Dual-axis control of magnetic anisotropy in single crystal Co 2 MnSi thin film through piezo-voltage-induced strain

Abstract

Voltage controlled magnetic anisotropy (VCMA) has been considered as an effective method in traditional magnetic devices with lower power consumption. In this article, we have investigated the dual-axis control of magnetic anisotropy in Co2MnSi/GaAs/PZT hybrid heterostructures through piezo-voltage-induced strain using longitudinal magneto-optical Kerr effect (LMOKE) microscopy. The major modification of in-plane magnetic anisotropy of the Co2MnSi thin film is controlled obviously by the piezo-voltages of the lead zirconate titanate (PZT) piezotransducer, accompanied by the coercivity field and magnetocrystalline anisotropy significantly manipulated. Because in-plane cubic magnetic anisotropy and uniaxial magnetic anisotropy coexist in the Co2MnSi thin film, the initial double easy axes of cubic split to an easiest axis (square loop) and an easier axis (two-step loop). While the stress direction is parallel to the [1-10] easiest axis (sample I), the square loop of the [1-10] direction could transform to a two-step loop under the negative piezo-voltages (compressed state). At the same time, the initial two-step loop of the [110] axis simultaneously changes to a square loop (the easiest axis). Otherwise, we designed and fabricated the sample II in which the PZT stress is parallel to the [110] two-step axis. The phenomenon of VCMA was also obtained along the [110] and [1-10] directions. However, the manipulated results of sample II were in contrast to those of the sample I under the piezo-voltages. Thus, an effective dual-axis regulation of the in-plane magnetization rotation was demonstrated in this work. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in the future.

Full text

rsc.li/nanoscale-advances
Volume 4
Number 16
21 August 2022
Pages 3293–3408
ISSN 2516-0230
PAPER
Chunlong Li, Zongliang Huo et al.
Dual-axis control of magnetic anisotropy in a single crystal
Co2MnSi thin fi lm through piezo-voltage-induced strain
Nanoscale
Advances

Dual-axis control of magnetic anisotropy in a single
crystal Co
2
MnSi thin film through piezo-voltage-
induced strain
Bao Zhang,
a
Siwei Mao,
bc
Chunlong Li,*
ad
Peizhen Hong,
a
Jingwen Hou,
a
Jianhua Zhao
bc
and Zongliang Huo *
ade
Voltage controlled magnetic anisotropy (VCMA) has been considered as an effective method in traditional
magnetic devices with lower power consumption. In this article, we have investigated the dual-axis control
of magnetic anisotropy in Co
2
MnSi/GaAs/PZT hybrid heterostructures through piezo-voltage-induced
strain using longitudinal magneto-optical Kerr effect (LMOKE) microscopy. The major modification of in-
plane magnetic anisotropy of the Co
2
MnSi thin film is controlled obviously by the piezo-voltages of the
lead zirconate titanate (PZT) piezotransducer, accompanied by the coercivity field and
magnetocrystalline anisotropy significantly manipulated. Because in-plane cubic magnetic anisotropy
and uniaxial magnetic anisotropy coexist in the Co
2
MnSi thin film, the initial double easy axes of cubic
split to an easiest axis (square loop) and an easier axis (two-step loop). While the stress direction is
parallel to the [110] easiest axis (sample I), the square loop of the [110] direction could transform to
a two-step loop under the negative piezo-voltages (compressed state). At the same time, the initial two-
step loop of the [110] axis simultaneously changes to a square loop (the easiest axis). Otherwise, we
designed and fabricated the sample II in which the PZT stress is parallel to the [110] two-step axis. The
phenomenon of VCMA was also obtained along the [110] and [110] directions. However, the
manipulated results of sample II were in contrast to those of the sample I under the piezo-voltages.
Thus, an effective dual-axis regulation of the in-plane magnetization rotation was demonstrated in this
work. Such a finding proposes a more optimized method for the magnetic logic gates and memories
based on voltage-controlled magnetic anisotropy in the future.
Introduction
Pure electrical manipulation of magnetization rotation in
magnetic devices is a desirable way for spintronic applications,
which is suitable for the scaling of devices in the integrated
circuit. To date, there have been multiple types of electrical
manipulation ways of the magnetization rotation or magnetic
anisotropy variation, such as spin–orbit torque (SOT),
1–7
spin
transfer torque (STT),
8–11
magneto-electrical coupling (MEC)
effect,
12–17
and strain.
18–25
The piezo-voltage-induced strain, as
a way of voltage-controlled magnetic anisotropy (VCMA), has
attracted the attention of many researchers due to the
performance of low-power consumption.
22,25
The main studies
of strain controlled magnetization are related to the inverse
piezoelectric effect of piezoelectric materials in the
ferromagnetic/piezoelectric heterostructure. The magneto-
crystalline anisotropy is controlled by voltage through the
piezo-voltage-induced strain transformed to the magnetic thin
lm. Usually, the change of magnetocrystalline anisotropies is
related to the strain-manipulated variations of the lattice
constant.
23
However, the previous relative studies of strain-
controlled magnetization rotation were mainly demonstrated
in a uniaxial regulation manner.
22–24,26
The stress regulation
characteristic disappears or weakens when the specic crystal
orientation of magnetic thin lms rotates relative to the stress
axis. This problem would be effectively avoided by realizing
dual-axis or multi-axis stress-regulated magnetization rotation.
However, the related research is still relatively lacking.
In recent years, the Co-based full-Heusler alloys have
attracted considerable interest due to the high spin polarization
and Curie temperature,
27
which are promising candidates for
the next generation information processing and storage in
spintronic devices. The coexistence of the in-plane cubic and
uniaxial magnetic anisotropies was observed when Heusler
a
Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China.
E-mail: huozongliang@ime.ac.cn
b
State Key Laboratory of Superlattices and Microstructures, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
c
Center of Materials Science and Optoelectronics Engineering, University of Chinese
Academy of Sciences, Beijing 100190, China
d
College of Microelectronics, University of Chinese Academy of Sciences, 100049
Beijing, China. E-mail: lichunlong@ime.ac.cn
e
Yangtze Memory Technologies Co., Ltd (YMTC), 430205 Wuhan, China
Cite this: Nanoscale Adv., 2022, 4,
3323
Received 14th December 2021
Accepted 25th May 2022
DOI: 10.1039/d1na00864a
rsc.li/nanoscale-advances
© 2022 The Author(s). Published by the Royal Society of Chemistry Nanoscale Adv., 2022, 4,3323–3329 | 3323
Nanoscale
Advances
PAPER

alloys are deposited on the GaAs (001) substrate.
28–30
The initial
in-plane easiest axis (square loop) and easier axis (two-step
loop) have been measured along two axes of minimum value
of the cubic anisotropy, which is caused by the superposition of
the uniaxial anisotropy. It is well known that a uniaxial stress
could induce an extra uniaxial anisotropy in magnetic lms.
Thus, using the competition of uniaxial anisotropy induced by
interface and stress in magnetic lms can realize the regulation
of magnetic anisotropy energy and magnetization rotation.
In this work, we have studied the dual-axis control of
magnetic anisotropy in the Co
2
MnSi/GaAs/PZT heterostructures
through piezo-voltage-induced strain. By studying the variation
of the magnetic coercivity (H
c
) and remnant magnetization (M
r
)
in Co
2
MnSi magnetic thin lm, the strong voltage-controlled
magnetic anisotropy was veried. Furthermore, we measured
the periodic-strain controlled magnetization by applying pulsed
piezo-voltages. Two stable states have been achieved with the
periodic measurement in two samples. The dual-axis control of
the magnetic anisotropy in this work proposes a method of
voltage-controlled magnetic logic devices, which will simplify
the growth process of magnetic materials and reduce energy
consumption.
Methods
The 10 nm Co
2
MnSi thin lm was grown at 250 C on a GaAs
(001) substrate using molecular-beam epitaxy (MBE).
28,29
Its
Curie temperature is 985 K.
27
Following the growth of 10 nm-
thick single crystal Co
2
MnSi, a 3 nm thick platinum (Pt) layer
was deposited to avoid the oxidation (as shown in Fig. 1a). In
order to guarantee that the strain induced by the lead zirconate
titanate (PZT) piezotransducer can be effectively transferred to
the Co
2
MnSi lm, we thinned the GaAs substrate of the sample
to 100 mm before it was bonded to PZT by two-component epoxy.
To study the dual-axis control of magnetic anisotropy, the
[110] and [110] directions of Co
2
MnSi samples are parallel to
the z-axis of PZT, respectively. The Co
2
MnSi/GaAs/PZT hetero-
structure was in a compressed state when the piezo-voltage was
negative, and in a stretched state when the piezo-voltage was
positive (as shown in Fig. 1a). The magnitude of the additional
uniaxial strain for a piezo-voltage of 80 V is approximately 5.2 
10
4
.
30
The magnetization vectors of the Co
2
MnSi samples (S¼
34mm
2
) were measured by longitudinal magneto-optical
Kerr microscopy (Nano MOKE3) and a superconducting
quantum interference device (SQUID) magnetometer. The
piezo-voltages were applied with an Agilent B1500A with the
leading and trailing time being both 100 ns. All the measure-
ments were carried out at room temperature.
Results and discussion
Fig. 1a shows the schematic diagram of Co
2
MnSi/GaAs/PZT
heterostructures controlled by piezo-voltage-induced strain.
Two samples of Co
2
MnSi/GaAs are bonded to the PZT, where
the [110] and [110] crystal orientations are parallel to the z-axis
in samples I and II, respectively. The piezoelectric ceramic
blocks are stacked along the zdirection, and the reverse
piezoelectric effect appears in the d
33
mode (the inset gure
shows the schematic of an axially acting multilayer piezo-stack).
When the positive and negative piezo-voltages (U
PZT
) are
applied, the PZT would exhibit a tensile and compressive strain,
respectively.
23
Under the stress regulation, the samples I and II
will undergo different regulation effects. Fig. 1b shows the
initial magnetic hysteresis loops of the Co
2
MnSi thin lm along
the [110], [110] and [100] directions. The saturation magneti-
zation M
s
is about 884 emu cm
3
. The [110] orientation is an
easy axis with a square loop and the [110] orientation is a two-
step loop with M
r
¼0 when the magnetic eld is zero. The
[100] orientation is a hard axis with a 400 Oe saturation eld
(the saturated magnetized state in the [100] direction is shown
in the inset of Fig. 1b).
To further study the dual-axis control of magnetic anisotropy
in Co
2
MnSi/GaAs/PZT heterostructures, we measured the
magnetic hysteresis loops of two samples along the [110],
[110] and [100] directions under positive and negative piezo-
voltages. Fig. 2 shows the piezo-voltage controlled magnetic
hysteresis loops in sample I. With the piezo-voltages increasing
from 10 to 40 V, the loops of the [110] direction kept stabi-
lized (as shown in Fig. 2a). At the same time, we also measured
the loops of the [110] direction and the loops changed to a two-
step loop, accompanied by increasing the saturation eld from
6.1 to 13.1 Oe (as shown in Fig. 2c). From there, the stretched
Fig. 1 (a) The schematic diagram of Co
2
MnSi/GaAs/PZT hetero-
structures controlled by piezo-voltages. When the piezo-voltages
were applied, the direction of the strain is parallel to the z-axis. The
[110] and [110] directions are parallel to the z-axis in samples I and II,
respectively. The inset figures are the schematic of an axially acting
multilayer piezo-stack and the structure of the magnetic film. (b) The
magnetic hysteresis loops of the Co
2
MnSi thin film in the initial state
along the in-plane [110], [110], and [100] directions. The inset shows
the saturated magnetization in the [100] direction with 420 Oe
magnetic field.
3324 |Nanoscale Adv., 2022, 4, 3323–3329 © 2022 The Author(s). Published by the Royal Society of Chemistry
Nanoscale Advances Paper

strain could effectively manipulate the in-plane magneto-
crystalline anisotropy. In contrast, we also measured the loops
compression state under negative piezo-voltages. The magnetic
hysteresis loops of the [110] easy axis showed obvious regu-
latory phenomena (as shown in Fig. 2b). With the piezo-voltages
changing from 30 to 60 V, the saturation eld of the two-step
loop increased from 7.2 to 16.5 Oe. However, the loop of the
[110] axis changed to a square curve and kept stabilized (as
shown in Fig. 2d). Through the regulation of piezo-voltages, we
can obtain two completely opposite and stable phenomena
under 40 V (as shown in Fig. 3a and b), which would be able to
meet the needs of two states and facilitate the design of
magnetic storage and logic devices. In order to clarify the
discipline of VCMA in sample I, the dependence of the satura-
tion eld with piezo-voltages along the [110] and [110] direc-
tions is summarized in Fig. 3c. Obviously, the saturation eld
changes gradually with the piezo-voltage and the variation trend
of the saturation eld is exactly opposite in the [110] and [110]
directions. It indicates that the in-plane magnetocrystalline
anisotropy of the Co
2
MnSi lm is obviously controlled under
the regulation of piezo-voltages. In addition, we also measured
the magnetic hysteresis loops along the [100] crystal direction
(as shown in Fig. 3d). The loops of the [100] direction keep
a hard axis loop with a slight change of coercive eld under
positive or negative piezo-voltages. Through the study of piezo-
voltage controlled in-plane crystalline anisotropy in sample I,
the VCMA is well demonstrated in the Co
2
MnSi/GaAs/PZT
heterostructures.
In order to verify the dual-axis control of magnetic anisotropy
in the Co
2
MnSi thin lm,wealsostudiedtheVCMAinsampleII.
Similar to the measurement of sample I, we have detected the
variations of the magnetic hysteresis loops along the [110], [110]
and [100] directions under positive and negative piezo-voltages.
Fig. 4a and b show the loops of the [110] crystal direction with
the piezo-voltages. With the stress parallel to the [110] direction,
the manipulation phenomenon of VCMA is obvious. When we
applied a positive piezo-voltage to the PZT, the loop of the [110]
direction changes to a square curve from a two-step loop, which
indicates that [110] has been converted to an easy magnetized
axis. However, the [110] direction keeps a two-step loop under the
negative piezo-voltages (compressed state) (as shown in Fig. 4b).
The saturation eld increased with the piezo-voltages changing
from 20 to 50 V. In order to analyze the variation of magne-
tocrystalline anisotropy, we measured the magnetic hysteresis
loop of the [110] direction under positive and negative piezo-
voltages. In contrast to sample I, the magnetic hysteresis loops
of the [110] varied from a square curve to a two-step loop with
the piezo-voltage increasing from 10 to 60 V (as shown in
Fig. 4c). Under the negative piezo-voltages, the loops of the
[110] direction keep the square curve stabilized (as shown in
Fig. 4d). We also measured the magnetic hysteresis loops of the
[100] hard magnetic axis and the loops maintained the hard
magnetic properties with the positive or negative piezo-voltages
(only a part of the loops shown in Fig. 5b). Through the
magnetic measurement along different directions, we summa-
rized the variation of the saturated eld with the piezo-voltage in
Fig. 5a. The saturated elds of [110] and [110] directions show
opposite trends with the piezo-voltages. When the piezo-voltage
increases to 40 V, the [110] direction has a large saturated
eld and shows a two-step loop. When the piezo-voltages
Fig. 2 The magnetic hysteresis loops under different piezo-voltages (from 60 V to 50 V; step is 10 V) along the in-plane [110] and [110]
directions. (a) The magnetic hysteresis loops in the [110] direction are square curves with U
PZT
>10 V. (b) Contrary to (a), the square curve
changed to two-step curves with U
PZT
<30 V and the saturated field increased with the increase of U
PZT
absolute value. (c) The magnetic
hysteresis loops in the [110] direction are changed to two-step curves from square curves with U
PZT
> 0 V. (d) The magnetic hysteresis loops keep
the square curve with U
PZT
<30 V (compressed states).
© 2022 The Author(s). Published by the Royal Society of Chemistry Nanoscale Adv., 2022, 4,3323–3329 | 3325
Paper Nanoscale Advances

changed from 10 to +20 V, the [110] direction varied to a two-
step loop and the [110] direction varied to a square loop
(easiest magnetization axis). From the measurement of sample II,
we once again demonstrated the piezo-voltage control of mag-
netocrystalline anisotropy in the Co
2
MnSi/GaAs/PZT
heterostructures.
Fig. 3 The magnetic properties of the Co
2
MnSi film under different piezo-voltages. (a) Compared with the Co
2
MnSi film under different piezo-
voltages, the magnetic hysteresis loops of [110] and [110] directions keep square and two-step curves with U
PZT
¼40 V (stretched states),
respectively. (b) The two-step axis and the square axis are exchanged with U
PZT
¼40 V (compressed states). (c) The piezo-voltage dependence
of the saturation field in the [110] and [110] directions; the voltage step is 5 V. (d) The magnetic hysteresis loops maintain the hard axis in the
[100] direction under different piezo voltages.
Fig. 4 The magnetic hysteresis loops under different piezo-voltages (from 40 V to 90 V, step is 10 V) along the in-plane [110] and [110]
directions of the sample II. (a) The magnetic hysteresis loops in the [110] direction change to square curves from two-step curves with U
PZT
>20V
(stretched states). (b) The magnetic hysteresis loops in the [110] direction keep the two-step curves with U
PZT
<20 V and the saturation field
increase with the negative piezo-voltage increase. (c) The magnetic hysteresis loops in the [110] direction are changed to two-step curves from
square curves with U
PZT
> 40 V. (d) The magnetic hysteresis loops keep the square curve with U
PZT
<20 V in the [110] direction.
3326 |Nanoscale Adv., 2022, 4,3323–3329 © 2022 The Author(s). Published by the Royal Society of Chemistry
Nanoscale Advances Paper

Through the demonstration of dual-axis control of magnetic
anisotropy in epitaxial Co
2
MnSi thin lms through piezo-
voltage-induced strain, we could achieve a purely electrical
controlled magnetization rotation. The magnetization rotation
could attribute to an extra in-plane uniaxial anisotropy induced
by the piezo-voltage in the Co
2
MnSi thin lms. In order to
quantify the magnetocrystalline anisotropy of Co
2
MnSi thin
lms with the piezo-voltages, the magnetic anisotropy energy E
can be described as
31
E¼1
4KCsin2ð2qÞþKUsin2qHMScosðqaÞ(1)
where K
U
and K
C
are the effective uniaxial and cubic anisotropy
constants respectively, His the applied external magnetic eld,
M
S
is the saturation magnetization, qis the angle between the
magnetization and the easiest axis [110], and ais the angle
between the external magnetic eld and the easiest axis [110]
(see the inset of Fig. 5b). With the saturation eld and slope of
the two-step loops, the K
U
and K
C
can be calculated as
KC¼1
2
MSp1þHSp s
HSp3s3þHSp 2s2þHSpsþ1s(2)
KU¼1
2
MSHSpHSp 2þHSpsþ2
HSp3s3þHSp 2s2þHSpsþ1(3)
where H
Sp
is the so-called split eld and sis the constant slope
between H
Sp
and H
Sp
.
31
In this work, we calculated the values
of K
U
and K
C
under 40 V piezo-voltages in sample I. The K
U
and
K
C
are obtained to be 1.28 0.06 kJ m
3
and 17.69 0.88 kJ
m
3
with a piezo-voltage of 40 V, respectively. When the piezo-
voltage is 40 V, the K
U
and K
C
transform to 0.83 0.04 kJ
m
3
and 10.64 0.53 kJ m
3
, respectively. Obviously, the
easiest magnetization axis is changed from [110] (U
PZT
¼40 V)
to [110] (U
PZT
¼40 V) direction. For sample II, the values of K
U
and K
C
are also obtained to be 0.91 0.05 kJ m
3
(0.77 0.04
kJ m
3
) and 12.42 0.62 kJ m
3
(18.62 0.93 kJ m
3
) under
a piezo-voltage of 40 V (40 V), which also induced the trans-
formation of the easiest magnetization axis and magnetization
90rotation.
Based on the demonstration of dual-axis control of magne-
tization rotation in Co
2
MnSi/GaAs/PZT heterostructures, it will
be promising to be applied in the design of magnetic functional
devices, such as magnetic tunneling junction (MTJ) and planar
Hall devices. To further study the response performance of the
Co
2
MnSi/GaAs/PZT device, we measured the magnetization
during the periodic change of piezo-voltage between 40 and
40 V in sample I without the external magnetic eld. The
magnetization periodically switched from 7.5 to 2.3 mdeg,
which correspond to the ‘1’and ‘0’states of the logic device (as
shown in Fig. 6). The time response of the piezo-voltage
controlled device has been investigated, where the rising and
falling time are 361.7 ms and 376.2 ms, respectively. Therefore,
we could utilize voltage control of magnetization rotation to
design and fabricate the magnetic logical arrays to realize the
information processing in Heusler alloys. Our study identied
that the dual-axis control of magnetization rotation through
strain engineering could have a great prospect for spintronic
applications.
Conclusions
In summary, we have demonstrated the dual-axis (the [110]
and [110] directions) control of magnetic anisotropy in epitaxial
Co
2
MnSi thin lms through piezo-voltage induced strain.
Furthermore, we demonstrated the periodically voltage-
controlled magnetization rotation in the Co
2
MnSi/GaAs/PZT
heterostructure. Under applied piezo-voltages, the in-plane
magnetization rotation could be implemented without extra
Fig. 5 The magnetic properties of the Co
2
MnSi film under different
piezo-voltages. (a) The piezo-voltage dependence of the saturation
field in the [110] and [110] directions; the voltage step is 10 V. (b) The
magnetic hysteresis loops maintain the hard axis in the [100] direction
under different piezo-voltages. The inset is the definition of the qand
a.q(a) is the angle between the magnetization (magnetic field) and
[110] direction.
Fig. 6 The periodic changes of the magnetization (shown as Kerr
signal) in sample I with the periodic change of the piezo-voltage
between 40 V and 40 V without the external magnetic field.
© 2022 The Author(s). Published by the Royal Society of Chemistry Nanoscale Adv., 2022, 4, 3323–3329 | 3327
Paper Nanoscale Advances

magnetic eld. The piezo-voltage-induced strain is the primary
mechanism in the Co
2
MnSi/GaAs/PZT heterostructure, which
induces an extra uniaxial anisotropy along the in-plane crys-
talline orientation of the Co
2
MnSi lm and manipulates the
direction of the minimal anisotropy energy. Compared with the
uniaxial control effect of many magnetic materials, the dual-axis
control of Co
2
MnSi could be manipulated effectively through
the strain and is more suitable for the magnetic logic devices.
This result will pave the way to the design and fabrication of
dual-axis control of spintronic devices based on the voltage-
controlled magnetic anisotropy.
Author contributions
B. Z. and C. L. conceived the work. S. M. performed the sample
growth. B. Z. fabricated the devices and performed the experi-
ments. B. Z., C. L., P. H. and Z. H. analyzed the data. B. Z., C. L. J.
Z. and Z. H. wrote the manuscript. All authors discussed the
results and commented on the manuscript.
Conflicts of interest
There are no conicts to declare.
Acknowledgements
This work was supported by the National Key Research and
Development Program of China (Grant No. 2018YFB1107700)
and the National Science and Technology Major Project of
China (Grant No. 21-02). This work was also supported by the
Chinese Academy of Sciences (Grant No. 51E0SR03B001) and
the National Natural Science Foundation of China (NSFC)
(Grant No. 62104250).
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