Conference Paper

Silicon Raman amplifiers, lasers, and their applications

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
DOI: 10.1109/GROUP4.2005.1516397 Conference: Group IV Photonics, 2005. 2nd IEEE International Conference on
Source: IEEE Xplore


This paper presents recent breakthroughs and applications of Raman based silicon photonics such as silicon Raman amplifiers and lasers. These lasers would extend the wavelength range of III-V laser to mid-IR where important applications such as laser medicine, biochemical sensing, and free space optical communication await the emergence of a practical and low cost laser.

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    • "In addition, this approach causes the electrical power to dissipate on the Raman crystal, a problem that does not exist in the conventional Raman lasers. However, as will be experimentally shown in this paper, the TPA vanishes in the MWIR regime, hence eliminating the main problem with silicon Raman lasers [16]. This combined with: 1) the unsurpassed quality of commercial silicon crystals; 2) the low cost and wide availability of the material; 3) extremely high optical damage threshold of 1–4 GW/cm 2 (depending on the crystal resistivity ); and 4) excellent thermal conductivity, renders silicon a very attractive Raman crystal. "
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    ABSTRACT: This paper presents the case for the silicon Raman laser as a potential source for the technologically important midwave infrared (MWIR) region of the optical spectrum. The mid-IR application space is summarized, and the current practice based on the optical parametric oscillators and solid state Raman lasers is discussed. Relevant properties of silicon are compared with popular Raman crystals, and linear and nonlinear transmission measurements of silicon in the mid-IR are presented. It is shown that the absence of the nonlinear losses, which severely limit the performance of the recently demonstrated silicon lasers in the near IR, combined with unsurpassed crystal quality, high thermal conductivity and excellent optical damage threshold render silicon a very attractive Raman medium, even when compared to the very best Raman crystals. In addition, silicon photonic technology, offering integrated low-loss waveguides and microcavities, offers additional advantages over today's bulk crystal Raman laser technology. Using photonic crystal structures or microring resonators, the integrated cascaded microcavities can be employed to realize higher order Stokes emission, and hence to extend the wavelength coverage of the existing pump lasers. Exploiting these facts, the proposed technology can extend the utility of silicon photonics beyond data communication and into equally important applications in biochemical sensing and laser medicine
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    ABSTRACT: In this thesis, several new concepts for Raman amplifiers and lasers both in optical fibers and silicon waveguides have been developed, modeled and optimized that have the potential of increasing the performance of fiber-optic communication systems. Designs for Raman fiber lasers with improved efficiency, tunability, and output noise are analyzed. On the other hand, fundamental properties and limitations of silicon-based Raman amplifiers and lasers are investigated. Based on a newly developed comprehensive mathematical model of nonlinearly coupled wave propagation in silicon waveguides, new designs with increased efficiency are proposed. In dieser Arbeit werden neue Konzepte für Raman-Verstärker und -Laser sowohl in Glasfasern als auch in Silizium-Wellenleitern entwickelt, modelliert und optimiert, die die Leistungsfähigkeit optischer Nachrichtenübertragungssysteme erhöhen sollen. Zum einen werden Entwürfe für Raman-Faserlaser entwickelt, die deren Effizienz, Abstimmbarkeit und Rauschverhalten verbessern. Zum anderen werden grundlegende Eigenschaften und Leistungsgrenzen siliziumbasierter Raman-Verstärker und -Laser untersucht. Auf Basis eines neu entwickelten Modells für die nichtlinear gekoppelte Wellenausbreitung in Silizium-Wellenleitern werden neuartige Entwürfe mit verbesserter Effizienz vorgestellt.
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    ABSTRACT: We examine limitations of carrier removal with a p-n junction in Raman devices, namely, ineffectiveness at high optical intensities due to the applied field being screened, electrical heat dissipation and the possibility of thermal instability.
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