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2017 Electronic Semiconductor Manufacturing

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2017 Electronic Semiconductor Manufacturing by Stephen Cox, Math and Science Reading List 2017 Volume 1 including History of High Performance Computing. Explore topics and active areas of research in electronic semiconductor manufacturing. Surveys and reviews. Amorphous oxide semiconductor route to electronics, Analysis of accelerated life test, Big data analytics for modeling parameter variation induced by process tool, Bioresorbable silicon electronics, Carbon nanotubes, Carrier mobility, Charge trapping, Comparative life cycle analysis, Control with variation and correlation analyses, Data mining for design and manufacturing, Diagnostics of analog circuits, Dielectric gradient metasurface, Direct laser writing, Dynamic wafer-handling robot, Fabrication and characterization, Fabrication strategy, Feature selection vector, Fruit fly optimization, Future commercial applications of carbon nanotubes, Gallium nitride devices for power electronics, Highly stretchable transistors, Hydrogen production by tuning photonic band gap of TiO2 and GIN, Hybrid sensor, Indirect band-gap transitions, Indium oxide, Mahalanobis distance, Manufacturing and empirical study, Meso-superstructured and planar films, Microfluidic cooling, Molecular beam epitaxy, Molecular junctions, Optical elements, Organometal halide perovskite films, Photodoping, Physics-based models, Reliable platform, Self-aligned amorphous InGaZnO thin-film transistor, ZnO thin film transistor.
2017 electronic semiconductor manufacturing
1
Math and Science Reading List 2017 by Stephen Cox
Volume 1 Including History of High Performance Computing
2017 Electronic Semiconductor Manufacturing
A comparative study of different physics-based NBTI models, S Mahapatra, N Goel, S Desai, S Gupta… - … on
Electron Devices, 2013 - ieeexplore.ieee.org
A novel fruit fly optimization algorithm for the semiconductor final testing scheduling problem, XL Zheng, L
Wang, SY Wang - Knowledge-Based Systems, 2014 - Elsevier
Accuracy analysis of dynamic-wafer-handling robotic system in semiconductor manufacturing, H Cheng, H
Chen, BW Mooring - Ieee Transactions on …, 2014 - ieeexplore.ieee.org
An amorphous oxide semiconductor thin-film transistor route to oxide electronics, JF Wager, B Yeh, RL
Hoffman, DA Keszler - Current Opinion in Solid State …, 2014 - Elsevier
Analysis of Accelerated Life Test for BME Capacitors, D Sheldon - 2013 - ntrs.nasa.gov
Atomically thin arsenene and antimonene: semimetalsemiconductor and indirectdirect band-gap
transitions, S Zhang, Z Yan, Y Li, Z Chen… - Angewandte Chemie …, 2015 - Wiley Online Library
Big data analytics for modeling WAT parameter variation induced by process tool in semiconductor
manufacturing and empirical study, CF Chien, YJ Chen, JZ Wu - Winter Simulation Conference ( …, 2016 -
ieeexplore.ieee.org
Bioresorbable silicon electronic sensors for the brain, SK Kang, RKJ Murphy, SW Hwang, SM Lee… - Nature,
2016 - nature.com
Carbon electrodemolecule junctions: A reliable platform for molecular electronics, C Jia, B Ma, N Xin, X
Guo - Acc. Chem. Res, 2015 - researchgate.net
Carbon nanotubes: present and future commercial applications, MFL De Volder, SH Tawfick, RH
Baughman… - …, 2013 - science.sciencemag.org
Comparative life cycle assessments: The case of paper and digital media, JG Bull, RA Kozak - Environmental
Impact Assessment Review, 2014 - Elsevier
Control of a semiconductor dry etch process using variation and correlation analyses, T Nilgianskul - 2016 -
dspace.mit.edu
Controlled synthesis of transition metal dichalcogenide thin films for electronic applications, R Gatensby, N
McEvoy, K Lee, T Hallam… - Applied Surface …, 2014 - Elsevier
Counterfeit integrated circuits: a rising threat in the global semiconductor supply chain, U Guin, K Huang, D
DiMase, JM Carulli… - Proceedings of the …, 2014 - ieeexplore.ieee.org
Data mining for design and manufacturing: methods and applications, D Braha - 2013 - books.google.com
Dielectric gradient metasurface optical elements, D Lin, P Fan, E Hasman, ML Brongersma - science, 2014 -
science.sciencemag.org
Direct laser writing of graphene electronics, MF El-Kady, RB Kaner - ACS nano, 2014 - ACS Publications
Electronic properties of meso-superstructured and planar organometal halide perovskite films: charge
trapping, photodoping, and carrier mobility, T Leijtens, SD Stranks, GE Eperon, R Lindblad… - ACS …, 2014 -
ACS Publications
2017 electronic semiconductor manufacturing
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Fabrication and characteristics analysis of a ZnO thin film transistor, S Zhao, XC Liu, DX Wang, Y Yuan -
Science and Electronic …, 2016 - crcnetbase.com
Fabrication of gas sensor based on p-type ZnO nanoparticles and n-type ZnO nanowires, CL Hsu, KC Chen,
TY Tsai, TJ Hsueh - Sensors and Actuators B: Chemical, 2013 - Elsevier
Fabrication strategy for micro soft robotics with semiconductor devices integration, TL Liu, X Wen, YC
Kung… - Micro Electro Mechanical …, 2017 - ieeexplore.ieee.org
Feature vector selection method using Mahalanobis distance for diagnostics of analog circuits based on LS-
SVM, B Long, S Tian, H Wang - Journal of Electronic Testing, 2012 - Springer
Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a
transit frequency of 135 MHz, N Münzenrieder, L Petti, C Zysset… - … on Electron Devices, 2013 -
ieeexplore.ieee.org
Fundamentals of semiconductor manufacturing and process control, GS May, CJ Spanos - 2006 -
books.google.com
Gallium nitride devices for power electronic applications, BJ Baliga - Semiconductor Science and
Technology, 2013 - iopscience.iop.org
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor
heterojunction, A Di Bartolomeo - Physics Reports, 2016 - Elsevier
Handbook of semiconductor manufacturing technology, Y Nishi, R Doering - 2000
Highly stretchable transistors using a microcracked organic semiconductor, A Chortos, J Lim, JWF To, M
Vosgueritchian… - Advanced …, 2014 - Wiley Online Library
Hybrid microcavity humidity sensor, S Mehrabani, P Kwong, M Gupta… - Applied Physics …, 2013 -
aip.scitation.org
Hydrogen production by tuning the photonic band gap with the electronic band gap of TiO2, GIN
Waterhouse, AK Wahab, M Al-Oufi, V Jovic… - Scientific reports, 2013 - nature.com
Indium oxidea transparent, wide-band gap semiconductor for (opto) electronic applications, O
Bierwagen - Semiconductor Science and Technology, 2015 - iopscience.iop.org
Interfacial band-edge energetics for solar fuels production, WA Smith, ID Sharp, NC Strandwitz… - Energy &
Environmental …, 2015 - pubs.rsc.org
Laser releasable temporary bond/de-bond materials for next 3D packages, K Hasegawa, T Mori, H Mizuno,
H Ishii… - … (Pan Pacific), 2017 …, 2017 - ieeexplore.ieee.org
Limits on fundamental limits to computation, IL Markov - Nature, 2014 - nature.com
Long-lived charge separated states in nanostructured semiconductor photoelectrodes for the production of
solar fuels, AJ Cowan, JR Durrant - Chemical Society Reviews, 2013 - pubs.rsc.org
Mechanochemistry of one-dimensional boron, structural and electronic transitions, M Liu, VI Artyukhov, BI
Yakobson - Journal of the American …, 2017 - ACS Publications
Metal-semiconductor Schottky barrier junctions and their applications, BL Sharma - 2013 -
books.google.com
Molecular beam epitaxy, BR Pamplin - 2013
More than moore, MM Waldrop - Nature, 2016 - search.proquest.com
2017 electronic semiconductor manufacturing
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Nanomaterials in transistors: From high-performance to thin-film applications, AD Franklin - Science, 2015
- science.sciencemag.org
Near-Junction Microfluidic Cooling for Wide Bandgap Devices, A Bar-Cohen, JJ Maurer, A Sivananthan - MRS
Advances, 2016 - Cambridge Univ Press
New concept ultraviolet photodetectors, H Chen, K Liu, L Hu, AA Al-Ghamdi, X Fang - Materials Today, 2015
- Elsevier
Non-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV
Technology, P Edelman, D Marinskiy, A Savtchouk… - Solid State …, 2016 - Trans Tech Publ
Novel Wide Bandgap Materials and Devices, CF Lo - 227th ECS Meeting (May 24-28, 2015), 2015 -
ecs.confex.com
Novel Wide Bandgap Technologies & Applications, N Ohtani - PRiME 2016/230th ECS Meeting (October 2-
7, 2016), 2016 - ecs.confex.com
Optoelectronic integration: physics, technology and applications, O Wada - 2013
Overview of atomic layer etching in the semiconductor industry, KJ Kanarik, T Lill, EA Hudson, S
Sriraman… - Journal of Vacuum …, 2015 - avs.scitation.org
Package systems having interposers, WC Wu, SY Hou, S Jeng, CH Yu - US Patent 9,048,233, 2015 - Google
Patents
Phase patterning for ohmic homojunction contact in MoTe2, S Cho, S Kim, JH Kim, J Zhao, J Seok, DH
Keum… - …, 2015 - science.sciencemag.org
Phosphorene: an unexplored 2D semiconductor with a high hole mobility, H Liu, AT Neal, Z Zhu, X Xu, D
Tomanek, PD Ye… - ACS …, 2014 - docs.lib.purdue.edu
Photorefractive effects and materials, DD Nolte - 2013
Physics, fabrication, and applications of multilayered structures, C Weisbuch - 2013 - books.google.com
Polymers for electronic & photonic application, CP Wong - 2013
Printable elastic conductors with a high conductivity for electronic textile applications, N Matsuhisa, M
Kaltenbrunner, T Yokota… - Nature …, 2015 - nature.com
Printed organic and molecular electronics, DR Gamota, P Brazis, K Kalyanasundaram, J Zhang - 2013 -
books.google.com
Production of few-layer phosphorene by liquid exfoliation of black phosphorus, JR Brent, N Savjani, EA
Lewis, SJ Haigh… - Chemical …, 2014 - pubs.rsc.org
Programmable and coherent crystallization of semiconductors, L Yu, MR Niazi, GON Ndjawa, R Li… -
Science …, 2017 - advances.sciencemag.org
Progress of alternative sintering approaches of inkjet-printed metal inks and their application for
manufacturing of flexible electronic devices, S Wünscher, R Abbel, J Perelaer… - Journal of Materials …,
2014 - pubs.rsc.org
Quantum information processing in a silicon-based system, TY Yang, A Andreev, Y Yamaoka… - … (IEDM),
2016 IEEE …, 2016 - ieeexplore.ieee.org
Quantum semiconductor structures: Fundamentals and applications, C Weisbuch, B Vinter - 2014
Review of graphene-based strain sensors, Z Jing, Z Guang-Yu, S Dong-Xia - Chinese Physics B, 2013 -
iopscience.iop.org
2017 electronic semiconductor manufacturing
4
Semiconductor device and a method of manufacturing the same, a circuit board and an electronic
apparatus, I Miyazawa, T Ikehara - US Patent 6,873,054, 2005 - Google Patents
Semiconductor die including a current routing line having non-metallic slots, JR Agness, M Gu - US Patent
8,779,574, 2014 - Google Patents
Semiconductor Etch Process Monitoring Based on Multi-Stage MPCA, TAO Dongqi, BO Cuimei, YI Hui -
Chinese Journal of Sensors and …, 2015 - en.cnki.com.cn
Semiconductor heterojunctions, BL Sharma, RK Purohit - 2015 - books.google.com
Semiconductor-based nanocomposites for photocatalytic H 2 production and CO 2 conversion, W Fan, Q
Zhang, Y Wang - Physical Chemistry Chemical Physics, 2013 - pubs.rsc.org
Semiconductors: A pillar of pure and applied physics, JR Chelikowsky, ML Cohen - Journal of Applied
Physics, 2015 - aip.scitation.org
Semiconductors: Materials, Physics, and Devices, J Liu, H Zhao, J Liu, A Maréchal… - … and Passive
Electronic …, 2016 - search.proquest.com
Sol-gel optics: processing and applications, LC Klein - 2013
Solid-state imaging device, method of manufacturing the same, and electronic apparatus, K Watanabe, Y
Maruyama - US Patent 8,928,784, 2015 - Google Patents
Synthesis of Semiconductor Quantum Dots, Study of Their Optical Properties and Their Application in
Sensitized Solar Cells, P Patil - 2015 - 210.212.192.152
Technology and applications of amorphous silicon, R Street - 2013 - books.google.com
The physics of micro/nano-fabrication, I Brodie, JJ Muray - 2013
The VLSI handbook, WK Chen - 2016, WK Chen - 2016
Toward a comprehensive understanding of molecular doping organic semiconductors (review), I
Salzmann, G Heimel - Journal of Electron Spectroscopy and Related …, 2015 - Elsevier
Towards a chemiresistive sensor-integrated electronic nose: A review, SW Chiu, KT Tang - Sensors, 2013 -
mdpi.com
Towards low-cost flexible substrates for nanoplasmonic sensing, L Polavarapu, LM Liz-Marzán - Physical
Chemistry Chemical Physics, 2013 - pubs.rsc.org
Towards parallel, CMOS-compatible fabrication of carbon nanotube single electron transistors, M Islam, D
Joung, S Khondaker - APS Meeting Abstracts, 2014 - adsabs.harvard.edu
Two-dimensional carbon leading to new photoconversion processes, H Tang, CM Hessel, J Wang, N Yang, R
Yu… - Chemical Society …, 2014 - pubs.rsc.org
Two-dimensional materials for electronic applications, MC Lemme, LJ Li, T Palacios, F Schwierz - Mrs
Bulletin, 2014 - search.proquest.com
Ultraclean surface processing of silicon wafers: secrets of VLSI manufacturing, T Hattori, S Heusler, JP
Webb, T Hattori - 2013
Wafer bonding: applications and technology, M Alexe, U Gösele - 2013
Wide Bandgap Devices, T Anderson - PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016 -
ecs.confex.com
Wide Bandgap Semiconductor Spintronics, V Litvinov - 2016
2017 electronic semiconductor manufacturing
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Wide-bandgap semiconductors: nanostructures, defects, and applications, M Liao, T Stergiopoulos, J
Alvarez… - Journal of …, 2015 - downloads.hindawi.com
Wiring molecules into circuits, E Lörtscher - Nature nanotechnology, 2013 - nature.com
Article
The objective of this study is to review retrospective exposure assessment methods used in wafer fabrication operations to determine whether adverse health effects including mortality or cancer incidence are related to employment in particular work activities and to recommend an appropriate approach for retrospective exposure assessment methods for epidemiological study. The goal of retrospective exposure assessment for such studies is to assign each study subject to a workgroup in such a way that differences in exposure within the workgroups are minimized, as well as to maximize the contrasts in exposure between workgroups. To reduce the misclassification of exposure and to determine if adverse health effects including mortality or cancer incidence are related to particular work activities of wafer fabrication workers, a minimum requirement of work history information on the wafer manufacturing eras, job and department at which they were exposed should be assessed. Retrospective assessment of the task that semiconductor workers performed should be conducted to determine not only the effect of a particular job on the development of adverse health effects including mortality or cancer incidence, but also to adjust for the healthy worker effect. In order to identify specific hazardous agents that may cause adverse health effects, past exposure to a specific agent or agent matrices should also be assessed.
Book
The contamination of wafer surfaces with particles arising from the processing equipment is the main reason for yield losses in the manufacturing of VLSI devices. The starting point for the control of contamination must be the surface of the wafer itself and not just the reduction of contamination in the ambient air or in the gases, chemicals and water used for production. A totally new concept for clean surface processing is introduced here. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic, as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Article
We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.
Article
Two-dimensional (2D) carbon allotropes, which are atomic thick layers made of network carbon atoms with hexagonal structured lattices, have been neglected until the direct investigation of mechanically exfoliated graphene by Novoselov et al. in 2004. Graphene is a 2D carbon allotrope with a unique structure of hexagonally arranged atoms that give it unparalleled electrical conductivity and carrier mobility, in addition to excellent mechanical flexibility and extremely high specific surface area. Graphene and its derivatives have been extensively studied for photovoltaic and photocatalytic applications due to their inherent nature to extract and transport charges from photon-absorbing semiconductors and conjugated polymers. Graphyne and graphdiyne, 2D carbon allotropes like graphene but containing not only doubly but also triply bonded carbon atoms, are predicted to possess intrinsic semiconductor bandgap and even more superior electrical properties than graphene. The current theoretical understanding and experimental status of graphyne and graphdiyne will be discussed in contrast of graphene, demonstrating those promising competitors to graphene in further lightening a new photoconversion. This review addresses the recent successes and current challenges of graphene, graphyne and graphdiyne, and provides insightful perspectives for the future applications of 2D carbon materials in photoelectric conversion and photocatalysis.
Article
In this paper, we review various types of graphene-based strain sensors. Graphene is a monolayer of carbon atoms, which exhibits prominent electrical and mechanical properties and can be a good candidate in compact strain sensor applications. However, a perfect graphene is robust and has a low piezoresistive sensitivity. So scientists have been driven to increase the sensitivity using different kinds of methods since the first graphene-based strain sensor was reported. We give a comprehensive review of graphene-based strain sensors with different structures and mechanisms. It is obvious that graphene offers some advantages and has potential for the strain sensor application in the near future.
  • S Cho
  • J H Kim
  • Kim
  • J Zhao
  • Seok
Phase patterning for ohmic homojunction contact in MoTe2, S Cho, S Kim, JH Kim, J Zhao, J Seok, DH Keum… -…, 2015 -science.sciencemag.org
fabrication, and applications of multilayered structures, C Weisbuch -2013 -books.google.com Polymers for electronic & photonic application
Physics, fabrication, and applications of multilayered structures, C Weisbuch -2013 -books.google.com Polymers for electronic & photonic application, CP Wong -2013
Quantum information processing in a silicon-based system
  • C Weisbuch
  • Vinter
Quantum information processing in a silicon-based system, TY Yang, A Andreev, Y Yamaoka… -… (IEDM), 2016 IEEE …, 2016 -ieeexplore.ieee.org Quantum semiconductor structures: Fundamentals and applications, C Weisbuch, B Vinter -2014
Semiconductor device and a method of manufacturing the same, a circuit board and an electronic apparatus, I Miyazawa, T Ikehara -US Patent 6
Semiconductor device and a method of manufacturing the same, a circuit board and an electronic apparatus, I Miyazawa, T Ikehara -US Patent 6,873,054, 2005 -Google Patents Semiconductor die including a current routing line having non-metallic slots, JR Agness, M Gu -US Patent 8,779,574, 2014 -Google Patents
  • Mpca Stage
  • B O Dongqi
  • Y I Cuimei
  • Hui
Semiconductor Etch Process Monitoring Based on Multi-Stage MPCA, TAO Dongqi, BO Cuimei, YI HuiChinese Journal of Sensors and …, 2015 -en.cnki.com.cn Semiconductor heterojunctions, BL Sharma, RK Purohit -2015 -books.google.com
Technology and applications of amorphous silicon, R Street -2013 -books.google.com The physics of micro/nano-fabrication, I Brodie
Technology and applications of amorphous silicon, R Street -2013 -books.google.com The physics of micro/nano-fabrication, I Brodie, JJ Muray -2013