AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

ArticleinElectronics Letters 38(2):91 - 92 · February 2002with3 Reads
Impact Factor: 0.93 · DOI: 10.1049/el:20020060 · Source: IEEE Xplore


    Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN high electron mobility
    transistor (HEMT) structures have been grown on resistive Si(111)
    substrate by molecular beam epitaxy (MBE) using ammonia
    (NH<sub>3</sub>). The use of an AlN/GaN intermediate layer allows a
    resistive buffer layer to be obtained. High sheet carrier density and
    high electron mobility arc obtained in the channel. A device with 0.5
    μm gate length has been realised exhibiting a maximum extrinsic
    transconductance of 160 mS/mm and drain-source current exceeding 600
    mA/mm. Small-signal measurements show f<sub>t</sub> of 17 GHz and
    f<sub>max</sub> of 40 GHz