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Characterization of Silicon Photomultiplier (SIPM) by Pulsed Lasers as a Detector for Space Applications

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In this work, we investigated a silicon photomultiplier's (SiPM) laser pulse duration and wavelength-dependent characteristics. Both continuous (CW) and femtosecond pulsed lasers were used to illuminate the SiPM. Also, an amplifying circuit was built to acquire signals from SiPM and simulation and experimental responses were presented and discussed the possibility to use for space applications of the detector.
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Characterization of Silicon Photomultiplier (SIPM) by
Pulsed Lasers as a Detector for Space Applications
Erhan Ermek1, b) and Abdullah Kepceoğlu2, a)
Author Affiliations
1Department of Mechanical Engineering, Faculty of Engineering, Koc University, Istanbul, Türkiye
2Department of Molecular Biology and Genetics, Faculty of Science, Koc University, Istanbul, Türkiye
Author Emails
a) Corresponding author: abdullahkepceoglu@gmail.com
b) eermek@ku.edu.tr
Abstract. In this work, we investigated a silicon photomultiplier's (SiPM) laser pulse duration and wavelength-dependent
characteristics. Both continuous (CW) and femtosecond pulsed lasers were used to illuminate the SiPM. Also, an
amplifying circuit was built to acquire signals from SiPM and simulation and experimental responses were presented and
discussed the possibility to use for space applications of the detector.
INTRODUCTION
Silicon photomultipliers (SiPMs) are photodetectors which have very high photon detection efficiency (PDE), low
rise time, and detection down to one photon level. Various properties of the SiPMs were investigated in the literature
[1]. Timing properties of the SiPMs (Hamamatsu MPPC S10931-025P, S10931-050P and S10931-100P) were
investigated in terms of the bias voltage [2]. Also, performance measurements of the low-temperature properties were
reported where SiPMs were used to measure radon concentrations [3]. New approaches have been applied to
characterize the main parameters of the SiPMs (MPPC S10362-11-050C) by using picosecond laser [4] and using
femtosecond lases (FBK SiPM-NUV3S) [5]. In addition, SiPMs' responses were investigated both experimentally
(using KETEK SiPM with 4382 15 µm × 15 µm [6]) and theoretically [7-9].
SiPMs has a wide range of applications; on-site detection of the chemicals [10], as large area sensor for high
performance applications [11], in the fluorescence detection [12], in the nuclear detection [13, 14], nuclear imaging
systems [15], neutron detection [16], low energy electrons and protons detection [17]. Also, SiPM is used in space-
borne applications [18] and especially in mass spectrometers as an ion detector [19, 20], in velocity map imaging
setups [21] and electron momentum imaging [22].
MATERIAL AND METHODS
SiPM used in this work is OnSemi MICROFC-SMTPA-30020-GEVB, (C−Series sensors have a fast output that
can have a rise time of 300 ps and a pulse width of 600 ps) and has a 3 mm×3 mm active sensor area with 48% fill
factor, 20 µm microcell size and have 10998 microcells, and SMT sensor mounted onto a pin adapter board. The
spectral range cover from 300 nm to 950 nm. Peak photon detection efficiency (35%) at 420 nm and encapsulant
refractive index is 1.59 at 420 nm. Breakdown voltage is between 24.2-24.7 V having >106 gain (anode to cathode
readout), the dark current between 50-142 nA, 770 pF capacitance (data obtained from the datasheet of the SiPM
detector [23]).
In this work, CW (3900S CW Tunable Ti:Sapphire Laser pumped by Millennia eV High Power CW DPSS Laser)
and as a pulsed lasers TOPAS prime OPA pumped by Spitfire Ace (wavelength tuned for 400 nm) by Spectra-Physics
(100-fs, 1-kHz, ultrafast laser amplifier operating at 800 nm with 4 mJ of output energy) were used to characterize the
SiPM.
FIGURE 1. Experimental setup used in the tests (using CW and Pulsed lasers) of the SiPM detector
We have made two versions of the detector. The first version (V1) uses an OPA-354 type op-amp circuit and the
results were presented in Figure 2. Following the results of the V1, we have modelled the detector case and 3D printed,
thus, V2 of the SiPM detector with a fiber optic cable mountable SMA fiber adapter plate with external SM1 (1.035in-
40) threads (SM1SMA Thorlabs Inc, USA) and attached it to the case with 1-inch Stackable Lens Tubes (SM1L03,
Thorlabs Inc, USA). Also, a 1-inch diffuser was mounted between the SMA fiber adapter plate and the SiPM sensor.
FIGURE.2. First prototype of the SiPM detector (with OPA354 op-amp circuit) and second version of the detector (LMH6629
op-amp used in the TIA circuit)
RESULTS
The first tests of the SiPM amplifier circuit were conducted with a blue LED as an input signal. Amplifier circuits
were designed by using OPA-354 and LMH6-629 op-amps, and a 350 MHz oscilloscope was used (Rigol MSO5204
- firmware upgraded to 350 MHz) to collect output signals from the SiPM, oscilloscope was triggered by using an
LED driving pulse from the signal generator (Rigol DG4102). The bias voltage dependent SiPM output signals were
presented from Figure 5 to Figure 7. Ch1 is the trigger from the fs laser, and Ch2 is the SiPM detector response.
Detector output amplified with OPA-354.
FIGURE 3. Bias circuit for the fast output [23]
FIGURE 4. SiPM detector OP-AMP circuit design (a) and simulation of the pulse response of an OPA-354 amplifier obtained by
LTspice simulation software (b)
(a)
(b)
FIGURE 5. Ch1 is the trigger from the fs laser, and Ch2 is the SiPM detector response. Detector output amplified with OPA-354
FIGURE 6. Bias Voltage Dependent SiPM output traces
FIGURE 7. Bias Voltage Dependent SiPM output signal plots and change of the signal peak amplitude
The pulse response of an LMH-6629 amplifier-Ltspice Software Simulation is presented in Figure 8. The input
signal is 10 mV amplitude having a 1 ns pulse duration (Figure 8(a)) corresponding to a 0.1 ns output pulse (Figure
8(b)).
(a)
(b)
FIGURE 8. SiPM detector OP-AMP circuit design (a) and simulation of the pulse response of a LMH-6629 amplifier obtained
by LTspice simulation software (b)
Figure 9. SiPM detector output tested with blue LED driven by 850 kHz sinc function. Sinc function rise time 12.5 ns, detector
output rise time 12.5 ns.
Figure 10. SiPM detector output tested with blue LED driven by 850 kHz sinc function. Detector output amplified with LMH-
6629. Noise oscillations are more visible. Detector output rise time 6.5 ns.
SiPM detector output tested with blue LED driven by a pulse generator with an 850 kHz sinc function. The input
sinc function rise time is measured as 12.5 ns, and the detector output signal obtained from the fast output of the SiPM
detector (as described in Figure 2.) rise time was measured as 12.5 ns. SiPM detector output tested with blue LED
driven by a pulse generator with an 850 kHz sinc function. Detector output amplified with LMH-6629 circuit. In this
case, noise oscillations are more visible than the signal obtained from the fast output of the SiPM detector. Detector
output rise time measured as 6.5 ns (Figure 10.).
CONCLUSION
In this work, firstly SiPMs properties were described and then experimental setup, circuit design and
characterization of the SiPM detector were presented. LMH-6629 performed better than the OPA-354 circuit in terms
of the rise time and background noise. The lowest rise time values of the output signals were obtained for the LMH-
6629 op-amp circuit or direct fast output of the SiPM. As a result, we have shown that to collect data from the SiPM,
either SiPM fast output or an amplifier op-amp circuit (designed with LMH-6629 or OPA-354) with an ADC can be
used. With optimization and using PCB for the amplification circuit and antistatic cage, both pulse characteristics (rise
time, oscillation etc.) and noise can be improved. In future works, V2 (Figure 2) of the detector will be used as an ion
detection system in a mass spectrometry system adding a before fluorescence screen and a similar setup will be used
to trigger the oscilloscope by using a leaked laser output or using a beam sampler.
ACKNOWLEDGMENTS
This work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant
No. 118C476 and Grant No. 122F301. However, the entire responsibility of the publication belongs to the authors of
the publication. The financial support received from TÜBİTAK does not mean that the content of the publication is
approved in a scientific sense by TÜBİTAK.
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