Conference Paper

On the prediction of near-field microcontroller emission

INSA, Toulouse, France
DOI: 10.1109/ISEMC.2005.1513613 Conference: Electromagnetic Compatibility, 2005. EMC 2005. 2005 International Symposium on, Volume: 3
Source: IEEE Xplore


This paper details a predictive approach for the evaluation of the magnetic field radiated by microcontrollers. The simulation is based on the radiation of elementary current dipoles corresponding to the current flowing in supply inductances. A CMOS test chip including six microcontroller cores has been scanned for validation purpose. Preliminary comparison show interesting similarities between measured and simulated scan, which build a valuable link between electrical macro-models and near-field electromagnetic formulations.

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Available from: Etienne Sicard
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    • "The state-of-art model developed in [7] predicts the radiated near-field magnetic emissions of components of relatively larger size (1-2 cm 2 in area). Electrical macro-models linked to near-field scanning, based on the ICEM formulation have been reported for the near magnetic field prediction, nevertheless, require additional simulation tools to build the complete model [8], [9]. A model based on the use of electric and magnetic dipoles has been reported in [10], [11]. "
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    ABSTRACT: A radiated emission model, scaled, optimized, and compatible to modelling “on-chip” microwave devices is presented in this paper. The model has been inspired from a previously existing model at IRSEEM, which predicts only the radiated magnetic field. The proposed model predicts the radiated electromagnetic (EM) emissions of components of very small form factor. An optimization procedure has been implemented in order to extract the model parameters, taking into account their physical sense. The model is applied to an “on-chip” microstrip patch antenna, designed and simulated in Ansoft HFSS. The antenna is built on a High Resistivity Silicon substrate and resonates at 20 GHz. Promising and encouraging results have been obtained for the modelled radiated EM fields. Our model is proven suitable to apply on System-in-package and System-on-Chip devices integrating wireless system within itself.
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    • ". Comparison between measured and simulated drain voltage of the aggressor in time domain Figure 7. Comparison between measured and simulated drain voltage of the aggressor in frequency domain As radiated field is linked with the currents flowing through pins of the package, radiated emission is computed by analytical formulas from current I deduced from the electrical model [11]. Figure 8 shows the comparison between the measured obtained in a near field scan test bench and the simulated tangential magnetic field radiated by the aggressor [12] [13]. "
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    ABSTRACT: This paper details two approaches for the evaluation of the near field radiated coupling between two nearby integrated circuits and their electromagnetic compatibility. The first method is based on an empirical comparison between the radiated emission level of the aggressor and the radiated susceptibility level of the victim. The second approach is a predictive method which mixes electrical and 3D electromagnetic simulations. While the first method offers a practical and easy mean to forecast a noise margin, the second method allows a more precise evaluation of disturbance risks based on a worst case mutual positioning of both circuits.
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    ABSTRACT: A semi-automatic measurement system and diagnostic tool for localization of radiating parts of electronic devices in near-field was developed. A near-field scanning of electromagnetic emission is performed by the system. Maximal spatial resolution of the scanning is 0.2 mm which is sufficient for exact localization of radiating parts in the most cases. Frequency range of the measurement is from 30 MHz to 3 GHz. The advantage of the system is simplicity of implementation, as it is based entirely on commercially produced devices. The test receiver Rohde & Schwarz ESPI7 was used for the measurement of radiation level. The advantageous functions of the receiver such as fast frequency scan and simultaneous measurement with three detectors was utilized. The scanning procedure is controlled by a program which leads a user throughout all measurement steps. The program was made in Agilent VEE Pro. Important part of the measurement is processing of the measured data. Therefore, software for effective data visualization and analysis was developed. The key functions of the program are projection of the measured data on a photograph of the tested device, peak search and highlighting of critical places. Results of the scanning of a main board of a personal computer are presented.
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