[Show abstract][Hide abstract] ABSTRACT: The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physics-based model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small- and large-signal microwave characteristics, and the physical insight gained, can be used in the process-orientated optimization and process sensitivity analysis of LDMOS power FETs. The charge-based model is well-suited to non-linear CAD implementation for applications such as power amplifier design.
[Show abstract][Hide abstract] ABSTRACT: A new quasi-2-D model for laterally diffused metal-oxide-semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased p<sup>+</sup>-n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section in a “current-driven” form, and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast process-oriented nonlinear physical model is scalable over a wide range of device widths and accurately models direct-current and microwave characteristics.
Full-text · Article · Sep 2011 · IEEE Transactions on Electron Devices
[Show abstract][Hide abstract] ABSTRACT: A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S21, and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC IDS- VDS characteristic and less than 5 ms to produce S-parameters at a single frequency. Index Terms — Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.
[Show abstract][Hide abstract] ABSTRACT: form only given, as follows. A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.
No preview · Article · Jan 2011 · IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium