K. Groves

Wright-Patterson Air Force Base, Dayton, Ohio, United States

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Publications (8)

  • [Show abstract] [Hide abstract] ABSTRACT: Experts share their views on the goals and recent achievements of the HEALICs program. The program has been initiated with the aim to enhance wireless systems with sensors, actuators, and mixed-signal control loops to improve their performance yield. HEALICs design teams also need to address the possibility that process variability adversely impacts the self-healing circuitry, with specific emphasis on compensation for this effect. HEALICs technology combines analog and digital techniques for low-power overhead and embedded comprehensive healing for SoCs that compensates for the extreme environments and long operational lifetimes experienced by the Department of Defense (DoD) electronic systems along with compensating for process variation. It is expected that the technology developed under the HEALICs program will significantly enhance long-term reliability in addition to improving performance yield.
    Article · Dec 2012 · IEEE Design and Test of Computers
  • A. Mattamana · K. Groves · P. Orlando · [...] · C. Keast
    [Show abstract] [Hide abstract] ABSTRACT: This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter, and an IF amplifier. The X-band receiver front end module yielded a gain of 13.5-15 dB, 5.2-5.8 dB noise figure (NF), across the frequency band (3.7-4.3 GHz).
    Conference Paper · Oct 2012
  • P. Orlando · K. Groves · A. Mattamana · [...] · C. Keast
    [Show abstract] [Hide abstract] ABSTRACT: This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20-21.5 dB conversion gain, 5.6-6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
    Conference Paper · Sep 2012
  • [Show abstract] [Hide abstract] ABSTRACT: This paper describes the demonstration of a four-channel digital beamforming system incorporating highly integrated silicon germanium downconverter modules. The downconverter modules are designed to translate X-band frequencies (9 to 10.5 GHz) down to a common 1.0 GHz IF output. The modules were integrated with an X-band antenna array and high-speed digitizer system to form a rudimentary digital beamforming subsystem. Data was collected in a compact antenna range and compared to simulated antenna patterns. Basic calibration and beamforming methods were applied to showcase the ability to include new, highly integrated components into digital beamforming subsystem demonstrations.
    Article · Oct 2010
  • Brian K. Kormanyos · Tony K. Quach · P. Len Orlando · [...] · Kari S. Groves
    [Show abstract] [Hide abstract] ABSTRACT: A method of realizing a highly selective filter response with good linearity is presented. The method is suitable for integrated on chip applications in processes with lossy substrates and inductors with low quality factor (Q). The method is suitable for use well into the millimeter wave region with a high probability of first pass success.
    Conference Paper · Jun 2010
  • [Show abstract] [Hide abstract] ABSTRACT: Integration of active and passive microwave circuit components onto an inexpensive silicon substrate can be accomplished using photosensitive SU-8 epoxy as the interposer layer. This paper addresses the 3-dimensional integration of AlGaN/GaN high electron mobility transistor's (HEMT's) embedded into deep reactive ion etched (DRIE) pockets on a silicon substrate with gold-plated vias and transmission lines formed in a follow-on layer of SU-8 epoxy over the HEMT's. In addition, modeling, simulation, fabrication and testing of gold-plated, solenoid inductors embedded in SU-8 over the silicon substrate is covered. This integration process may replace variable inductance wire bond connections; with reproducible interconnects to enhance circuit design flexibility and accuracy. The solenoid inductors, whose inductance L and quality factor Q can be further optimized through the addition of ferrite or ferromagnetic cores, will help reduce the overall circuit footprint. This paper is organized into two parts: the solenoid model development and the HEMT integration process and test results.
    Article · Jan 2010 · ECS Transactions
  • K. Groves · G. Subramanyam · T. Quach · [...] · A. Matamana
    [Show abstract] [Hide abstract] ABSTRACT: Current advancements in military and wireless applications create the need for increased functionality with reduced cost and size. In this paper a highly integrated tunable electronics are necessary to meet these new requirements. Barium strontium titanium oxide (BST) is a viable technology for these applications. BST technology offers significant benefits with its high tuning range, high power capabilities and low control voltages. While there is great interest in the development of BST technology, little research has been published regarding integrated matching networks using BST thin film parallel plate capacitors for an X-band low noise amplifier (LNA).
    Conference Paper · Aug 2008
  • [Show abstract] [Hide abstract] ABSTRACT: This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.
    Conference Paper · Feb 2008