Conference Paper

A 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
DOI: 10.1109/APASIC.2004.1349478 Conference: Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
Source: IEEE Xplore


To the authors' knowledge, the first 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier (TIA) is presented here. It has been realized in a 0.35 μm SiGe process and its area is 0.45mm2 with pads. Employing inductive series and shunt peaking techniques, the proposed TIA can achieve a transimpedance gain of 61.6dBΩ and the bandwidth of 7.4GHz, while dissipating only 18mW with 1.2V supply. With an equivalent photodiode capacitance of 0.15pF, this TIA shows the input referred noise current density of 22pA/√Hz.

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