[Show abstract][Hide abstract] ABSTRACT: The conventional continuous scan and Delay- ID , lin methods of negative bias temperature instability characterization are not applicable for polycrystalline silicon thin-film transistors due to significant recovery effect and mobility degradation, respectively. An improved on-the-fly (OTF) method is proposed to simultaneously extract the threshold voltage shift and mobility degradation. In addition, the improved OTF method is more accurate than the continuous scan due to less recovery effect. The exponents of reaction-diffusion mechanism can be clearly determined using the new method.
No preview · Article · Dec 2010 · IEEE Transactions on Electron Devices
[Show abstract][Hide abstract] ABSTRACT: This paper proposes a design of IT memory cells that utilizes the modulation of drain current by channel traps and offers these advantages: 1. capacitorless structure, 2. long data retention time, 3. excellent endurance characteristics, 4. low power consumption, 5. 3D integration compatibility.
[Show abstract][Hide abstract] ABSTRACT: The divergence of subthreshold region due to backlight illumination was improved by channel doping method. Channel doping using phosphorous dopant can effectively suppress the photo-leakage current in subthreshold region, which is induced by high build-in potential between source and channel region. The divergence was reduced without complex process steps.
[Show abstract][Hide abstract] ABSTRACT: We proposed comprehensive hot carrier characterization for poly-Si TFTs with various widths. Small and large width devices exhibit different electric behavior and degradation under hot carrier stress. For large width devices, self-heating was observed. Contour Plot of VGS and VDS stress voltage response for on-current degradation was also provided in this paper.
[Show abstract][Hide abstract] ABSTRACT: In this study, we had investigated the influence of TFT layout design on electrical characteristic. It was found that square TFT will induce higher turn-on current than rectangular one, owing to self-heating effect. In addition, the reliability of a-Si:H TFTs were also influenced by TFT layout design.
[Show abstract][Hide abstract] ABSTRACT: The negative and positive bias temperature instabilities are investigated on p-channel and n-channel TFTs with four different combinations. The stress-induced hump in the subthreshold region is observed for PBTI on p-channel TFTs and NBTI on n-channel TFTs. The hump is attributed to the edge transistors along the channel width direction. Higher electric field at the corners induces more trapped carriers in the insulator as compared to channel transistor. In contrast, no humps are observed for NBTI on p-channel TFTs and PBTI on n-channel TFTs. For NBTI on p-channel TFTs, the interface traps are generated by breaking the Si-H bonds and are responsible for the negative Â¿V<sub>T</sub>. On the other hand, electrons are trapped in the insulator and induce positive Â¿V<sub>T</sub> for PBTI on n-channel TFTs.
[Show abstract][Hide abstract] ABSTRACT: We had investigated the instability of a-Si:H TFTs which channel width ranges from 30 μm to 6000 μm. It was found that applied high voltage on the drain electrode induced serious V T shift in large channel width TFTs. This phenomenon is ascribed to self-heating induced V T shift effect.
[Show abstract][Hide abstract] ABSTRACT: We proposed a new multi-gate poly-Si TFTs design for LTP S panel, which exhibits better essential characteristics on on-current, mobility, (photo) leakage current and trap-state density. Reliability was also improved in this structure.
[Show abstract][Hide abstract] ABSTRACT: We report a UV-visible photonic sensor with Si-nanocrystals sensitizer on TFT-LCD panel. As the photonic sensor was operated by bias, enhanced photo-response with largely opto-electronic conversion demonstrated transistor-like operation mechanism. Photonic sensor using Si-nanocrystals as sensitizer sandwiched between two electrodes structure is proposed to integrate with UV-to-Visible, ambient-light-sensing on TFT-LCD.