Layered transition metal dichalcogenide semiconductors are interesting for photovoltaics owing to their high solar absorbance and efficient carrier diffusion. Tungsten diselenide (WSe
), in particular, has emerged as a promising solar cell absorber. However, defective metal-semiconductor interfaces have restricted the power conversion efficiency (PCE) to approximately 6%. Here we report
... [Show full abstract] WSe photovoltaics with a record-high PCE of approximately 11% enabled by ultra-clean indium/gold (In/Au) van der Waals (vdW) contacts. Using grid-patterned top vdW electrodes, we demonstrate near-ideal diodes with a record-high on/off ratio of . Open-circuit voltage (VOC) of 571 +/- 9 mV, record-high short-circuit current density (JSC) of 27.19 +/- 0.45 mA cm -- approaching the theoretical limit (34.5 mA cm) -- and fill factor of 69.2 +/- 0.7% resulting in PCE of 10.8 +/- 0.2% under 1-Sun illumination on large active area (approximately 0.13x0.13 mm) devices have been realised. The excellent device performance is consistent with the high external quantum efficiency (up to approximately 93%) measured across a broad spectral range of 500-830 nm. Our results suggest that ultra-clean vdW contacts on WSe enable high-efficiency photovoltaics and form the foundation for further optimisation.