Pentacene thin film transistors and inverter circuits

Conference PaperinElectron Devices Meeting, 1988. IEDM '88. Technical Digest., International · January 1998with5 Reads
DOI: 10.1109/IEDM.1997.650442 · Source: IEEE Xplore
Conference: Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

    Abstract

    Organic thin film transistors and simple electronic circuits have
    been fabricated using the fused-ring small-molecule aromatic hydrocarbon
    pentacene as the active material. Carrier field-effect mobilities
    greater than 0.2 cm<sup>2</sup>/V-s were obtained for thin film
    transistors fabricated on glass using low-temperature ion-beam deposited
    silicon dioxide as the gate dielectric and thermally evaporated
    pentacene as the active material. Using similar transistors, integrated
    voltage inverters with voltage gain large enough to be useful for the
    fabrication of electronic circuits have been fabricated