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Study on dielectric relaxation and current–voltage characteristics of Mn-doped ZrO2 nanocrystalline solid solution at and above room temperature

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In this article, we report dielectric behavior and current–voltage characteristics of manganese (Mn)-doped zirconia nanocomposite in the 298 < T < 523 K temperature range. It is observed that the electrical response is controlled by the Mn concentration present in the sample. Both ac and dc conductivities of the prepared samples are observed to increase as the temperature rises. This suggests that the prepared samples behave in a semiconducting nature. Also, the ac conductivities of the samples increase with the frequency, which is prominent beyond the hopping frequency. The complex dielectric permittivity decreases with frequency and attains saturation at high-frequency regions. The current–voltage study shows that trap height increases with temperature and sample behavior is governed by the Poole Frenkel Emission model.
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hps://doi.org/10.1007/s10854-023-11115-0
J Mater Sci: Mater Electron (2023) 34:1701
Study ondielectric relaxation andcurrent–voltage
characteristics ofMn‑doped ZrO2 nanocrystalline
solid solution atandaboveroom temperature
S.Saha1, A.Nandy2, S.K.Pradhan3,and A.K.Meikap4,*
1 Department ofPhysics, Kulti College, Kulti, WestBurdwan, WestBengal713343, India
2 Department ofPhysics, City College, Kolkata, WestBengal700009, India
3 Department ofPhysics, The University ofBurdwan, Golapbag, WestBurdwan, WestBengal713104, India
4 Department ofPhysics, National Institute ofTechnology, Durgapur, WestBurdwan, WestBengal713209, India
ABSTRACT
In this article, we report dielectric behavior and current–voltage characteristics
of manganese (Mn)-doped zirconia nanocomposite in the 298 < T < 523 K tem-
perature range. It is observed that the electrical response is controlled by the Mn
concentration present in the sample. Both ac and dc conductivities of the prepared
samples are observed to increase as the temperature rises. This suggests that the
prepared samples behave in a semiconducting nature. Also, the ac conductivities
of the samples increase with the frequency, which is prominent beyond the hop-
ping frequency. The complex dielectric permiivity decreases with frequency and
aains saturation at high-frequency regions. The current–voltage study shows
that trap height increases with temperature and sample behavior is governed by
the Poole Frenkel Emission model.
1 Introduction
Zirconia has some fascinating characters which have
aracted people from the pure research arena. Also,
technologists are interested in zirconia due to their
technical aspects. Zirconia shows basic and acidic
properties as well as oxidizing and reducing nature [1].
Three dierent polymorphs of zirconia are observed,
which convert from one form to another with tem-
perature variations. They are monoclinic phase (space
group P21/c) which exists in the temperature range of
Room temperature − 1440 K. Next is a tetragonal phase
(space group P42/nmc), which exists in the temperature
range of 1440–2650 K). Lastly, the most interesting
cubic phase (space group Fm
3
m) exists in the tem-
perature range of 2650 K to the melting point of zir-
conia. Technologists find widespread applications
of the cubic zirconia phase. Cubic zirconia exhibits
good ionic conductivity at relatively high-tempera-
ture regions. This property is essential in fabricating
oxygen pumps, oxygen sensors, and SOFCs. For this
reason, cubic zirconia is considered a high-potential
element in this field [2]. The engineered materials
are hard and they show resistance against fracture.
These wear-resistant materials are applied success-
fully in structural ceramic industries [3, 4]. The PSZ
Received: 21 February 2023
Accepted: 8 August 2023
Published online:
23 August 2023
The Author(s), under ex-
clusive licence to Springer
Science+Business Media, LLC,
© part of Springer Nature,
2023
Address correspondence to E-mail: ajit.meikap@phy.nitdgp.ac.in
Content courtesy of Springer Nature, terms of use apply. Rights reserved.
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