Publications (2)0 Total impact
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ABSTRACT: Numerical simulations to compute stress distributions resulting from stressed overlayers reveal that significant stress fields can penetrate deep into device. Piezoelectric polarization effects from stressed overlayers are only mild due to relatively high stiffness in nitrides but can change band profile along the channel, especially under gate edges. Fringing fields in passivation layers with large dielectric constants can play important role in collapse reduction.
Conference Paper: Three-dimensional TCAD Process and Device Simulations[Show abstract] [Hide abstract]
ABSTRACT: Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. ) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.