Back-End-Of-Line Poly-Sige Disk Resonators

Conference PaperinProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) · February 2006with10 Reads
DOI: 10.1109/MEMSYS.2006.1627779 · Source: IEEE Xplore
Conference: Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on


    This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.