A Wright's research while affiliated with Fraunhofer Institute for Integrated Systems and Device Technology IISB and other places

Publications (4)

Conference Paper
Full-text available
To simulate the bow of wafers with integrated capacitors in the form of pit arrays, various approaches were pursued. After unfruitful attempts to reliably obtain the wafer bow directly from simulating part of the wafer, a multi-scale approach was used. In this approach, the layer with the integrated capacitors was replaced by a homogeneous material...
Conference Paper
A ball bonding process was simulated over a high-voltage isolation structure. The removal of an inter-dielectric metal crack-stop layer was investigated through 3D simulation. Material properties for the bonded gold ball were obtained using nanoindentation and atomic force microscopy with a methodology from the work of Ma et al. This yielded both e...
Conference Paper
Modelling was undertaken to investigate the role of bond wire size on reliability in power electronic converters. Experiments have shown that thin 125 µm Al wires used in place of 375 µm Al wires alleviate bond wire lift-off and further outlast other sources of failure such as solder degradation in a power module. To investigate the role of bond-wi...
Conference Paper
For an assessment of the stresses occurring during ball bonding of high-voltage CMOS chips in a structure comprising a thin and a thick silicon dioxide layer below the bonding pad, a dynamic model of the process was set up and the materials parameters were calibrated. For a realistic result of the deformation of the bonding ball during the ultrason...

Citations

... Mit SiC-Halbleitern und der Silbersintertechnologie fanden sich zwei Veröffentlichungen [133,167] sowie eine Dissertation mit Dioden [33]. In [133] [171][172][173]. Zudem ist das Drahtbonden in der Leistungselektronik seit vielen Jahren etabliert, wodurch Bondparametersätze erprobt sind [8]. ...
... The stress field under the bonding pad on a microchip can be measured during bonding only with very limited resolution [10][11][12][13] or after bonding with Raman measurements [14]. Therefore, several contributions used finite element modelling to better understand wire bonding [15][16][17][18][19][20][21]. Some contributions focus on how ultrasonic stresses affect the microchip [15][16][17][18][19][20]. ...