Flash memories are an advanced form of EEPROM, which enable electric writing and erasure, by simplifying the structure using lump erasures to improve the high degree of integration. EEPROMs with a floating gate structure has intrinsically gain cell structure, then is easy to fit for the scaling rules of the MOS transistor. More integrated than DRAMs and conventional EEPROMs, flash memories offer
... [Show full abstract] lower per-bit unit prices. They have strong potential as replacements for magnetic disks, and probably will open up new fields of application.