Very low threshold current density 1.29m GaInNAs triple quantum well lasers grown by MBE

Chalmers Univ. of Technol., Goteborg
Electronics Letters (Impact Factor: 0.93). 02/2008; 44(6):416 - 417. DOI: 10.1049/el:20080207
Source: IEEE Xplore


Very low threshold Ga0.62In0.38N0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29 mum are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As- cleaved broad area lasers with a cavity length of 1 mm showed a record low threshold current density of 400 A/cm2 (~130 A/cm2 / QW), a high differential efficiency of 0.32 W/A/facet and a characteristic temperature of 94 K in the temperature range 10 to 110degC.

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Available from: Anders Larsson, Jul 19, 2015
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    • "For test structures, a 7 nm thick Ga(In)NAs QW is sandwiched between two 100 nm thick GaAs barriers that are surrounded by 100 nm thick AlGaAs barriers on both sides. For laser structures, a standard GRIN-SCH design is employed (see [5] [6] [7] [8] [9] for details). For multiple QW lasers, a 20 nm thick GaAs barrier is used to separate the two neighbor QWs. "
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    ABSTRACT: We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71μm at 300K. High quality 1.3μm GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100x1000μm2) is 300, 300, 400 and 940A/cm2 for single, double, triple and quadruple QW lasers, respectively. The maximum 3dB bandwidth reaches 17GHz and high-speed transmission at 10Gb/s up to 110°C under a constant voltage has been demonstrated.
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