Conference Paper

Linear cellular antenna switch for highly-integrated SOI front-end

RFMD Scotts Valley, Scotts Valley
DOI: 10.1109/SOI.2007.4357884 Conference: SOI Conference, 2007 IEEE International
Source: IEEE Xplore

ABSTRACT

A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz. A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz.

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    • "All data are given at 2 GHz unless stated otherwise. The best data found in the literature for GaAs pHEMT (0.5 μm) [31] and CMOS (0.18 μm SOI) switches [30] is shown with dash-dotted lines. The solid line is a fit to the best reported measurements of ferroelectric varactors (BST) at 1 MHz. "
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    ABSTRACT: A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor ( Q ) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.
    Full-text · Article · Oct 2009 · IEEE Transactions on Electron Devices
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    • "Several authors have investigated RF switches fabricated on silicon wafers using nMOS as the switch device [4] [5] [6]. Recent technology and design improvements have been closing the gap between silicon switch implementations and GaAs or SOS approaches. "
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    ABSTRACT: This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
    Full-text · Conference Paper · Feb 2009
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    ABSTRACT: In this thesis, the results of intensive electrical characterization, modeling and the design of hardware with thin film tunable capacitors, i.e., dielectric varactors, has been presented and discussed. Especially the quality factor Q and the tuning ratio of the tunable capacitors have been studied, since these are crucial parameters for reconfigurable RF front-end applications for mobile phones.
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