[Show abstract][Hide abstract] ABSTRACT: In this paper,we demonstrate the integration of optimized LTDs with 0.13μm CMOS technology. Excellent characteristics were achieved for both the photodiodes and the CMOS transistors. 10Gb/s operation was demonstrated at a supply voltage of only 1.5V.
[Show abstract][Hide abstract] ABSTRACT: We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9dBm (bit error ratio <10/sup -9/) at 10 Gb/s was achieved.
No preview · Article · Jun 2003 · IEEE Photonics Technology Letters
[Show abstract][Hide abstract] ABSTRACT: We discuss the prospects for receiver arrays based on advanced Si CMOS and SiGe HBT technology and will review the recent demonstrations of high speed (5-11 Gb/s) silicon-based optical receivers.
No preview · Article · Jan 2002 · Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
[Show abstract][Hide abstract] ABSTRACT: We report a 3.3 V silicon optical receiver consisting of a CMOS-compatible lateral trench PIN photodiode and a transimpedance amplifier that achieved a sensitivity of -17. 1 dBm at 2.5 Gb/s and demonstrated error-free (BER<10/sup -10/) operation up to 6.5 Gb/s at 845 nm. This is the highest reported sensitivity at data rates above 2.0 Gb/s and the fastest operation of any Si-based optical receiver.
[Show abstract][Hide abstract] ABSTRACT: Many applications for optical interconnection either require more data rate than serial links offer or are architected for parallel line (data bus) implementations. Essential to low-cost optical bus implementations are monolithic arrays of photo-receivers with high yield and uniform properties. We present a 32-channel optical receiver array fabricated in 1.2-μm GaAs E/D MESFET technology. Each channel runs at the data rate of 1 Gbit/s, equivalently providing 32 Gbit/s with 32 channels.