Nonfluorinated Volatile Copper(I) 1,3-Diketiminates as Precursors for Cu Metal Deposition via Atomic Layer Deposition

ArticleinInorganic Chemistry 45(21):8480-2 · November 2006with5 Reads
Impact Factor: 4.76 · DOI: 10.1021/ic061016e · Source: PubMed
Abstract

Novel nonfluorinated Cu(diketiminate)L complexes with L = neutral olefinic ligand have been prepared as stable, volatile Cu(I) precursors for the deposition of copper films by an atomic layer deposition (ALD) process. Among them, the complexes of 4-a and 5-a are the most volatile and stable at low temperature (55 degrees C). A clean, conformal copper film was deposited at 120 degrees C in an ALD process. These Cu(I) complexes are the first examples of nonfluorinated copper(I) diketiminates that can be readily applied to an industrial microelectronic fabrication process.

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