Multiple Biomarker Panels for Cardiovascular Risk Assessment
New England Journal of Medicine (Impact Factor: 55.87). 06/2008; 358(20):2172-4. DOI: 10.1056/NEJMe0801721
Conference Paper: Phase Characteristics of I-Band Pulsed Gate GaAs FET Power Amplifiers[Show abstract] [Hide abstract]
ABSTRACT: The measured phase sensitivities and transients of FET power amplifiers having pulsed gate voltages are very low and are suitable for phased array applications. Gate pulsing requires that the FETs have good rf performance and a drain-to-gate breakdown voltage large enough to support the sum of the gate voltage, drain voltage, and maximum rf voltage swing.
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