Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors

ArticleinElectronics Letters 34(24):2356 - 2357 · December 1998with21 Reads
Impact Factor: 0.93 · DOI: 10.1049/el:19981616 · Source: IEEE Xplore

    Abstract

    Interface state generation effects due to hot carrier phenomena
    are studied in n-channel undoped hydrogenated polysilicon thin-film
    transistors under on-current bias-stress conditions. At the initial
    stages of stressing, interface states are created as well as hot hole
    trapping. As the stress process proceeds further, a saturation of the
    density of generated interface states was found after which hot electron
    injection into the gate oxide becomes the most important factor in
    further device degradation