Vipul Jain

University of California, Irvine, Irvine, California, United States

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Publications (14)13.71 Total impact

  • Vipul Jain · Payam Heydari
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    ABSTRACT: One of the leading causes of automobile accidents is the slow reaction of the driver while responding to a hazardous situation. State-of-the-art wireless electronics can automate several driving functions, leading to significant reduction in human error and improvement in vehicle safety. With continuous transistor scaling, silicon fabrication technology now has the potential to substantially reduce the cost of automotive radar sensors. This book bridges an existing gap between information available on dependable system/architecture design and circuit design. It provides the background of the field and detailed description of recent research and development of silicon-based radar sensors. System-level requirements and circuit topologies for radar transceivers are described in detail. Holistic approaches towards designing radar sensors are validated with several examples of highly-integrated radar ICs in silicon technologies. Circuit techniques to design millimeter-wave circuits in silicon technologies are discussed in depth. © 2013 Springer Science+Business Media New York. All rights are reserved.
    No preview · Article · May 2013
  • Vipul Jain · Payam Heydari
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    ABSTRACT: Design and implementation of radar transceivers require comprehensive understanding of system-level considerations and relevant spectral restrictions. This chapter presents an overview of the various spectra allocated for automotive radar sensors by regulatory agencies worldwide. Based on the regulatory requirements and using the concepts developed in the previous chapter, important system specifications for short-range radar transceivers are derived. These specifications govern the design of the circuit building blocks as will be clear in the following chapters.
    No preview · Chapter · Jan 2013
  • Vipul Jain · Payam Heydari
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    ABSTRACT: Radars are electronic systems that can detect and track objects. They can provide a highly accurate measurement of the distance, velocity and direction of the detected objects. In principle, every radar system (a) transmits electromagnetic energy to search for objects in a specific volume in space (b) detects the energy reflected from objects in that volume (c) measures the time between the two events, and (d) ultimately provides estimates of range, amplitude and velocity of the objects based on the detected energy and measured time. Several other conventional systems, including infrared and video sensors, have typically been used to perform the above functions, but radars have a significant advantage of being highly immune to environmental and weather conditions [10]. With technological advances leading to inexpensive radars, they are well-poised to replace existing low-functionality systems.
    No preview · Chapter · Jan 2013
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    Leland Gilreath · Vipul Jain · Payam Heydari
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    ABSTRACT: A W-band direct-detection-based receiver front-end for millimeter-wave passive imaging in a 0.18-m BiCMOS process is presented. The proposed system is comprised of a direct-detection front-end architecture employing a balanced LNA with an embedded Dicke switch, power detector, and base-band circuitry. The use of a balanced LNA with an embedded Dicke switch minimizes front-end noise figure, resulting in a great imaging resolution. The receiver chip achieves a measured responsivity of 20–43 MV/W with a front-end 3-dB bandwidth of 26 GHz, while consuming 200 mW. The calculated NETD of the SiGe receiver chip is 0.4 K with a 30 ms integration time. This work demonstrates the possibility of silicon-based system-on-chip solutions as lower cost alternatives to compound semiconductor multi-chip imaging modules.
    Full-text · Conference Paper · Oct 2011
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    ABSTRACT: This paper presents a carrierless RF-correlation-based impulse radio ultra-wideband transceiver (TRX) front-end in a 130-nm CMOS process. Timing synchronization and coherent demodulation are implemented directly in the RF domain, targeting applications such as short-range energy-efficient wireless communication at gigabit/second data rates. The 6-10-GHz band is exploited to achieve higher data rate. Binary phase-shift keying modulated impulse is generated by edge combining the delayed clock signal at a lower frequency of 2 GHz to avoid a more power-hungry phase-locked loop at higher frequency (e.g., 8 GHz). An on-chip pulse shaper inside the pulse generator is designed to provide filtering for an edge-combined signal to comply with the Federal Communications Commission spectrum emission mask. In order to achieve 25-ps delay accuracy and 500-ps delay range for the proposed two-step RF synchronization, a template-based digital delay generation scheme is proposed, which delays the locally generated trigger pulse instead of the wideband pulse itself. Occupying 6.4 mm<sup>2</sup> of chip area, the TRX achieves a maximum data rate of 2 Gb/s and a receiver (RX) sensitivity of -64 dBm with a bit error rate of 10<sup>-5</sup>, while requiring only 51.5 pJ/pulse in the transmitter mode and 72.9 pJ/pulse in the RX mode.
    No preview · Article · May 2011 · IEEE Transactions on Microwave Theory and Techniques
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    ABSTRACT: A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-μm SiGe BiCMOS technology (f<sub>T</sub>/f<sub>MAX</sub> = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. The imager chip consumes 200 mW from a 1.8-V supply.
    Full-text · Conference Paper · Jun 2010
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    ABSTRACT: A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-µm SiGe BiCMOS technology (f T /f MAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. Initial imaging measurements using the chip along with off-chip antennas are also presented. The imager chip consumes 200 mW from a single 1.8-V power supply.
    Full-text · Conference Paper · Apr 2010
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    Le Zheng · Leland Gilreath · Vipul Jain · Payam Heydari
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    ABSTRACT: This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-μm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz<sup>1/2</sup>, and a noise figure of 29 dB. The power dissipation of the detector is 75 μW. Reasonable agreement between simulations and measurements is obtained. To the authors' best knowledge, the detector in this work achieves the highest responsivity reported to date for any solid-state W-band detector.
    Full-text · Conference Paper · Feb 2010
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    Vipul Jain · Fred Tzeng · Lei Zhou · Payam Heydari
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    ABSTRACT: Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22-29-GHz and 77-81-GHz short-range automotive radar bands is designed and implemented in 0.18-¿ m SiGe BiCMOS technology with f<sub>T</sub>/f<sub>max</sub> of 200/180 GHz. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed highly-programmable baseband pulse generator. The transceiver achieves 35/31-dB receive gain, 4.5/8-dB double side-band noise figure, >60/30-dB cross-band isolation, -114/-100.4-dBc/Hz phase noise at 1-MHz offset, and 14.5/10.5-dBm transmit power in the 24/79-GHz bands. Radar functionality is also demonstrated using a loopback measurement. The 3.9 × 1.9-mm<sup>2</sup> 24/79-GHz transceiver chip consumes 0.51/0.615 W.
    Full-text · Article · Jan 2010 · IEEE Journal of Solid-State Circuits
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    Vipul Jain · Babak Javid · Payam Heydari
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    ABSTRACT: Design and implementation of a millimeter-wave dual-band frequency synthesizer, operating in the 24 GHz and 77 GHz bands, are presented. All circuits except the voltage controlled oscillators are shared between the two bands. A multi-functional injection-locked circuit is used after the oscillators to simplify the reconfiguration of the division ratio inside the phase-locked loop. The 1 mm times 0.8 mm synthesizer chip is fabricated in a 0.18 mum silicon-germanium BiCMOS technology, featuring 0.15 mum emitter-width heterojunction bipolar transistors. Measurements of the prototype demonstrate a locking range of 23.8-26.95 GHz/75.67-78.5 GHz in the 24/77 GHz modes, with a low power consumption of 50/75 mW from a 2.5 V supply. The closed-loop phase noise at 1 MHz offset from the carrier is less than -100 dBc/Hz in both bands. The frequency synthesizer is suitable for integration in direct-conversion transceivers for K/W-band automotive radars and heterodyne receivers for 94 GHz imaging applications.
    Full-text · Article · Sep 2009 · IEEE Journal of Solid-State Circuits
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    ABSTRACT: The design of a CMOS 22-29-GHz pulse-radar receiver (RX) front-end for ultra-wideband automotive radar sensors is presented. The chip includes a low-noise amplifier, in-phase/quadrature mixers, a quadrature voltage-controlled oscillator (QVCO), pulse formers, and baseband variable-gain amplifiers. Fabricated in a 0.18-mum CMOS process, the RX front-end chip occupies a die area of 3 mm<sup>2</sup>. On-wafer measurements show a conversion gain of 35-38.1 dB, a noise figure of 5.5-7.4 dB, and an input return loss less than -14.5 dB in the 22-29-GHz automotive radar band. The phase noise of the constituent QVCO is -107 dBc/Hz at 1-MHz offset from a center frequency of 26.5 GHz. The total dc power dissipation of the RX including output buffers is 131 mW.
    No preview · Article · Sep 2009 · IEEE Transactions on Microwave Theory and Techniques
  • Vipul Jain · Fred Tzeng · Lei Zhou · Payam Heydari
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    ABSTRACT: This paper presents a dual-band millimeter- wave (mmWave) transceiver (TRX) in a 0.18 mum BiCMOS technology (fT/fmax=200/180GHz). The dual-band TRX operates in the 22-to-29GHz and 77- to-81GHz short-range automotive radar bands.
    No preview · Conference Paper · Feb 2009
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    ABSTRACT: The design of a CMOS 22-29 GHz pulse-radar receiver (RX) front-end for ultra-wideband (UWB) automotive radar sensors is presented. Fabricated in a 0.18 mum CMOS process, the 3 mm<sup>2</sup> RX chip achieves a conversion gain of 35-38.1 dB, noise figure of 5.5-7.4 dB and input return loss less than -14.5 dB in the 22-29 GHz band. The phase noise of the constituent QVCO is -107 dBc/Hz at 1 MHz offset from a center frequency of 26.5 GHz. The total dc power dissipation of the RX including LO/output buffers is 131 mW.
    No preview · Conference Paper · Oct 2007
  • Jeffrey Johnson · Vipul Jain · Payarn Heydari
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    ABSTRACT: In the presence of high-power environmental noise, such as that present in the common substrate and on the power and ground (P/G) rails of a system-on-a-chip (SOC), the current-to-phase relationship for an LC oscillator cannot be assumed linear. This paper presents a simple nonlinear modification to the well-established linear time-variant (LTV) model for phase noise that facilitates a more accurate prediction of oscillator phase noise and jitter in the presence of high-power noise. For low-power noise, this nonlinear model simplifies to the LTV metric. The accuracy of the proposed analytical model is verified through the simulation of a 10 GHz Colpitts oscillator in a 0.18mum CMOS process.
    No preview · Conference Paper · Jun 2007

Publication Stats

277 Citations
13.71 Total Impact Points

Institutions

  • 2007-2010
    • University of California, Irvine
      • Department of Electrical Engineering and Computer Science
      Irvine, California, United States