11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Article (PDF Available)inOptics Express 18(25):25633-41 · December 2010with20 Reads
DOI: 10.1364/OE.18.025633 · Source: PubMed
Abstract
We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
Fig. 1
Citation
Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, Mircea D. Guina, "11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18,
25633-25641 (2010);
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-25-25633
Image ©2010 Optical Society of America and may be used for noncommercial purposes only. Report a copyright concern regarding this image.
    • "This peculiar behavior, specific to III–V–N compounds, leads to the possibility of tailoring both the electronic band gap and the band alignments [20], whereas in conventional III–V compounds, the reduction of the band-gap energy is generally obtained by inserting an element that causes an increase in the lattice constant. By virtue of the design flexibility offered by dilute nitrides, several applications have been demonstrated, such as solar cells [21], semiconductor optical amplifiers (SOA) [22], and light sources, e.g., vertical-cavity surface-emitting lasers (VCSELs) [23], ridge lasers [24], and disk lasers [25], [26]. In particular, GaInNAs compounds have received growing interest in the last decade due to their potentiality for active device applications at the operating wavelength ¼ 1:3 m. "
    [Show abstract] [Hide abstract] ABSTRACT: GaInNAs has been introduced to design an active switch operating at wavelength $lambda = 1.2855 muhbox{m}$ having high selectivity. The device is made of a mono-dimensional periodic photonic band-gap structure constituted by alternating ridge waveguide layers with different ridge heights. The periodic waveguiding structure has been designed to show the band gap in correspondence of the wavelength range where the dilute nitride active material experiences maximum gain. As an example, the performances of the switch under electrical control are crosstalk $hbox{CT} = -14.1 hbox{dB}$, gain in the on-state ${rm G} = 7.6 hbox{dB}$, and bandwidth $Deltalambda_{-10,{rm dB}} = 1.5 hbox{nm}$. By increasing the input power above the optical threshold value of the gain saturation, the switching performance worsens in terms of crosstalk and gain, but the wavelength selectivity improves, since the bandwidth decreases down to $Deltalambda_{-10,{rm dB}} = 0.8 hbox{nm}$ for the input optical power ${rm P}_{i} = 20 hbox{mW}$.
    Full-text · Article · Oct 2012
    • "The nonlinear conversion experiments were performed in free-running mode, that is, without any wavelength control. Compared to the cavity used for fundamental wavelength, the output coupler has been replaced by a mirror that was highly reflective for both IR and visible, whereas the folding mirror reflects infrared but transmits Figure 10: Output characteristic (a) and typical spectrum for an output power of 5 W (b). The temperature of the cooling water was set to 1 @BULLET C and the transmission of output coupler was 1.5% [20]. visible light. "
    [Show abstract] [Hide abstract] ABSTRACT: We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb-based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180–1200 nm and subsequent intracavity frequency doubling to generate yellow-orange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2–3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.
    Full-text · Article · Jan 2012
    • "In the first approach [19], the VECSEL structure that demonstrated 20 W at −20 @BULLET C at 950 nm was first grown in a reverse order on a GaAs substrate, then, after soldering it to a diamond heat spreader, the GaAs substrate was selectively etched. In the second approach [20, 21] that has been adopted in the current work, effective heat dissipation is obtained by introducing an optically transparent intracavity diamond that is directly bonded to the gain that was bonded to the InP window layer of the gain mirror by molecular bonding as described in [22]. We performed thermal modelling of the wafer-fused gain mirror with diamond heat spreader mounted on a watercooled copper block by solving the thermal equation using a finite element method for a generated heat power of 3.3 W in the active region [18]. "
    [Show abstract] [Hide abstract] ABSTRACT: 1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These VECSELs emit a high-quality beam with beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size. Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.
    Full-text · Article · Oct 2011
Show more