Conference Paper

On the current saturation in low dimensional MOSFETs

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Abstract

Submicron MOSFETs are the issue for ULSI integrated circuits. Several current models are proposed to explain the drain current behavior in the saturation region of the ID-VD characteristic curve. Mainly, we can distinguish two types: the classical and low dimension current modeling. In the present work a survey of Current voltage models is presented aiming a contribution to interpret the non-saturation phenomenon, which are severe in low dimensional devices.

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... The current variation in this region is attributed to the effects of the high fields applied between gate and substrate as well as drain and source and the channel modulation, which induce the hot carrier generation, thus the increasing of drain current. In this case the channel is completely formed and pinched closely to the drain; the position of the pinch-off point is modulated by the drain voltage [14][15][16]. In Fig. 9d, it is worth noting that we found an optimal value for the drain current between the low and high injection zones (V d = 3.8 V). ...
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Principles of Semiconductor Devices
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