[Show abstract][Hide abstract] ABSTRACT: We fabricated 2:1 multiplexer IC (MUX) with a retiming function by using 1-μm self-aligned InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs). As a result of the high performance DHBTs and the circuit design, in which we implemented broadband impedance matching, the MUX operated at 120 Gbit/s with a power dissipation of 1.27 W and an output amplitude of 520 mV when measured on the wafer. The MUX was assembled in a module using V-connectors for practical use. In this module, the MUX operated at 113 Gbit/s with an output amplitude of 514 mW and a power dissipation of 1.4 W.
[Show abstract][Hide abstract] ABSTRACT: A low-power 100 Gbit/s selector IC using InP DHBTs, which provides excellent high-frequency characteristics at a low bias condition, is reported. A novel design technique, which assists high-speed operation under a low supply voltage condition, is used. The selector IC achieves 100 Gbit/s operation with a power consumption as low as 345 mW.
No preview · Article · Nov 2008 · Electronics Letters
[Show abstract][Hide abstract] ABSTRACT: A novel UWB short-range radar (SRR) which effectively mitigates its impacts on radio services using the restricted band such as radio astronomy or Earth Exploring Satellite Service is introduced. The essential components, a burst oscillator generating no carrier leak, and antennas with notch-filtering function are presented in detail. Other key MMICs, such as a high-speed square-law detector, variable gain LNA, a sample-hold circuit, etc. are also described with the performances of the SRR
[Show abstract][Hide abstract] ABSTRACT: A novel UWB SRR complying with the FCC new spectrum mask, and its key components, a carrier-leak-free BO, an antenna with notch filtering function, has been described. Furthermore, an incoherent receiving system which consists of SLD, variable gain LNA, SH has been presented, enabling simple and low-cost SRR. We make further efforts for developing simpler SRR with one-chip Tx- and one-chip Rx-modules.
[Show abstract][Hide abstract] ABSTRACT: A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
No preview · Article · Mar 2004 · Electronics Letters