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Hot-Carrier Aging by Ultrafast Laser on 22FLL FinFET Technology
... Two-photon ultrafast laser absorption has been shown to induce permanent degradation in FinFET transistors. 2 The laser-assisted HC degradation reported in Ref. 2 is a different process from that using electrical HC although it exhibits many similarities. The laser technique enables the implementation of time-domain studies with multiple successive laser pulses. ...
... Ultrafast laser pulses of wavelength below the Si bandgap can produce two-photon absorption (TPA) in Si. 2 This type of photocarrier injection results in energetic carriers. The carrier energy after promotion is estimated to be ...
... 4 The process of laser-assisted HC degradation is also dependent on the internal electric fields of the targeted device. Asc azubi et al. 2 describe evidence of drain-localized damage in laser-assisted HC degradation. Figure 2 shows a sketch to explain the acceleration mechanism. ...
Hot-carrier degradation in contemporary FinFET transistors by means of ultrafast infrared laser pulses enable the study of the evolution of excited states leading to device degradation. Here, we present results from a time-resolved optical setup where additive populations of hot-carriers are photo-injected. We report the experimental observation of damage-inducing excited states with a lifetime of 170 ± 40 fs.
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated DC conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.
Hot carrier thermalization is a major source of efficiency loss in solar cells. Because of the subpicosecond time scale and complex physics involved, a microscopic characterization of hot carriers is challenging even for the simplest materials. We develop and apply an ab initio approach based on density functional theory and many-body perturbation theory to investigate hot carriers in semiconductors. Our calculations include electron-electron and electron-phonon interactions, and require no experimental input other than the structure of the material. We apply our approach to study the relaxation time and mean free path of hot carriers in Si, and map the band and k dependence of these quantities. We demonstrate that a hot carrier distribution characteristic of Si under solar illumination thermalizes within 350 fs, in excellent agreement with pump-probe experiments. Our work sheds light on the subpicosecond time scale after sunlight absorption in Si, and constitutes a first step towards ab initio quantification of hot carrier dynamics in materials.
This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.
The full semiconductor Bloch equations are solved to analyze the ultrafast exciton dynamics in semiconductors. Transient adiabatic following is obtained for large detunings and arbitrary intensities, leading to exciton Stark shift, bleaching, and recovery on the time scale of the pump pulse. The many-body Coulomb effects strongly influence the semiconductor response for resonant excitation conditions, almost doubling the effective Rabi frequency of the applied field.
In this analysis, we present emission spectra from both n- and p-channel transistors fabricated on 90 nm technology featuring 50 nm channel lengths .Time resolved emission (TRE) is an important through-silicon integrated circuit timing analysis technique, which enables noninvasive characterization of internal dynamic circuits by means of the collection and the time "stamping" of near-IR photons naturally emitted from biased transistors. Spectral analysis of hot carrier emissions in MOSFET devices is of interest for several reasons: (1) It may help to improve the bandwidth of existing TRE technologies artificially by allowing the distinction between n- and p-channel device emissions; (2) It may lead to improved TRE system response optimization; (3) It may provide new or enhanced understanding of internal device physics; and (4) It may offer deeper insight into the scalability of existing TRE technologies.