[Show abstract][Hide abstract] ABSTRACT: A low-power 100 Gbit/s selector IC using InP DHBTs, which provides excellent high-frequency characteristics at a low bias condition, is reported. A novel design technique, which assists high-speed operation under a low supply voltage condition, is used. The selector IC achieves 100 Gbit/s operation with a power consumption as low as 345 mW.
No preview · Article · Nov 2008 · Electronics Letters
[Show abstract][Hide abstract] ABSTRACT: A novel UWB short-range radar (SRR) which effectively mitigates its impacts on radio services using the restricted band such as radio astronomy or Earth Exploring Satellite Service is introduced. The essential components, a burst oscillator generating no carrier leak, and antennas with notch-filtering function are presented in detail. Other key MMICs, such as a high-speed square-law detector, variable gain LNA, a sample-hold circuit, etc. are also described with the performances of the SRR
[Show abstract][Hide abstract] ABSTRACT: A novel UWB SRR complying with the FCC new spectrum mask, and its key components, a carrier-leak-free BO, an antenna with notch filtering function, has been described. Furthermore, an incoherent receiving system which consists of SLD, variable gain LNA, SH has been presented, enabling simple and low-cost SRR. We make further efforts for developing simpler SRR with one-chip Tx- and one-chip Rx-modules.
[Show abstract][Hide abstract] ABSTRACT: The design and performance of an MMIC burst oscillator that oscillates only while the driving pulse is applied are described. Since it does not generate carrier leak, a UWB radar using this oscillator may effectively mitigate interference with services using the restricted frequency band by locating its spectrum sufficiently far from the band.
No preview · Article · May 2005 · Electronics Letters
[Show abstract][Hide abstract] ABSTRACT: A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
No preview · Article · Mar 2004 · Electronics Letters