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Experimental and theoretical advances in Cu2ZnSn(S,Se)4 solar cells

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Journal of Physics D: Applied Physics
Authors:
Karina G Rodriguez-Osorio at University of Guadalajara
Karina G Rodriguez-Osorio
Jacob Andrade Arvizu at Institut de Recerca en Energia de Catalunya
Jacob Andrade Arvizu
Isaac Montoya De Los Santos at Universidad del Istmo
Isaac Montoya De Los Santos
  • Universidad del Istmo
Juan Pablo Morán-Lázaro at University of Guadalajara
Juan Pablo Morán-Lázaro
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Abstract and Figures

Cu2ZnSn(SSe)4 (CZTSSe) semiconductor is quite promising to solar cell applications, recently achieving a new record efficiency of 14.9%. Despite theoretical works have shown that efficiencies higher than 20% are possible in this technology, there are some critical points that should be carefully solved by the scientific community. In this review, it is presented a critical analysis on the state-of-the-art of Cu2ZnSn(SSe)4 solar cells. First, we summarize advantages and disadvantages of most used vacuum and non-vacuum thin film fabrication methods, followed by the most important results in solar cell fabrication along with key factors in performance improvement. Furthermore, the future experimental outlook is also analyzed with a particular focus on kesterite material engineering and its grading band-gap engineering. Likewise, the experimental state-of-the-art of CZTSSe device fabrication, a non-typical contribution of this work to the literature it is the presentation and discussion of most important theoretical results on solar cells. A particular attention is paid to results concerning numerical and analytical approaches for the study of Cu2ZnSn(SSe)4 solar cells. Finally, theoretical results concerning the potential use of nanostructured CZTSSe solar cells for achieving efficiencies higher than that of the Shockley–Queisser limit are presented and discussed.
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Journal of Physics D: Applied Physics
J. Phys. D: Appl. Phys. 58 (2025) 133001 (40pp) https://doi.org/10.1088/1361-6463/adab7f
Topical Review
Experimental and theoretical advances
in Cu2ZnSn(S,Se)4solar cells
K G Rodriguez-Osorio1, J A Andrade-Arvizu2, I Montoya De Los Santos3,
J P Morán-Lázaro1, M Ojeda-Martinez1, F J Sánchez-Rodríguez4,
L A Sánchez-Hernández1, L M Pérez5, D Laroze6, P Chandrasekar7, S Routray8
and Maykel Courel1,∗
1Centro Universitario de los Valles (CUValles), Universidad de Guadalajara, Carretera
Guadalajara—Ameca Km. 45.5, Ameca, Jalisco, C.P. 46600, Mexico
2Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Barcelona,
Spain
3Instituto de Estudios de la Energía, Universidad del Istmo, Santo Domingo Tehuantepec, Oaxaca, C.P.
70760, Mexico
4Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, C.P. 80010 Culiacán,
Sinaloa, Mexico
5Departamento de Ingeniería Industrial y de Sistemas, Universidad de Tarapacá, Casilla 7 D, Arica
1000000, Chile
6Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7 D, Arica, 1000000, Chile
7Department of Computer Science and Engineering, Faculty of Engineering and Technology, Parul
University, Vadodara, Gujarat 391760, India
8Department of Electronics and Communication Engineering, SRM Institute of Science and Technology,
Kattankulathur, Chennai 603203, India
E-mail: maykel.courel@academicos.udg.mx
Received 23 September 2024, revised 24 December 2024
Accepted for publication 17 January 2025
Published 30 January 2025
Abstract
Cu2ZnSn(SSe)4(CZTSSe) semiconductor is quite promising to solar cell applications, recently
achieving a new record efciency of 14.9%. Despite theoretical works have shown that
efciencies higher than 20% are possible in this technology, there are some critical points that
should be carefully solved by the scientic community. In this review, it is presented a critical
analysis on the state-of-the-art of Cu2ZnSn(SSe)4solar cells. First, we summarize advantages
and disadvantages of most used vacuum and non-vacuum thin lm fabrication methods,
followed by the most important results in solar cell fabrication along with key factors in
performance improvement. Furthermore, the future experimental outlook is also analyzed with a
particular focus on kesterite material engineering and its grading band-gap engineering.
Likewise, the experimental state-of-the-art of CZTSSe device fabrication, a non-typical
contribution of this work to the literature it is the presentation and discussion of most important
theoretical results on solar cells. A particular attention is paid to results concerning numerical
and analytical approaches for the study of Cu2ZnSn(SSe)4solar cells. Finally, theoretical results
concerning the potential use of nanostructured CZTSSe solar cells for achieving efciencies
higher than that of the Shockley–Queisser limit are presented and discussed.
∗Author to whom any correspondence should be addressed.
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