[Show abstract][Hide abstract] ABSTRACT: The fabrication process of InGaAsP/InP buried heterostructure laser diode modules emitting at 1300 nm is described. Results on testing these modules in a real fiber optic communication are presented as well. It was demonstrated that heterostructure laser diodes produced by a combination of chemical and melt-etching and liquid phase epitaxy have high performance characteristics. These laser diodes were used to fabricate fiber optic pigtailed modules. The operation of these modules in a real fiber optic communication system was compared with the operation of standard emitters and considerable increasing of system parameters. At the module mean operating current of 25 mA and transmission rate of 41.2 Mbit/s for a 25 km transmission line the bit error rate (BER) of 10<sup>-11</sup> was measured
[Show abstract][Hide abstract] ABSTRACT: In this paper the investigation of internal optical second harmonic generation (SH) of buried heterostructure (BH) InGaAs/AlGaAs strained quantum well laser diodes is performed for additional characterization of these devices which are capable of operating at high power densities as high as 3 MW/cm2 at room temperature and 0.1 MW/cm2 at 190 degree(s)C. The blue-green emission level is of the order of 105 photons per second for laser diodes with 3micrometers active layer width at fundamental optical power of 2.0 mW. This relatively high SH intensity level makes it possible to observe the light spot in optical microscopes and to detect SH signal with a standard photon counting system in wide operation current and ambient temperature intervals. Variation of the SH signal at the constant fundamental harmonic (FH) power indicates that changes in the near field occur. SH far-field patterns of laser diodes reflect the effects of SH radiation spot size reduction in comparison with FH radiation spot size and FH waves nonlinear interactions in the waveguide material.