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Photovoltaic solar energy

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Abstract

This chapter evaluates the synthesis of polysilicon and the development of photovoltaic panels for the production of electricity from solar energy. The process from quartz to solar grade silicon is analyzed unit by units presenting the mechanism and its kinetics as well as the units themselves. Next, the solar cells are analyzed and their efficiency in capturing solar energy as electrical circuits evaluating the production of electricity from them in a third section of the chapter.

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... A solar panel is a flat plate, composed of materials such as: silicon, cadmium telluride, CIGS (indium, gallium and selenium or sulfur), semiconductor polymers and others [23], which in principle absorbs energy from photons and transforms solar energy by means of the photovoltaic effect into electrical energy [24], [25]; this conversion is carried out through solar cells where a constant electromagnetic field is created [26]. ...
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Introduction: This paper is the product of the investigation “Identification of relevant variables in the development of photovoltaic solar projects in Colombia” developed at the Universidad Distrital Francisco José de Caldas (UDFJC) between 2020 and 2021. Due to the increase in the number of photovoltaic energy projects in Colombia, it is necessary to quantify the level of relevance related with the factors involved in order to optimize the planning and execution processes. Methods: In this research, the Delphi methodology is applied to evaluate a set of variables selected from literature, putting them to an evaluation by a group of experts with the purpose of quantifying the relationship, under a subjective judgment, between those variables and parameters immersed in low power photovoltaic solar projects in Colombia. Together with the Delphi method, the Torgerson Model was used to quantify what experts said, in order to determine which variables are the most relevant ones to the experts. Subsequently, the validation of these answers is carried out with the application of a second evaluative stage throughout the application of structured instruments. Resultados: Luego de obtener el consenso general, se analizan los resultados con el ideal de identificar las variables que obtuvieron un mayor nivel de relevancia, en las cuales se identificaron seis variables relevantes. Conclusiones: Este trabajo muestra cómo los resultados de los procesos de investigación obtienen las variables más relevantes, siendo 6 variables en total, y se analiza su impacto. Originalidad: Aplicando el método Delphi, es posible encontrar las variables más relevantes en el desarrollo de proyectos solares fotovoltaicos de baja potencia en Colombia, haciendo de este trabajo un elemento importante en el avance de las energías renovables. Limitación: No se logró una muestra masiva de resultados por la dificultad de contactar a los profesionales adecuados en el área analizada.
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... For the selection of a solar PV panel of a solar dryer, the primarily concerned parameter is its cost-effectiveness [125]. Since the dominant material within the PV industry is silicon [126], Si-based solar PV panels are now manufactured at a very low cost, while CIGS and CdTe ones are remaining at a more expensive level [127]. ...
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Over recent years, there has been marked recent improvements in the efficiency of energy conversion of photovoltaics, enhancing this technology's potential as a long term energy generation option. This paper describes the physics behind these improvements and outlines factors placing the upper bounds upon perfommance, suggesting paths towards increased efficiency in the future.
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For an installed silicon based solar cell panel, about 40% of the energy costs involved in the production of the panels can be attributed to the production of the silicon feedstock itself (poly production and crystal growth). Hence reducing the energy consumption in these steps is crucial in order to minimize the energy payback time of installed capacity. For the first step, viz., the poly production, the most promising cost reduction alternative is the fluidized bed reactors (FBR) using silane as a precursor rather than trichlorosilane (TCS) since for TCS the reverse reactions makes the theoretical trichlorosilane conversion substantially lower. Use of silane has, however, many challenges and scaleup to larger capacity can be achieved if associated risks are properly dealt with. This paper outlines some of these challenges and provides a detailed survey of the current status on the growth mechanism and kinetics of silane pyrolysis. The paper also provides a summary of modeling of fluidized bed reactors (FBR) in some depth and give some empirical insight to key aspects in FBR scaleup design.
Article
Solar grade silicon, as a starting material for crystallization to produce solar cells, is discussed here in terms of impurities whose maximum content is estimated from recent literature and conferences. A review of the production routes for each category of solar-grade silicon (undoped, compensated or heavily compensated) is proposed with emphasis on the metallurgical route.Some recent results are proposed concerning segregation, showing that directional solidification systems can be used for solidification even at high solidification rate (15 cm/h). Results on inductive plasma purification, where boron is evacuated as HBO in a gas phase blown from an inductive plasma torch, are shown to apply as well to arc plasmas and purification by moist gas.Special attention is paid to the history of impurities in the purification processes, showing that impure auxiliary phases (silicon tetrachloride, slag, aluminum, etc.) often need their own purification process to enable their recycling, which has to be considered to evaluate the cost (financial, energetic and environmental) of the purification route.
Article
The work presented here pertains to the study of hydrochlorination of silicon in a fixed bed reactor to produce primarily trichlorosilane. Most of the data on this reaction system is patented. Reaction takes place between hydrogen chloride gas and dry silicon powder in a fixed bed condition. The optimum temperature for this reaction was determined by changing the reaction temperature and collecting the condensed product of this reaction, i.e. trichlorosilane, and was found to be 321°C at atmospheric pressure. Using the reaction kinetics theory, fixed bed reaction rate constants were determined for 124, 141, 160, 208 and 438 µm average silicon particle sizes at 321°C and atmospheric pressure. It was observed that the fixed bed reaction rate constant values were of the same order and around 0.7 s. The conversion of HCl increases with a decrease in particle size of silicon and lowering of the superficial velocity of HCl gas.
Article
A detailed mathematical model for the hot-wall, multiple-disk-in-tube, low-pressure, chemical vapor deposition reactor is developed by using reaction engineering concepts. This model includes the convective and diffusive mass transport in the annular flow region formed by the reactor wall and the edges of the wafers as well as the surface reactions on the reactor wall. In addition, the model describes the coupling of diffusion between and reaction on the wafers. The model predictions show good quantitative agreement with published experimental data from different sources.
Article
A general model has been developed for multicomponent‐multireaction systems in the hot‐wall multiple‐wafers‐in‐tube LPCVD reactor. The modeling equations describe the coupled convective and diffusive mass fluxes in the annular reactor flow region as well as those between each pair of wafers. Complex reaction mechanisms involving both gas‐phase and surface reactions can be included in the model formulation. Multicomponent transport effects in the deposition of pure and doped polycrystalline Si are analyzed. The model predicts experimentally observed growth rates for pure polycrystalline Si quite well. However, because of insufficient data, a comparison of model predictions and experimental growth rates has not been feasible for in situ doped Si. The model is also used to predict the performance of a new continuous moving boat LPCVD reactor offering excellent film uniformity and process automation.
Article
The main applications of photoconductance measurements of silicon wafers are the determination of implicit device voltages, bulk minority carrier lifetimes, emitter recombination currents and surface recombination velocities. These applications are illustrated with selected experiments. Multicrystalline and single crystal silicon wafers are used with different surface c onditions. The practical situations considered here range from industrial process control to advanced research. Interpreting photoconductance in terms of implicit device voltage is particularly useful: the swept illumination conditions used in a quasi-steady-state photoconductance measurement permit the determination of complete I-V characteristic curves, ideality factors and saturation currents. The more classical interpretation in terms of an effective lifetime τeff allows to discriminate different recombination mechanisms. Shockley-Read-Hall bulk recombination with a large asymmetry between the fundamental electron and hole lifetimes is found to explain the strong variation of τeff at low injection level observed in some samples. Measurements in the high injection range permit the determination of the emitter saturation current density. This saturation current can impose quite restrictive limits on the measurable minority carrier lifetimes at low injection, particularly for low resistivity wafers. The surface recombination velocity of the Si/SiO 2 interface can also be a source of variability of τeff.
Article
THE large-scale use of photovoltaic devices for electricity generation is prohibitively expensive at present: generation from existing commercial devices costs about ten times more than conventional methods1. Here we describe a photovoltaic cell, created from low-to medium-purity materials through low-cost processes, which exhibits a commercially realistic energy-conversion efficiency. The device is based on a 10-µm-thick, optically transparent film of titanium dioxide particles a few nanometres in size, coated with a monolayer of a charge-transfer dye to sensitize the film for light harvesting. Because of the high surface area of the semiconductor film and the ideal spectral characteristics of the dye, the device harvests a high proportion of the incident solar energy flux (46%) and shows exceptionally high efficiencies for the conversion of incident photons to electrical current (more than 80%). The overall light-to-electric energy conversion yield is 7.1-7.9% in simulated solar light and 12% in diffuse daylight. The large current densities (greater than 12 mA cm-2) and exceptional stability (sustaining at least five million turnovers without decomposition), as well as the low cost, make practical applications feasible.
Article
A simulation model for the low-pressure chemical vapor deposition of polycrystalline silicon using a silane-hydrogen mixture in a multiwafer batch record has been developed. This model was employed to study the effects of temperature, flow parameters, reactor geometry, and wafer size upon the process, particularly the uniformity of silicon deposition. Potential improvements in the system performance were determined by utilizing optimum temperature staging and reactant injection schemes. The results also showed that nonuniform wafer spacing can improve deposition uniformity and wafer throughput while decreasing the process sensitivity to reactant flow rate variations.
Article
Surface voltage and surface photovoltage measurements have become important semiconductor characterization tools, largely because of the availability of commercial equipment and the contactless nature of the measurements. The range of the basic technique has been expanded through the addition of corona charge. The combination of surface charge and illumination allows surface voltage, surface barrier height, flatband voltage, oxide thickness, oxide charge density, interface trap density, mobile charge density, oxide integrity, minority carrier diffusion length, generation lifetime, recombination lifetime and doping density to be determined. In this review I shall briefly review the history of surface voltage, then discuss the principles of the technique and give some examples and applications.
Article
As photovoltaic penetration of the power grid increases, accurate predictions of return on investment require accurate prediction of decreased power output over time. Degradation rates must be known in order to predict power delivery. This article reviews degradation rates of flat-plate terrestrial modules and systems reported in published literature from field testing throughout the last 40 years. Nearly 2000 degradation rates, measured on individual modules or entire systems, have been assembled from the literature, showing a median value of 0.5%/year. The review consists of three parts: a brief historical outline, an analytical summary of degradation rates, and a detailed bibliography partitioned by technology.
Chapter
IntroductionFundamental Properties of SemiconductorsPN -Junction Diode ElectrostaticsSolar Cell FundamentalsAdditional TopicsSummaryReferences
Article
The history of silicon terrestrial module evolution over the last 50 years is briefly reviewed. Key technical developments that occurred over a rapid evolutionary period between 1975 and 1985 are identified. Information is included on improvements in both the energy conversion efficiency and prices of commercial modules over the 50-year timeframe. Copyright © 2005 John Wiley & Sons, Ltd.
Article
We review the technical progress made in the past several years in the area of mono- and polycrystalline thin-film photovoltaic (PV) technologies based on Si, III–V, II–VI, and I–III–VI2 semiconductors, as well as nano-PV. PV electricity is one of the best options for sustainable future energy requirements of the world. At present, the PV market is growing rapidly at an annual rate of 35–40%, with PV production around 10.66 GW in 2009. Si and GaAs monocrystalline solar cell efficiencies are very close to the theoretically predicted maximum values. Mono- and polycrystalline wafer Si solar cells remain the predominant PV technology with module production cost around $1.50 per peak watt. Thin-film PV was developed as a means of substantially reducing the cost of solar cells. Remarkable progress has been achieved in this field in recent years. CdTe and Cu(In,Ga)Se2 thin-film solar cells demonstrated record efficiencies of 16.5% and almost 20%, respectively. These values are the highest achieved for thin-film solar cells. Production cost of CdTe thin-film modules is presently around $0.76 per peak watt.
Article
The first fabrication and performance studies of PV devices with bulk heterojunction (BHJ) structure using an organic-solution-processable functionalized graphene (SPFGraphene) material as electron-acceptor material and P3OT and P3HT as donor materials, was presented. The results show that the graphane sheets are homogeneously dispersed together with organic materials, especially conjugated polymers, in organic solvents used for PV and other applications. It can be seen that the P3OT/SPFGrephene composite film has almost the same absorption as pure P3OT film in the wavelength range 400-650 nm. Processing highly delocalized electrons on a large 2D π-conjugated plane, graphene could also exhibit strong donor/acceptor interactions with conjugated polymers for PV device applications. When the SPFgraphene content increases to 5 wt%, the graphene sheets may be enough to produce an effective donor/acceptor interface.
Article
This paper considers intrinsic loss processes that lead to fundamental limits in solar cell efficiency. Five intrinsic loss processes are quantified, accounting for all incident solar radiation. An analytical approach is taken to highlight physical mechanisms, obscured in previous numerical studies. It is found that the free energy available per carrier is limited by a Carnot factor resulting from the conversion of thermal energy into entropy free work, a Boltzmann factor arising from the mismatch between absorption and emission angles and also carrier thermalisation. It is shown that in a degenerate band absorber, a free energy advantage is achieved over a discrete energy level absorber due to entropy transfer during carrier cooling. The non-absorption of photons with energy below the bandgap and photon emission from the device are shown to be current limiting processes. All losses are evaluated using the same approach providing a complete mathematical and graphical description of intrinsic mechanisms leading to limiting efficiency. Intrinsic losses in concentrator cells and spectrum splitting devices are considered and it is shown that dominant intrinsic losses are theoretically avoidable with novel device designs. Copyright © 2010 John Wiley & Sons, Ltd.
Article
Global environmental concerns and the escalating demand for energy, coupled with steady progress in renewable energy technologies, are opening up new opportunities for utilization of renewable energy resources. Solar energy is the most abundant, inexhaustible and clean of all the renewable energy resources till date. The power from sun intercepted by the earth is about 1.8 x 1011 MW, which is many times larger than the present rate of all the energy consumption. Photovoltaic technology is one of the finest ways to harness the solar power. This paper reviews the photovoltaic technology, its power generating capability, the different existing light absorbing materials used, its environmental aspect coupled with a variety of its applications. The different existing performance and reliability evaluation models, sizing and control, grid connection and distribution have also been discussed.
Article
In order to find an upper theoretical limit for the efficiency of p‐n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of hole‐electron pairs is radiative as required by the principle of detailed balance. The efficiency is also calculated for the case in which radiative recombination is only a fixed fraction f c of the total recombination, the rest being nonradiative. Efficiencies at the matched loads have been calculated with band gap and f c as parameters, the sun and cell being assumed to be blackbodies with temperatures of 6000°K and 300°K, respectively. The maximum efficiency is found to be 30% for an energy gap of 1.1 ev and f c = 1. Actual junctions do not obey the predicted current‐voltage relationship, and reasons for the difference and its relevance to efficiency are discussed.
Article
The maximum efficiencies of ideal solar cells are calculated for both single and multiple energy gap cells using a standard air mass 1.5 terrestrial solar spectrum. The calculations of efficiency are made by a simple graphical method, which clearly exhibits the contributions of the various intrinsic losses. The maximum efficiency, at a concentration of 1 sun, is 31%. At a concentration of 1000 suns with the cell at 300 K, the maximum efficiencies are 37, 50, 56, and 72% for cells with 1, 2, 3, and 36 energy gaps, respectively. The value of 72% is less than the limit of 93% imposed by thermodynamics for the conversion of direct solar radiation into work. Ideal multiple energy gap solar cells fall below the thermodynamic limit because of emission of light from the forward‐biased p‐n junctions. The light is radiated at all angles and causes an entropy increase as well as an energy loss.