Yu-Jen Chien

National Tsing Hua University, Hsin-chu-hsien, Taiwan, Taiwan

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Publications (1)13.59 Total impact

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    ABSTRACT: Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.
    Preview · Article · Oct 2008 · Nano Letters

Publication Stats

19 Citations
13.59 Total Impact Points

Top Journals


  • 2008
    • National Tsing Hua University
      • Department of Materials Science and Engineering
      Hsin-chu-hsien, Taiwan, Taiwan