Dynamic behavior optimization of the junctions with SIPOS layer termination

Conference Paper · November 2004with5 Reads
DOI: 10.1109/SMICND.2004.1403019 · Source: IEEE Xplore
Conference: Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International, Volume: 2


    In the power devices domain, one of the key problem is the edge termination improving. This work proposes an optimisation of the structures with field electrode and SIPOS layer (semi-insulating polycrystalline silicon) in order to accomplish a maximum of the breakdown voltage with a smallest area consumed. For these kinds of structures physical models and some simulations regarding the dynamic behaviour are presented.