11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Article (PDF Available)inOptics Express 18(25):25633-41 · December 2010with20 Reads
DOI: 10.1364/OE.18.025633 · Source: PubMed
We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
Fig. 1
Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, Mircea D. Guina, "11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18,
25633-25641 (2010);
Image ©2010 Optical Society of America and may be used for noncommercial purposes only. Report a copyright concern regarding this image.
    • "This peculiar behavior, specific to III–V–N compounds, leads to the possibility of tailoring both the electronic band gap and the band alignments [20], whereas in conventional III–V compounds, the reduction of the band-gap energy is generally obtained by inserting an element that causes an increase in the lattice constant. By virtue of the design flexibility offered by dilute nitrides, several applications have been demonstrated, such as solar cells [21], semiconductor optical amplifiers (SOA) [22], and light sources, e.g., vertical-cavity surface-emitting lasers (VCSELs) [23], ridge lasers [24], and disk lasers [25], [26]. In particular, GaInNAs compounds have received growing interest in the last decade due to their potentiality for active device applications at the operating wavelength ¼ 1:3 m. "
    [Show abstract] [Hide abstract] ABSTRACT: GaInNAs has been introduced to design an active switch operating at wavelength $lambda = 1.2855 muhbox{m}$ having high selectivity. The device is made of a mono-dimensional periodic photonic band-gap structure constituted by alternating ridge waveguide layers with different ridge heights. The periodic waveguiding structure has been designed to show the band gap in correspondence of the wavelength range where the dilute nitride active material experiences maximum gain. As an example, the performances of the switch under electrical control are crosstalk $hbox{CT} = -14.1 hbox{dB}$, gain in the on-state ${rm G} = 7.6 hbox{dB}$, and bandwidth $Deltalambda_{-10,{rm dB}} = 1.5 hbox{nm}$. By increasing the input power above the optical threshold value of the gain saturation, the switching performance worsens in terms of crosstalk and gain, but the wavelength selectivity improves, since the bandwidth decreases down to $Deltalambda_{-10,{rm dB}} = 0.8 hbox{nm}$ for the input optical power ${rm P}_{i} = 20 hbox{mW}$.
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    • "The nonlinear conversion experiments were performed in free-running mode, that is, without any wavelength control. Compared to the cavity used for fundamental wavelength, the output coupler has been replaced by a mirror that was highly reflective for both IR and visible, whereas the folding mirror reflects infrared but transmits Figure 10: Output characteristic (a) and typical spectrum for an output power of 5 W (b). The temperature of the cooling water was set to 1 @BULLET C and the transmission of output coupler was 1.5% [20]. visible light. "
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