Novel BiCMOS compatible, short channel LDMOS technology for medium voltage RF & power applications

Conference Paper · July 2002with3 Reads
DOI: 10.1109/MWSYM.2002.1011552 · Source: IEEE Xplore
Conference: Microwave Symposium Digest, 2002 IEEE MTT-S International, Volume: 1


    We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12 V supply voltage the 0.4 mm gate width device gives 100 mW output power P<sub>1</sub> <sub>dB</sub> at a drain efficiency of 43%. It has a transducer power gain of more than 20 dB and a current gain cutoff frequency, f<sub>T</sub>, of 13 GHz. The maximum available gain cutoff frequency, f<sub>MAX</sub>, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.