[Show abstract][Hide abstract] ABSTRACT: This paper discusses the fundamental challenges and reports the recent progress in enabling embedded Si:C (eSi:C) nMOS source/drain stressor technology. A thick oxide (SiON, Toxgl ~ 26Aå) long channel (Lgate in the range of 80nm-110nm, gate-pitch =336nm) nMOS device was used as the main test structure to evaluate the impact of eSi:C stressor to the device electrical characteristics, such as channel mobility and drive current. It was demonstrated that modifying the conventional Si CMOS fabrication process to accommodate the intrinsically meta-stable eSi:C material property is crucial in keeping carbon in its substitutional site thus to preserve strain in the eSi:C stressor throughout the device fabrication process. Significant channel mobility and drive current enhancement was demonstrated in the thick-oxide long-channel nMOS devices using in situ phosphorus-doped (ISPD) epitaxial eSi:C source/drain material.
[Show abstract][Hide abstract] ABSTRACT: This paper presents for the first time (110) PMOS characteristics without R<sub>ext</sub> degradation, allowing investigation of fundamental mobility and demonstration of drive current I<sub>on</sub> in excess of 1mA/mum at I<sub>off</sub> =100 nA/mum.
[Show abstract][Hide abstract] ABSTRACT: This work demonstrates that the ~2times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190 nm liners poly-pitch for devices under compressive stress. (110) PMOS with 3.5 GPa compressively stressed liners demonstrate strong channel drives with I<sub>on</sub>=800 muA/mum at I<sub>off</sub>=100 nA/mum (V<sub>dd</sub>=10 V) for 190 nm poly-pitch, the highest reported to date for 45-nm-node (110) PMOS using conventional gate dielectrics without eSiGe stressors. Additionally, (110) PMOS show better scalability, with 15% smaller total I<sub>on</sub> degradation than (100) PMOS when poly-pitch scales from 250 nm to 190 nm.