{\rm{M}}}^{\;{\rm{FF}}}$$\end{document} larger and smaller than unity refers to the elevation and suppression of the local Morin temperature, respectively, and therefore the magnetic anisotropy, relative to the flat far-field regions.
In situ strain tuning of AFM states and non-thermal generation of topological textures
a, Schematic of the α-Fe2O3 membrane strained in a controlled manner where the underlying flexible Si3N4 support was square in shape. The surrounding membrane lying on top of the rigid silicon frame remained flat. The deflection corresponds to the maximum vertical displacement of the centre of the membrane. Dimensions are not to scale. b, Pressure-dependent calibration of the deflection (left axis) and estimated IP tensile strain (right axis) performed across a range of temperatures. The dashed black curve corresponds to a square-root fit of deflection versus pressure, which is consistent with the trends reported in the literature³⁴. c, Strain-dependent evolution of the AFM STXM contrast obtained at the Fe L3-edge whilst pressurizing the buffered membrane (type C) at room temperature (T < TM). The OOP and IP contrasts are indicated as purple and yellow/orange, respectively, as that in Fig. 2. Scale bars, 1 µm. All the images were recorded at the same position. The energy-contrast scale was slightly varied across the transition to aid visualization. d, Néel vector map performed at 0.39% strain in the same position as that in c. R–G–B colours (key inset in d) and thin white bars represent the IP AFM orientations. The yellow circles and squares indicate AFM merons and antimerons, respectively.
Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes
  • Article
  • Full-text available

February 2024

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196 Reads

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8 Citations

Nature Materials

Antiferromagnets hosting real-space topological textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, they have only been epitaxially fabricated on specific symmetry-matched substrates, thereby preserving their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, restricting the scope of fundamental and applied investigations. Here we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of α-Fe2O3. First, we show—via transmission-based antiferromagnetic vector mapping—that flat nanomembranes host a spin-reorientation transition and rich topological phenomenology. Second, we exploit their extreme flexibility to demonstrate the reconfiguration of antiferromagnetic states across three-dimensional membrane folds resulting from flexure-induced strains. Finally, we combine these developments using a controlled manipulator to realize the strain-driven non-thermal generation of topological textures at room temperature. The integration of such free-standing antiferromagnetic layers with flat/curved nanostructures could enable spin texture designs via magnetoelastic/geometric effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.

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A Low-Latency DNN Accelerator Enabled by DFT-Based Convolution Execution Within Crossbar Arrays

November 2023

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16 Reads

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4 Citations

IEEE Transactions on Neural Networks and Learning Systems

Analog resistive random access memory (RRAM) devices enable parallelized nonvolatile in-memory vector-matrix multiplications for neural networks eliminating the bottlenecks posed by von Neumann architecture. While using RRAMs improves the accelerator performance and enables their deployment at the edge, the high tuning time needed to update the RRAM conductance states adds significant burden and latency to real-time system training. In this article, we develop an in-memory discrete Fourier transform (DFT)-based convolution methodology to reduce system latency and input regeneration. By storing the static DFT/inverse DFT (IDFT) coefficients within the analog arrays, we keep digital computational operations using digital circuits to a minimum. By performing the convolution in reciprocal Fourier space, our approach minimizes connection weight updates, which significantly accelerates both neural network training and interference. Moreover, by minimizing RRAM conductance update frequency, we mitigate the endurance limitations of resistive nonvolatile memories. We show that by leveraging the symmetry and linearity of DFT/IDFTs, we can reduce the power by 1.57 ×\times for convolution over conventional execution. The designed hardware-aware deep neural network (DNN) inference accelerator enhances the peak power efficiency by 28.02 ×\times and area efficiency by 8.7 ×\times over state-of-the-art accelerators. This article paves the way for ultrafast, low-power, compact hardware accelerators.


FIG. 1. (a) Schematic of the measurement method. (b) The corresponding electrode pattern (Al wires) was fabricated on the Si 3 N 4 -Cu-SiO 2 (film-on-substrate) sample. (c) Temperature profiles normalized to the heater power for validation experiments of Cu film. The thermal conductivity, k x ¼ 346 Wm À1 K À1 of a 300 nm thick Cu film are extracted by the fitting curves of normalized temperature rise (DT=P rms ) vs spacing at 10 Hz, consistent with the theoretical prediction range of values: 300-350 Wm À1 K À1 , and the result k ¼ 350 Wm À1 K À1 measured using the four-point method based on WiedemannFranz law. 30 Error bars indicate 95% confidence intervals. The fitting performances are quantified by the root mean square error (RMSE), and the lowest RMSE gives the measured k. (d) Measurement circuit of the dual-domain 3x method.
FIG. 3. (a) Analytical and numerical simulation curves of the spacing-dependent temperature rise (DT) fit well with each other with an error range of 2.5%, which means that the sensing electrodes' interference on the surface temperature profile is negligible, and the assumption in the analytical model is safe. (b) Fitting result in the frequency domain. (c)-(f) Schematic of the fabrication process.
A dual-domain 3 ω method for measuring the in-plane thermal conductivity of high-conductive thin films

June 2023

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274 Reads

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6 Citations

The thermal conductivity measurement of films with submicrometer thicknesses is difficult due to their exceptionally low thermal resistance, which makes it challenging to accurately measure the temperature changes that occur as heat flows through the film. Thus, specialized and sensitive measurement techniques are required. 3ω method is a widely used and reliable tool for measuring the thermal conductivity of films. However, the high in-plane thermal conductivity in thin films results in rapid heat dissipation across the thin film, resulting in poor measurement sensitivity and making it difficult to accurately measure the temperature gradient with the traditional 3ω method. Also, the traditional 3ω method requires cross-plane thermal conductivity to derive the in-plane counterpart. Here, we introduce a dual-domain 3ω method that adopts AC-modulated heating and electrode arrays facilitating surface temperature profiling: (1) the sensitivity was significantly improved due to the employment of low-thermal-conductivity-substrate, and (2) cross-plane thermal conductivity is not required for the analysis of in-plane counterpart. This measurement platform allows us to control heat penetration in depth via varied heating frequencies as well as spatial temperature detection through laterally distributed electrodes on the thin film surface. By utilizing the described method, we have determined the in-plane thermal conductivity of a copper film, having a thickness of 300 nm, which was found to be 346 Wm−1K−1 and validated by the Wiedemann–Franz law.


Multi-Axial Elastic Averaging for Sub-Micron Passive Alignment of Photonic Components

June 2023

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69 Reads

Journal of Lightwave Technology

In recent years, heterogeneous integration (HI) has become a game-changing technology for the construction of complex photonic integrated circuits. Comparing to monolithic integration (MI) technique, chips are stacked or add-on during HI. These components are attached to the substrate using an active or passive alignment scheme. As the passive alignment system does not actively search for the optical axis, it allows more die to be bonded per unit time as compared to active alignment. The main challenge is then to obtain consistent sub-micron alignment accuracy during chip manufacturing process to ensure good device performance. To achieve sub-micron alignment accuracy, slide-stop structures with multi-axial elastic averaging coupling designs are implemented. In this work, optical dies are bonded to silicon interposers with two geometrically different slide-stop designs: triangle and rectangle in designs, respectively. Due to an additional surface contact and smaller internal angle for the former, the triangle slide-stop design improves the translational-axes and rotational-axis post-bond alignment accuracy, from (Reference) −0.27 μm ± 2.54 μm @ 3sigma to (slide-stop) −0.09 μm ± 1.37 μm @ 3sigma, (Reference) 1.00 μm ± 3.19 μm @ 3sigma to (slide-stop) 0.39 μm ± 1.29 μm @ 3sigma, and (Reference) 0.06° ± 0.34° @ 3sigma to (slide-stop) 0.0002° ± 0.15° @ 3sigma respectively. Finally, narrower optical power output distribution of P-down bonded lasers with triangle slide-stop over lasers with rectangle slide-stop is demonstrated.




Citations (45)


... In terms of geographic distribution, the majority of studies originated from North America (45%), followed by Europe (30%), Asia (15%), and other regions (10%), highlighting a concentration of (Table 1 and Figure 2) AI research in developed countries with more advanced healthcare infrastructures and access to large-scale data [21][22][23][24][25][26]. Regarding data sources, 60% of studies used electronic health records (EHRs), leveraging routine clinical data such as lab values and dialysis session logs [27][28][29][30][31]. Another 25% integrated data from wearable or IoT devices, capturing real-time physiological metrics like blood pressure or bioimpedance, reflecting a growing trend toward continuous monitoring [32][33][34][35]. Meanwhile, 15% utilized imaging data, particularly Doppler ultrasound, in vascular access management, underscoring the diversity of data modalities feeding AI systems in this clinical domain [36][37][38]. ...

Reference:

Meta-analysis: The Role of AI and Machine Learning in the Management of Hemodialysis Patient Data
Hybrid Integration of Wearable Devices for Physiological Monitoring
  • Citing Article
  • August 2024

Chemical Reviews

... [1][2][3][4][5][6][7] These membranes often exhibit enhanced flexibility due to their reduced third dimension, allowing them to be bent or wrinkled, which makes possible the formation of 3D structures. [8][9][10][11][12][13][14][15] To date, research on freestanding membranes has focused primarily on oxides, since oxide thin films can be epitaxially deposited onto sacrificial buffer layers, which are DOI: 10.1002/adma.202505707 then removed to release the thin film structures. [16][17][18] Extending this approach to form freestanding membranes from multilayered metal thin films offers exciting opportunities, particularly in spintronics. ...

Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes

Nature Materials

... It has long been believed that there are high-density deep states located slightly above the valence band (EV) in oxide semiconductors, as firstly reported through hard X-ray photoelectron spectroscopy on the order of 10 20 /cm 3 18, 19 . The detected highdensity deep states are attributed to the performance of IGZO transistors, such as negative bias illumination stability (NBIS) [20][21][22][23] , positive bias stability (PBS) 22, 24, 25 , etc., which affect the performance of IGZO transistors, especially in display applications. ...

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress V TH Instability of Low-Thermal Budget IGZO TFT and FeFETs
  • Citing Conference Paper
  • December 2023

... The traditional von Neumann architecture, which relies on logical operations performed by fundamental components like transistors, has served as the backbone of computing for decades. However, with the rapid expansion of AI applications, there has been a notable shift toward neuromorphic chips, such as memristors and memtransistors [8][9][10][11][12]. These devices enable parallel matrix operations and are better suited for the complex computational demands of AI workloads. ...

A Low-Latency DNN Accelerator Enabled by DFT-Based Convolution Execution Within Crossbar Arrays
  • Citing Article
  • November 2023

IEEE Transactions on Neural Networks and Learning Systems

... Similarly, the anneal process in a reducing environment helps to increase the number of oxygen vacancies. 37 In addition to the anneal process, oxygen vacancy concentrations can also be controlled by adjusting the ratio of cations with different metal-oxygen bond dissociation energies, or by doping with metal elements that exhibit varying metal-oxygen bond dissociation energies. [38][39][40] Therefore, ...

Overcoming Negative nFET V TH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement-mode Operation
  • Citing Conference Paper
  • June 2023

... The simplicity of data processing [17], and its power for measurement of various structures (nano to micro-scale) [18] make it attractive for a wide range of samples that have different levels of thermal conductivity. Some examples from the literature of the last two years can be listed as follows: Carbon nanowalls [19], high conductive thin films [20], copper wire [21], single-crystalline bulk [22], thermal interface materials [23], perovskite thin films [24], bacterial nanocellulose [25], oil-based nanofluids [26], magnetic nanofluids [27]. ...

A dual-domain 3 ω method for measuring the in-plane thermal conductivity of high-conductive thin films

... During the ERS operation, voltage drops more on the HZO layer in OS FeFET compared to a poly-Si device which has a low-k interfacial layer, resulting in a more effective ferroelectric switching. Enhancement from mobility of OS channel32) and ferroelectricity material with larger polarization charge33) ...

BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm 2 /V.s
  • Citing Conference Paper
  • March 2023

... Conjugated polymers (CPs) are at the heart of numerous current and emerging technologies spanning optoelectronics, 1-4 energy conversion 5,6 and storage, 7,8 healthcare and biomedicine, [9][10][11][12] sensing, [13][14][15] information science, 16,17 consumer applications, 18,19 and many others. 11,[20][21][22] Doping, a process by which charge carriers are controllably introduced, is crucial to the manifold functionality and high performance exhibited by these materials. ...

Technology Roadmap for Flexible Sensors
  • Citing Article
  • March 2023

ACS Nano

... 5,6 However, AOS faces the charge-trapping issue and shows clockwise (CW) hysteresis in the bipolar sweep. 7,8 Therefore, to reduce the CW hysteresis or even to have counterclockwise (CCW), there are various approaches, such as gate stack engineering by the ferroelectrics, 9,10 defect engineering, [11][12][13] or interface dipole (ID) formation. 14,15 Therefore, this study investigates the formation of interface dipoles (ID) to mimic FeFET-like behavior. ...

High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

IEEE Transactions on Electron Devices

... The 3D sequential stacking for a 1T FeFET memory array can be implemented as shown in Fig.4, where planar or vertical gate-all-around (VC-GAA) FeFETs are stacked layer by layer in a sequential manner. In this design, metal-oxide semiconductor channel is heavily investigated due to its low deposition temperature and flexible deposition methods including sputtering and also atomic-layer deposition [153][154][155] . A major benefit of using metal-oxide semiconductor channel is to avoid the formation of a defective interfacial layer between the semiconductor and the HfO 2 -based ferroelectric layer, which plays a major role in contributing to endurance degradation in Si-based FeFETs 46, 50 . ...

First Demonstration of Ultra-low D it Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
  • Citing Conference Paper
  • December 2022