We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
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". In the first approach , the VECSEL structure that demonstrated 20 W at −20 • C at 950 nm was first grown in a reverse order on a GaAs substrate, then, after soldering it to a diamond heat spreader, the GaAs substrate was selectively etched. In the second approach   that has been adopted in the current work, effective heat dissipation is obtained by introducing an optically transparent intracavity diamond that is directly bonded to the gain "
[Show abstract][Hide abstract] ABSTRACT: 1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused
InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These
devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups
of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the
1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture
size show CW output of 4.8 W. These VECSELs emit a high-quality beam with beam parameter
below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value
of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size. Based
on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and
Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.
Full-text · Article · Oct 2011 · Advances in Optical Technologies
[Show abstract][Hide abstract] ABSTRACT: We report on a compact efficient high-repetition-rate (>100 kHz) optically pumped AlGaInAs nanosecond eye-safe laser at 1525 nm. A diamond heat spreader bonded to the gain chip is employed to improve the heat removal. At a pump power of 13.3 W, the average output power at a repetition rate 200 kHz is up to 3.12 W, corresponding to a peak output power of 560 W. At a repetition rate 500 kHz, the maximum average power and peak power are found to be 2.32 W and 170 W, respectively.
No preview · Article · Aug 2012 · Applied Physics B
[Show abstract][Hide abstract] ABSTRACT: 1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/ GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups of quantum wells show CW output power of 2.7 W from 180mum apertures in both 1300-nm and 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These devices emit a high quality beam with MÂ² beam parameter below 1.6 allowing reaching a coupling efficiency into a single mode fiber as high as 70 %. Maximum value of output power of 6.6 W was reached for 1300nm wavelength devices with 290mum aperture size.
Full-text · Article · Feb 2011 · Proceedings of SPIE - The International Society for Optical Engineering