Novel BiCMOS compatible, short channel LDMOS technology for medium voltage RF & power applications
We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12 V supply voltage the 0.4 mm gate width device gives 100 mW output power P<sub>1</sub> <sub>dB</sub> at a drain efficiency of 43%. It has a transducer power gain of more than 20 dB and a current gain cutoff frequency, f<sub>T</sub>, of 13 GHz. The maximum available gain cutoff frequency, f<sub>MAX</sub>, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.