AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

ArticleinElectronics Letters 38(2):91 - 92 · February 2002with3 Reads
DOI: 10.1049/el:20020060 · Source: IEEE Xplore
Abstract
Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH<sub>3</sub>). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility arc obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show f<sub>t</sub> of 17 GHz and f<sub>max</sub> of 40 GHz
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