A comparison is made of arsenic diffusion in Si0.95Ge0.05 produced by epitaxy and ion beam synthesis using a 2 x 1016cm-2Ge+ implant into silicon. The arsenic diffusion depth at 1025 degrees c in the Si0.95Ge0.05 epitaxy sample is enhnaced by a factor of 1.26 compared with a similar Si control sample and by a factor of 1.30 in the ion beam synthesized sample. The arsenic diffusion in the Si0.95
... [Show full abstract] Ge0.05 epitaxy sample is modeled by increasing the arsenic diffusion coefficient from the Si value of 1.92 x 10-15 to 5.15x10-15cm2s-1, and in the ion beam synthesized sample by using the same diffusion coefficient of 5.15x10-15cm2s-1 and increasing the "plus one" factor in the transient enhanced diffusion model from 0.01 to 1.5. Arsenic diffusion in a silicon sample implanted with 2x1015cm-2Si+ can be modeled using the same plus one factor of 1.5, thereby demonstrating the consistency of the modeling.