Dependences of the Electrical Properties on the Diameter and the Doping Concentration of the Si Nanowire Field Effect Transistors with a Schottky Metal-Semiconductor Contact

Nano Quantum Electronic Laboratory, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
Journal of Nanoscience and Nanotechnology (Impact Factor: 1.56). 05/2010; 10(5):3609-13. DOI: 10.1166/jnn.2010.2273
Source: PubMed


A compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire. The threshold voltage, the mobility, and the doping density of the Si nanowire and the Schottky barrier height at a metal-Si nanowire heterointerface in the nanowire FET were estimated by using the theoretical model.

Download full-text


Available from: Yun Seop Yu
  • [Show abstract] [Hide abstract]
    ABSTRACT: Label-free, sensitive, and real-time c-reactive protein (CRP) sensor was fabricated using p-type silicon nanowire (SiNW) based structures configured as field effect transistors (FET) using the conventional 'top-down' semiconductor processes. The width of SiNWs were distributed 80 nm to 400 nm. Among them to improve signal-to-noise ratio and sensitivity of SiNW FET, 221 nm-SiNW was chosen for biosensing of CRP. Antibody of c-reactive protein (anti-CRP) was immobilized on the SiNW surface through polydimethylsiloxane (PDMS) microfluidic channel for detection of CRP. Specific binding of CRP with anti-CRP on the SiNW surface caused a conductance change of SiNW FET and various injections from 10 and 1 microg/ml to 100 ng/ml solutions of CRP resulted in the conductance changes from 39 and 25 to 16%, respectively. Label-free, in-situ and very sensitive electrical detection of CRP was demonstrated with the prepared SiNW FET.
    No preview · Article · Feb 2011 · Journal of Nanoscience and Nanotechnology
  • [Show abstract] [Hide abstract]
    ABSTRACT: The electrical properties of 10-nm-radius n-type gate all around (GAA) twin Si nanowire field effect transistors (TSNWFETs) and field effect transistors (FETs) without nanowires were investigated to understand their device characteristics. The electrical characteristics of the GAA TSNWFETs and FETs with bulk boron concentrations of 1 x 10(18) and 1 x 10(16) cm(-3) were simulated by using three-dimensional technology computer-aided design simulation tools of sentaurus taking into account quantum effects. The simulation results showed that the on-current level of the TSNWFETs was larger than that of FETs, and the subthreshold swing and the drain induced barrier lowing of the TSNWFETs were smaller than those of FETs. The current density and conduction band edge profiles in the TSNWFETs clarified the dominant current paths. The simulation results showed that the on-current/off-current ratio increased with increasing bulk boron concentration, and the stand-by current level decreased.
    No preview · Article · Jul 2012 · Journal of Nanoscience and Nanotechnology
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: A compact model for depletion-mode p-type cylindrical surrounding-gate nanowire field-effect transistors (SGNWFETs) is proposed. The SGNWFET model consists of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic SGNWFET. Based on the electrostatic method, the intrinsic SGNWFET model was derived from current conduction mechanisms attributed to bulk charges through the center neutral region, in addition to accumulation charges through the surface accumulation region. The authors' previously developed Schottky diode model was used for the M-S contacts. The new model was applied to an advanced design system (ADS), whereby the intrinsic part of the SGNWFET and the Schottky diode were developed using the Verilog-A language. The results of the simulation of the newly developed SGNWFET model reproduced the experiment results considerably well.
    Full-text · Article · Jul 2012 · Journal of Nanoscience and Nanotechnology
Show more