Bulk, liquid‐encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi‐insulating (ρ∼10
7 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature‐dependent Hall‐effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient
... [Show full abstract] spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means that the compensation is primarily determined by native defects, not impurities. A tentative model includes a donor at E C -0.13 eV, attributed to V As -As Ga , and an acceptor at E V +0.07 eV, attributed to V Ga -Ga As .