SRAM standby leakage reduction plays a pivotal role in minimizing the power consumption of application processors. Generally, four kinds of techniques are often utilized for SRAM standby leakage reduction: Vdd lowering (VDDL), Vss rising (VSSR), BL floating (BLF) and reversing body bias (RBB). In this paper, we comprehensively analyze and compare the reduction effects of these techniques on ... [Show full abstract] different kinds of leakage. It is disclosed that the performance of these techniques depends on the leakage composition of the SRAM cell and temperature. This has been verified on a 65 nm SRAM test macro.