Effect of annealing and alloying to the microstructural property of gold bond wire in wire bond interconnect
Dept. of Phys., Malaya Univ., Kuala Lumpur, MalaysiaDOI: 10.1109/SMELEC.2002.1217870 Conference: Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Source: IEEE Xplore
This paper investigates the microstructural and mechanical properties of gold and copper that influence bondability performance and junction reliability of wire bond interconnect. The bond wire microstructural and mechanical properties can be controlled by the annealing process to establish the effect of recovery, grain growth and the recrystallization. The addition of 1% palladium to gold wire has improved recrystallization temperature from 350°C to 550°C.
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