Coherent control of Rydberg states in silicon

London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, UK.
Nature (Impact Factor: 41.46). 06/2010; 465(7301):1057-61. DOI: 10.1038/nature09112
Source: PubMed


Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose-Einstein condensation to the quantum control of single atoms. Of particular interest, because they can be used in the quantum control of one atom by another, are excited Rydberg states, where wavefunctions are expanded from their ground-state extents of less than 0.1 nm to several nanometres and even beyond; this allows atoms far enough apart to be non-interacting in their ground states to strongly interact in their excited states. For eventual application of such states, a solid-state implementation is very desirable. Here we demonstrate the coherent control of impurity wavefunctions in the most ubiquitous donor in a semiconductor, namely phosphorus-doped silicon. In our experiments, we use a free-electron laser to stimulate and observe photon echoes, the orbital analogue of the Hahn spin echo, and Rabi oscillations familiar from magnetic resonance spectroscopy. As well as extending atomic physicists' explorations of quantum phenomena to the solid state, our work adds coherent terahertz radiation, as a particularly precise regulator of orbitals in solids, to the list of controls, such as pressure and chemical composition, already familiar to materials scientists.

Download full-text


Available from: Stephen Anthony Lynch
  • Source
    • "A few experimental techniques are available to probe the silicon phononiton system (low temperature, T ∼ 1 K, and low phonon numbers are assumed). First, freeelectron lasers have been used to probe the 1s − 2p transitions in silicon [38]. Observation of the vacuum Rabi splitting by measurement of the absorption spectrum of the allowed optically probed transition 1s(T 2 ) → 2p 0 (∼ 30 meV) using weak optical excitation of the single micro-pillar cavity, arrays, or delta-doped 1D structures would provide confirmation of phononiton physics. "
    [Show abstract] [Hide abstract]
    ABSTRACT: A quantum mechanical superposition of a long-lived, localized phonon and a matter excitation is described. We identify a realization in strained silicon: a low-lying donor transition (P or Li) driven solely by acoustic phonons at wavelengths where high-Q phonon cavities can be built. This phonon-matter resonance is shown to enter the strongly coupled regime where the "vacuum" Rabi frequency exceeds the spontaneous phonon emission into non-cavity modes, phonon leakage from the cavity, and phonon anharmonicity and scattering. We introduce a micropillar distributed Bragg reflector Si/Ge cavity, where Q=10^5-10^6 and mode volumes V<=25*lambda^3 are reachable. These results indicate that single or many-body devices based on these systems are experimentally realizable.
    Full-text · Article · Jun 2011
    • "The experiments described were performed using the FELIX free electron laser at the FOM institute at Nieuwegein in the Netherlands. A full description of the experiment can be found in our recently published paper [8]. The main cogent points, however, are summarized in this conference abstract. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We demonstrate THz photon echoes from silicon doped with phosphorus donors. We provide experimental evidence showing that the echo emerges at the predicted angle and that it arrives at our detector at the predicted time. We use this to demonstrate coherent control of the silicon donor states.
    No preview · Conference Paper · Oct 2010
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: The origins of line broadening in the far-infrared spectrum of phosphorus donors in SiGe are investigated. Using a combination of Fourier transform infrared FT-IR spectroscopy and time-resolved pump-probe measurements, we show that the line shapes are dominated by inhomogenous broadening. Experimental FT-IR absorbance spectra measured in the temperature range 6–150 K are presented for three different Ge contents. Additional spectra of pure phosphorus doped silicon recorded under similar experimental conditions are presented and compared with the SiGe results. We propose a simple quantitative model to simulate the line broadening in our experimental spectra. Our model takes into account the compositional variations in the random SiGe binary alloy and its effect on the permittivity of the environment around each donor. We also show that the addition of small amounts Ge to Si single crystals has little detrimental effect on the lifetime of the excited infrared electronic energy levels, despite the observed line broadening.
    Full-text · Article · Dec 2010 · Physical Review B
Show more