11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, Mircea D. Guina, "11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18,
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