Huanhuan Zou

Hangzhou Dianzi University, Hang-hsien, Zhejiang Sheng, China

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Publications (2)2.24 Total impact

  • Huang Wang · Lingling Sun · Jun Liu · Huanhuan Zou · Zhiping Yu · Jianjun Gao
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    ABSTRACT: Recent models for on-chip spiral inductors have been extensively examined and compared by transfer function analysis. Through the calculation of the transfer functions for the models, including T-, 1-π, and 2-π models, the pros and cons of equivalent circuit topology of each model are evaluated. It is found that the number of poles provided by a certain topology is a constant, while complex poles are responsible for the broadband fitting capacity of the model. The 2-π model has the most poles and the best broadband fitting capacity, while 1-π and T-models are better solutions considering both accuracy and efficiency. A novel broadband model combining the advantages of the physics-based circuit model and behavioral macro-model is proposed for accurately characterizing RF behaviors of spiral inductors. A number of inductors with various geometries have been fabricated to verify the model. Excellent agreements are obtained between the measured data and calculation from the proposed model up to 40 GHz. This modeling method is also applicable to other passive components such as transmission lines and transformers.
    No preview · Article · Aug 2011 · IEEE Transactions on Microwave Theory and Techniques
  • Huanhuan Zou · Jun Liu · Jincai Wen · Huang Wang · Lingling Sun · Zhiping Yu
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    ABSTRACT: A novel wideband 1-π equivalent circuit model for on-chip spiral inductors is presented. A substrate network, consisting of R/L/C, is proposed to model the broadband loss mechanisms in the silicon substrate. The skin and distributed effects for windings have been taken into account. A series of inductors with different geometries are fabricated in standard 0.18-μm 1P6M RF CMOS process to verify the model. Excellent agreements have been obtained between the modeled and measured data up to 40 GHz, which verify that the proposed 1-π model naturally has better wideband prediction capability than published 1-π or T-models, and simpler topology than 2-π models for on-chip spiral inductors.
    No preview · Conference Paper · Oct 2010