James J. Whalen

State University of New York, New York, New York, United States

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Publications (16)11.91 Total impact

  • Xiaoyu Cheng · J.J. Whalen · Yong-Kyu Yoon
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    ABSTRACT: In this work, an quasi-omnidirectionally radiating, compact, folded patch antenna in a rectangular waveguide shape is demonstrated, where the folded ground plane of the patch antenna creates an EMI protected enclosed space and it can be used for electronic circuit implementation with little EMI from the patch antenna. An analysis on the EMI of a rectangular structure in a high speed digital system is available [6]. The demonstrated antenna can be used for a variety of commercial, military and bio-medical applications such as a compact GPS and a wireless endoscope for gastro-intestine monitoring etc..
    No preview · Conference Paper · Aug 2010
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    ABSTRACT: Non-Bragg resonance in a SIW has been successfully demonstrated using theory, simulation, and experiment. Both simulation and measurement results show good agreement with the theoretical calculation with an offset in insertion loss, which is attributed in part to improper matching in transition from the microstrip feeding with a quasi TEM mode to the SIW structure with a TE mode. This kind of SIW with periodic walls can be applied in an integrated system requiring band rejection response.
    No preview · Conference Paper · Aug 2010
  • Xiaoyu Cheng · D.E. Senior · J.J. Whalen · Yong-Kyu Yoon
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    ABSTRACT: Since its physical implementation in 1999 by Pendry et al. [1], metamaterials which demonstrate negative permittivity and permeability have been raised as an interesting research topic in the microwave society for their unique features. Split ring resonator (SRR) is one of the most popular structures which could introduce negative permeability. Usually, a SRR is composed of two homocentric metallic rings, where each of them has a slot on the ring. The SRR works as an L-C resonance network whose resonance frequency can be determined by [2].
    No preview · Conference Paper · Aug 2010
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    ABSTRACT: Geometric resonance phenomenon in a corrugated waveguide is investigated both theoretically and experimentally. By solving wave equation under the periodic boundary condi- tion in a corrugated waveguide, geometric resonance conditions are derived. This resonance is associated with the waveguide thickness and the phase shift between the corrugated walls of the waveguide. A corrugated waveguide is fabricated and measured by an HP 8510c Vector Network Analyzer, measurement results agree with the theoretical prediction. This work is meaningful for microwave communications, quantum physics, photonic crystals, integrated optical and electronic devices. The theory is also of significance to the research on periodic quantum well.
    Preview · Article · Jan 2010 · PIERS Online
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    ABSTRACT: Throughout the decades of continuous advances in semiconductor technology, from the discrete devices of the late 1950s to today's billon-transistor system-on-chip, there have always been concerns about the ability of components to operate safely in an increasingly disruptive electromagnetic environment. This paper provides a nonexhaustive review of the research work conducted in the field of electromagnetic compatibility (EMC) at the IC level over the past 40 years. It also brings together a collection of information and trends in IC technology, in order to build a tentative roadmap for the EMC of ICs until the year 2020, with a focus on measurement methods and modeling approaches.
    Full-text · Article · Mar 2009 · IEEE Transactions on Electromagnetic Compatibility
  • V.A. Pogrebnyak · J.J. Whalen
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    ABSTRACT: This experimental investigation reveals a new mechanism for controlling microwave transmission in periodically corrugated waveguide. The measurements show that location of the stopband in the frequency spectrum as well as its width depends on the relative position of two corrugated walls. The stopband and hence transmission vary from zero to a maximum value upon shifting of one periodic wall with respect to another on the half period of the corrugation. The results confirm the theoretical prediction of such spectrum transformation. The experiment demonstrates that the structure can be used to control power transmission in different microwave, photonic and electronic devices
    No preview · Article · Feb 2007 · Electronics Letters
  • James J. Whalen · Elisee Rastefano · Robert T. Kemerley
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    ABSTRACT: X-band microsecond pulse, ms pulse, and CW-burnout data have been measured for two commercially available 1-micron gate GaAs MESFET's. Values of incident pulse power required to cause burnout indicate a threshold level for pulse durations 0.2 microsecond or longer and for CW. The incident power threshold level for burnout is in the range 3 to 6 W for the MESFET type with a Ti/Pt/Au gate metallization and in the range 1.5 to 3 W for the MESFET type with an Al gate metallization. Many MESFET's were observed to fail during a single pulse.
    No preview · Article · Dec 1982 · IEEE Transactions on Microwave Theory and Techniques
  • J.J. Whalen · R.T. Kemerley
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    ABSTRACT: X-Band microsecond pulse, millisecond pulse, and CW burnout data have been measured for GaAs MESFETs. Values of incident pulse power required to cause burn-out are presented and discussed.
    No preview · Article · Jul 1982 · IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium
  • Ta-Fang Fang · James J. Whalen · Gordon K C Chen
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    ABSTRACT: Applications of the Nonlinear Circuit Analysis Program (NCAP) to calculate RFI effects in electronic circuits containing discrete semiconductor devices have been reported upon previously. The objective of this paper is to demonstrate that the computer program NCAP also can be used to calculate RFI effects in linear bipolar integrated circuits (IC's). The IC's reported upon are the ¿A741 operational amplifier (op amp) which is one of the most widely used IC's, and a differential pair which is a basic building block in many linear IC's. The ¿A741 op amp was used as the active component ent in a unity-gain buffer amplifier. The differential pair was used in a broad-band cascode amplifier circuit. The computer program NCAP was used to predict how amplitude-modulated RF signals are demodulated in the IC's to cause undesired low-frequency responses. The predicted and measured results for radio frequencies in the 0.050-60-MHz range are in good agreement. Contained in the paper is a complete set of NCAP parameter values for all the transistors in the ¿A741 op amp. These parameter values may be used as typical data for similar transistors in other bipolar integrated circuits.
    No preview · Article · Dec 1980 · IEEE Transactions on Electromagnetic Compatibility
  • James J. Whalen · Mark C. Calcatera · Mark L. Thorn
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    ABSTRACT: Microwave nanosecond pulse burnout data have been measured at 9.3 GHz for three commercially available 1-mu m gate MESFET's. Values for the incident pulse power required to cause burnout are concentrated in the ranges 4-10 W for 10-ns pulses, 12-25 W for 3-ns pulses, and 15-30 W for 1.5-ns pulses. The corresponding values for the absorbed microwave pulse energy required to cause burnout are concentrated in the ranges 0.3 to 0.6 ergs for 10-ns pulses, 0.2-0.4 ergs for 3-ns pulses, and 0.2-0.35 ergs for 1.5-ns pulses. Two dominant failure modes in overstresed MESFET's have been observed. One is a gate-to-source low-resistance path (5-25 Omega) which frequently is correlated with metal migration (mainly gold) from the source metallization to the gate metallization. This failure mode was dominant when MESFET's failed at lower power Ievels as at 10 ns. The other dominant failure mode is a reduction in I<sub>DSS</sub> or a drain-to-source short which is correlated with massive damage in the channel region between the source and gate metallizations. This failure mode was dominant when MESFET's failed at high power levels as at 1.5 ns.
    No preview · Article · Jan 1980 · IEEE Transactions on Microwave Theory and Techniques
  • James J. Whalen · Mark Thorn · Mark C. Calcatera
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    ABSTRACT: Microwave nsec pulse burnout data have been measured at 9 GHz for three 1 micron gate MESFETs. Values of incident pulse power and absorbed energy required to cause burnout are presented and discussed. Also discussed are the dominant failure modes for the overstressed MESFETs.
    No preview · Article · Jan 1979
  • JAMES J. WHALEN · CARMEN PALUDI
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    ABSTRACT: Models for the fundamental passive electrical components (R, C, L) which include the dominant parasitic elements are shown. Typical values for the parasitic elements are given. A procedure for using computer-aided design (CAD) simulation programmes such as SPICE 1 to estimate the effects of parasitic elements on electronic circuit performance in the HF/VHF region is described. As an example to demonstrate the usefulness of this procedure a linear model was presented for an audio frequency junction field effect transistor (AF JFET) amplifier suitable for RFI analysis at high frequencies. The CAD simulation and the experimental results for the amplifier voltage transfer ratio in the 0.1 to 100 MHz frequency range were observed to be in good agreement when typical parasitic element values were used. By adjusting the initial (typical) parasitic element values, the agreement between calculated and experimental results can be improved.
    No preview · Article · Nov 1977 · International Journal of Electronics
  • James J. Whalen
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    ABSTRACT: The electromagnetic susceptibility of 2N918 UHF transistors is investigated. A single RF pulse at 240 MHz was applied directly to the base terminal with the emitter terminal grounded. The incident RF pulse power required to cause a 50-percent failure rate is in the 28-38-W range for a 3-¿s pulse duration and in the 130-140-W range for a 0.3-¿s pulse duration. The data indicate that all three 2N918 versions tested are very similar to one 2N5179 version reported upon previously [1] . We observed that the RF microsecond pulse data fit a relationship EA = KAT 0.5 whete EA is the absorbed pulse energy required to cause transistor failure, T the pulse duration, K a constant, A an emitter area. For both 2N918 and 2N5 179 UHF transistors, the value for EA is 22 ,¿J at T = 1 ¿s and the value for K is 3.1 kJ/cm2-s0.5 for A = 7.0 × 10-6 cm2. A comparison of RF microsecond pulse and dc microsecond pulse susceptibility data for the 2N918 transistor inadicated that the susceptibility levels are within 4 dB and that dc microsecond pulse susceptibility data may be quite useful as a lower bound for RF microsecond pulse susceptibility data.
    No preview · Article · Jun 1977 · IEEE Transactions on Electromagnetic Compatibility
  • James J. Whalen · Philip T. Glinksi
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    ABSTRACT: A graphical design procedure is presented based upon a QP triangle for the design of bipolar transistor (BJT) bias circuits. The design technique stresses quiescent point (QP) location on the IC-VCE characteristics and considers the effects of simultaneous variations in the BJT parameters hFE, VBE, and ICO upon QP location. The QP triangle method is developed for the standard one-battery BJT CE stage discussed in many introductory electronic circuits textbooks. The QP triangle method is applied to a specific CE stage which has to meet certain design specifications. One important specification is that the circuit must operate over the temperature range 25-100°C with silicon N-P-N BJT's having values of h<FE (25°C) > 40 and hFE 100°C) < 200. The available tradeoffs between the peak-to-peak voltage Vpp and the current gain AI are stressed and the best available design is selected. The performance of the selected design was simulated on a digital computer and measured in the laboratory. Both the computer simulation and the experiment are in good agreement with the design. The QP triangle method has been used in an introductory electronic circuits course with success for several years. Students understand this graphical design procedure and are able to apply it. It is recommended for beginning electronics students. An interactive computer program AMPDSN to aid students and instructors design the standard one-battery BJT CE stage is also described. An algorithm based upon the QP triangle is used. The program language is Basic.
    No preview · Article · Jun 1976 · IEEE Transactions on Education
  • James J. Whalen
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    ABSTRACT: The electromagnetic susceptibility of UHF transistors is investigated. The 2N5179 RF amplifier type transistor was selected as a representative UHF transistor because of its chip structure. It is a silicon n-p-n epitaxial planar transistor with an interdigitated baseemitter metallization pattern. Several manufacturer's versions were tested. A single RF pulse at 240 MHz was applied directly to the base terminal with the emitter terminal grounded. The incident RF pulse power required to cause a 50 percent failure rate is in the 35-70 W range for a 3 ¿s pulse duration and in the 150-450 W range for a 0.3 , ¿s pulse duration. The primary variable is the percentage of the incident power absorbed by the transistor. The absorbed pulse energy required to cause a 50 percent failure rate is in the 20-35 ¿Joule range for 0.3-3.0, ¿s pulse durations. The gs pulse and CW RF burnout powers for 2N5179 transistors are similar to those for 1N23 mixer diodes. The data suggest that UHF receivers with an RF transistor amplifier front end may be as susceptible to intense EMR at UHF frequencies as are UHF receivers with a mixer diode front end.
    No preview · Article · Dec 1975 · IEEE Transactions on Electromagnetic Compatibility
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    Victor A Pogrebnyak · James J Whalen
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    ABSTRACT: The investigation reveals a new mechanism for controlling wave transmission in the periodic waveguide. Measurements show that location of the gap in the spectrum and its width depend on the relative position of two corrugated walls. The transmission varies from zero to a maximum value upon shifting of one periodic wall with respect to another on the half period of corrugation. The location of the gap moves from 7.7 to 10 GHz. The experimental and theoretical results demonstrate that the periodic structure with the variable periodic profile can be used to control wave transmission in different optical and microwave devices.
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