Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK Electronics Letters
(Impact Factor: 0.93).
08/2010; 46(14). DOI: 10.1049/el.2010.1282
The ability of thin conductive polythiophene layers to dissipate electrons in electron-beam lithography (EBL) process on bulk zinc oxide (ZnO) samples is shown. High energy electron-beam exposure of relatively thick (650 nm-thick) hydrogen silsesquioxane (HSQ) negative-type resist deposited on ZnO was investigated for three different cases. In turn, no charge dissipation layer, 40 nm-thick Al and 100 nm-thick conductive polymer layers were used on the top of HSQ resist. A quick and inexpensive processing method with the use of polymer is shown for an EBL exposure of dense and high-resolution patterns in HSQ/ZnO samples
Available from: Qunqing Li
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ABSTRACT: Charging of insulating substrates is a common problem during Electron Beam lithography (EBL), which deflects the beam and distorts the pattern. A homogeneous, electrically conductive, and transparent graphene layer is used as a discharge layer for EBL processes on insulating substrates. The EBL resolution is improved compared with the metal discharge layer. Dense arrays of holes with diameters of 50 nm and gratings with line/space of 50/30 nm are obtained on quartz substrate. The pattern placement errors and proximity effect are suppressed over a large area and high quality complex nanostructures are fabricated using graphene as a conductive layer.
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ABSTRACT: Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.
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