Strain mapping in nanowires

ArticleinNanotechnology 16(10):2365-71 · October 2005with3 Reads
Impact Factor: 3.82 · DOI: 10.1088/0957-4484/16/10/062 · Source: PubMed

    Abstract

    A method for obtaining detailed two-dimensional strain maps in nanowires and related
    nanoscale structures has been developed. The approach relies on a combination of lattice
    imaging by high-resolution transmission electron microscopy and geometric phase analysis
    of the resulting micrographs using Fourier transform routines. We demonstrate the method
    for a germanium nanowire grown epitaxially on Si(111) by obtaining the strain components
    εxx,
    εyy,
    εxy, the mean dilatation, and the rotation of the lattice planes. The resulting strain maps are
    demonstrated to allow detailed evaluation of the strains and loading on nanowires.