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Photoluminescence features and nonlinear-optical properties of the Ag0.05Ga0.05Ge0.95S2Er2S3 glasses
Abstract
Preparation technology, the structure determination, multiband luminescence and nonlinear optical properties (NLO) of the chalcogenide glasses are subject of present work. The Ag0.05Ga0.05Ge0.95S2Er2S3 glass samples with two different 0.12 and 0.27 at.% Er content were prepared by classical two-stage melt-quenching method. Glass state and morphology were confirmed by X-ray and EDS techniques. Influence of the Erbium doping on the luminescence and NLO properties was investigated. Based on the diagram of energy levels for the Er3+ ions, we proposed a model that explains photoluminescence (PL) emission mechanism. It should be emphasized that investigated glasses (in comparison with other materials) are exceptional in that all bands of PL are intense due to small energy losses at excitation and emission of ions Er3+. The photoinduced second and third harmonic generations have been measured in the reflected geometry and compared with reference – BiB3O6 (BBO): 10%Nd crystal.
... Chalogenide and oxide glasses have long been intensely studied as promising materials for use in optoelectronic devices. They are used as passive and active media for laser technology, optical amplifiers in the visible and near-infrared ranges, and for the design of contactless sensors, fiber optic networks, and absorption photocatalysts [1][2][3][4][5][6][7]. For this purpose, sulfur-containing semiconductors are best compared to selenides and tellurides, as they are characterized by smaller interatomic distances and higher bandgap energy, so they can serve as a basic matrix for the introduction of admixtures to improve their electrical and optical properties [8][9][10]. ...
Erbium-doped chalcohalide glasses of A g C l ( I ) − G a 2 S 3 − L a 2 S 3 systems were synthesized by using the melting-cooling method. The introduction of a halide component leads to a decrease in the absorption coefficient, and the addition of erbium leads to the emergence of narrow absorption bands associated with transitions in the f-shell of E r 3 + ions. Five PL bands were detected in erbium-doped samples when excited by a laser with a 532 nm wavelength, the most intense of which at 980 nm and 1540 nm are promising for use in optical amplifiers and fiber optic networks. It was established that the glass-forming matrix A g C l − G a 2 S 3 − L a 2 S 3 , doped with E r 3 + ions, is an effective light-emitting medium in the near-infrared range. At the same time, the concentration quenching of the PL was observed in the A g I − G a 2 S 3 − L a 2 S 3 system when erbium content increases.
Стекла 20 моль% Ga2S3 – 60 моль% GeS2 – 20 моль% Sb2S3: Er2S3 (1–4 моль%); Nd2S3 (2 моль%) отримано методом гартування. На основi дослiджень спектрiв оптичного поглинання встановлено смуги поглинання iз максимумами 655, 755, 810, 885, 980 i 1540 нм. При збудженнi фотолюмiнесценцiї випромiнюванням з λ = 805 нм у спектрi з’являються смуги з максимумами при 1070, 1350, 1540, 1700 i 2490 нм, що вiдповiдає переходам 4F3/2 → 4I11/2 (Nd3+), 4F3/2 → 4I13/2 (Nd3+), 4I13/2 → 4I15/2 (Er3+), 4I9/2 → 4I13/2 (Er3+), 4I13/2 → 4I9/2 (Nd3+) у f-оболонках обох рiдкоземельних металiв. Високi значення коефiцiєнта пропускання скляної матрицi та iнтенсивна фотолюмiнесценцiя, зумовлена Er3+ та Nd3+, роблять її придатною для розробки оптоелектронних пристроїв, якi працюють в ближньому та середньому IЧ-дiапазонах.
Series glasses with compositions (100–х-y) Ga2S3 – х La2S3 – y Er2S3 (х = 30, 35, 40; y = 0, 1, 3 mol.%) were synthesized and their optical properties were examined. Glass-forming region for the novel La2S3–Ga2S3 system was determined. Composition−dependent optical absorption spectra within the spectral range 480–1020 nm and photoluminescence (PL) under excitation by laser radiation with 532 nm wavelength were measured. The PL maxima were found at 660, 810, 860, 980 and 1540 nm. The origin of the excited states in Er³⁺ ions was analyzed using an energy diagram. PL decay kinetics processes were analyzed in detail, within the frame of the two exponents model. This one indicates that the Erbium ions emitting in both red and IR spectral ranges are embedded in the glass matrices a like as separate ions or form clusters of erbium ions. The presented research results along with literature data indicate a wide opportunity for potential applications like thermal and radiation sensors, non-linear optical triggers, up-converters, contactless thermometers or active media for IR lasers.
It was shown a possibility to use the (Ga54.59In44.66Er0.75)2S300 single crystal as optoelectronics detectors of gamma-irradiation using photoinduced nonlinear optical methods and photoluminescence. The crystal was irradiated by a ⁶⁰Co source at ambient conditions. The average energy of the incident γ-rays was about 1.25 MeV. The luminescence excitation was carried out using a 150 mW cw laser with wavelength 532 nm. The best results sensitive to the gamma irradiation were obtained for the third harmonic generations (THG) of the materials treated by bicolor Er: glass laser two beams propagated at angles about 21°–24°. The photoinduced gratings profile also were explored and their correlation with the gamma radiation and nonlinear optical response were explored. Comparison of photoluminescence and photoinduced nonlinear optical sensitivity to radiations was performed.
A region of glass formation was found during melt quenching from 1273 K in the AgGaSe 2 +GeS 2 AgGaS 2 +GeSe 2 system. It is localized along the binary GeSe 2 - GeS 2 system. Characteristic parameters (T g , T c , T m ) were determined for the glassy alloys, and T gr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined.
In the last few years increasing interest has been shown in lead-bismuth glasses due to the possibility of their use in different branches of optoelectronics. Investigation of new compositions of glasses are intended to obtain the greatest possible light transmittance in the infrared region. Due to their high values of nonlinear refractive index these glasses are possible candidates for nonlinear optics [1-3]. This letter reports an investigation of nonlinear optical properties describable by third-rank polar tensors. According to general symmetry considerations, nonlinear-optics phenomena describable by polar third-rank tensors cannot occur in amorphous media (including glasses). But in previous work devoted to nonlinear optical phenomena in high-T~ superconducting ceramics [4], photopolymers [5] and centrosymmetric crystalline media [6], the possibility of the occurrence of the mentioned phenomena, which are stimulated by external light or are photoinduced, was unambiguously shown. We investigate photoinduced second-harmonic generation (SHG), caused by light induced structural non-centrosymmetry components. SHG methods are very sensitive to possible phase transitions. In the present work experimental investigations of the photoinduced changes caused by nitrogen laser (it=337nm) UV irradiation were made. Photoinduced changes were caused by focused nitrogen laser UV-light with a photon flux between 1017 and 1023 photons/m 2. The upper power restriction is necessary to avoid sample heating. The intensity of the nitrogen laser was varied using neutral density filters. The laser intensity at the sample position was checked using a commercial fast-response joulemeter (Genetic, Inc, model ED-200). An apparatus for SHG was set up with an unfocused beam from a single-mode picosecond YAG:Nd laser (power = 30 MW, it = 1.06 ].tin). Measurements were performed for both polarized and unpolarized light. It was revealed that the practical intensity of SHG signals did not depend on light polarization. Separation between the SHG and the pump light was achieved using a grating monochromator.
Paper reports the second harmonic generation (SHG) in ferroelectric AgNa ( NO 2)2 crystals being driven by the spontaneous and electric field induced polarizations. Obtained results are interpreted within the phenomenological theory which considers the free energy describing the interaction between the spontaneous or electric field induced polarizations and spatially inhomogeneous electric polarizations resulted from propagating optical waves. Relatively high magnitudes of the effective second order nonlinear optical (NLO) susceptibilities in these crystals are combined with several phase matching geometries which allows to consider them as high-performance materials for potential NLO applications, such as parametric generation and amplification, frequency doubling, or other applications that require high-efficient frequency conversion. In addition, an anomalously large response of NLO susceptibilities with respect to an applied electric field has been found in the vicinity of the Curie point. This may also have a number of applications, especially in those devices where an efficient tunable control of SHG intensity is demanded.
The nanoscale crystals (NCs) of ZnO were embedded into polymethylmethacrylate (PMMA) polymeric matrix and nanocomposite films were prepared by modified spin coating method. The surface of the ZnO/PMMA nanocomposite films has been investigated using atomic force and scanning electron microscopy. The prepared films are highly transparent, the ultraviolet-visible spectra show their high optical quality. The second and third harmonic generation (SHG and THG) studies of ZnO/PMMA nanocomposite films with different concentrations of ZnO NCs were carried out at λ=1.064 μ m and the effective values of the second and third order nonlinear susceptibilities were estimated to be higher than that of ZnO bulk for the films at low concentration of ZnO NCs. This could indicate that surface effects in ZnO/PMMA nanocomposite films have a dominant role over bulk effects for the SHG and THG processes.
Electronic structure and optical properties were studied for novel (Ga70La30)2S300 and (Ga69.75La29.75Er0.5)2S300 single crystals synthesized by solution-melt technique. In particular, X-ray photoelectron spectroscopy (XPS) was used to measure core-level binding energies and valence-band spectra for as-synthesized and Ar⁺ ion-irradiated surfaces of these crystals. Presented XPS measurements show that the (Ga70La30)2S300 and (Ga69.75La29.75Er0.5)2S300 single crystals are rather stable in relation to Ar⁺ ion-irradiation. X-ray emission (XE) S Kβ1,3 and Ga Kβ2 bands were measured for the (Ga70La30)2S300 crystal giving information on the energy distribution of the S 3p and Ga 4p states, respectively. A comparison of these XE bands on a common energy scale with the XPS valence-band spectrum of (Ga70La30)2S300 indicates that the principal contribution of the S 3p and Ga 4p states occurs mainly at the top and in the central part of the valence band, respectively. In addition, optical absorption and photoluminescence spectra of the crystals were explored. Energy band gap values are estimated as 2.01 and 1.99 eV at room temperature for the (Ga70La30)2S300 and (Ga69.75La29.75Er0.5)2S300 crystals, respectively. Observed high-intensity green photoluminescence band when excited by a laser emitting at 810 nm suggests that the (Ga69.75La29.75Er0.5)2S300 crystal is a very attractive material for infrared to visible light conversion.
(Ga 55 In 45 ) 2 S 300 and (Ga 54.59 In 44.66 Er 0.75 ) 2 S 300 single crystals were successfully grown with the aim of exploring their potential for laser induced third harmonic generation (THG) and piezo-optical applications. Their Raman and luminescence spectra in the 150-300 K temperature range were studied. Influence of different gamma ray doses on the nonlinear optical properties were also explored. The optical properties of these crystals exhibit strong variation with temperature. It is concluded that (Ga 54.59 In 44.66 Er 0.75 ) 2 S 300 may be applied as promising materials for dosimetry applications in γ - radiation and optical temperature sensors.
Single crystals (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 possessing space group P61 were successfully grown and explored with respect to laser induced piezooptics. Their structural properties were studied by Raman spectroscopy and additionally, dependence of different gamma ray doses on the photoinduced piezo-optical responses were also explored. Structural parameters were evaluated using the Rietveld methods following the X-ray diffraction data. The chemical composition of the synthesized samples was determined by EDS analysis. We discussed the influence of Er³⁺-doping on the crystal structure and piezo-optical properties. It was established that these crystals behavior is very sensitive to γ−irradiation dose and therefore they are promising for applications as elastooptical radiation sensors.
Bismuth tellurite and bismuth borotellurite samples were synthesized and structure-property correlations were carried out by density, X-ray diffraction, dielectric measurements, differential scanning calorimetry, infrared, Raman and ¹¹B Magic Angle Spinning Nuclear Magnetic Resonance studies. Low concentration of Bi2O3 (5-mol%) forms bismuth tellurite glass while higher concentration of Bi2O3 (10 and 20-mol%) produces anti-glasses on splat-quenching the melt. The short-range structure of bismuth borotellurite glasses consists of TeO4, TeO3, BO4 and BO3 structural units. Raman studies show that TeO coordination (NTeO) in bismuth tellurite glass and anti-glass samples decreases from 3.48 to 3.43 with increase in Bi2O3 concentration from 5 to 20-mol%. On incorporating 20-mol% of B2O3 into bismuth tellurite sample, NTeO decreases to 3.33 and the glass forming ability enhances significantly as compared to that of bismuth tellurite system. On increasing B2O3 upto 40-mol%, the BO coordination decreases steadily. The addition of Bi2O3 produces the structural transformation: TeO4 → TeO3 in Bi2O3-TeO2 system while B2O3 produces the structural transformation: BO4 → BO3 in Bi2O3-B2O3-TeO2 series without significantly modifying NTeO. The glass transition temperature increases from 371 °C to 410 °C on increasing B2O3 from 20 to 40-mol%, this increase is due to increase in the concentration of stronger BO linkages at the expense of weaker TeO bonds. Decrease in the dielectric constant from 24.1 to 19.3 with B2O3 concentration is due to decrease in density while the polarizability of bismuth borotellurite series remains constant.
The determination of temperature is essential in many applications in the biomedical, technological,
and industrial fields. Optical thermometry appears to be an excellent alternative for conventional
electric temperature sensors because it is a non-contact method that offers a fast response,
electromagnetic passivity, and high temperature sensitivity. In this paper, we propose an optical
thermometer probe comprising an Er3+/Yb3+ co-doped tellurite glass attached to the tip of an optical
fibre and optically coupled to a laser source and a portable USB spectrometer. The ratio of the upconversion
green emission integrated peak areas when excited at 980nm was temperature dependent,
and it was used to calibrate the thermometer. The thermometer was operated in the range of 5–50°C
and 50–200°C, and it revealed excellent linearity (r2>0.99), suitable accuracy, and precisions of ±0.5
and ±1.1°C, respectively. By optimizing Er3+ concentration, we could obtain the high green emission
intensity, and in turn, high thermal sensitivity for the probe. The probe fabricated in the study exhibited
suitable properties for its application as a temperature sensor and superior performance compared to
other Er3+ -based optical thermometers in terms of thermal sensitivity.
In this article, we present the investigations of temperature dependent luminescence for the Ag0.05Ga0.05Ge0.95S2-Er2S3 glass system. The possibility to use temperature dependences of the photoluminescence of synthesized glasses for thermo sensors is considered. It is shown that logarithm of ratio of the integrated photoluminescence intensities for 980 and 600 nm (ln (I980/I660)) emission bands possess excellent linear dependence of temperature. At the same time, the nonlinear optical effects of two-photon absorption show substantial divergence from the sublinear dependences. These phenomena provide an opportunity to utilize Ag0.05Ga0.05Ge0.95S2-Er2S3 glasses for the fabrication of highly sensitive temperature sensor devices.
Paramagnetic defects in erbium-doped γ-irradiated chalcogenide glasses were investigated by EPR method. Vacancy nature of defects and the dependence of their concentration on the irradiation dose and erbium content were determined. The measurement of the static magnetization revealed the presence of paramagnetic and ferromagnetic subsystems caused by isolated Er3+ ions and ion clusters, respectively. PL spectra of 4f-4f transitions of Er3+ ions and the radiation mechanism of γ-irradiated glasses were investigated. It was determined that PL intensity depends on the number of radiation induced defects and on the nature of the distribution of erbium which were determined by EPR and magnetic susceptibility.
A series of Sm3+ and Dy3+ doped LaBWO6 phosphors were synthesized by high temperature solid state reaction. Recorded XRD patterns proved that the titled compound in a single phase has been obtained. Sm3+ and Dy3+ doped LaBWO6 could emit orange and white light, respectively. The optimal doping concentration of Sm3+ or Dy3+ was experimentally ascertained to be 6 mol%. The critical distance of energy transfer for Sm3+ or Dy3+ doped sample is 1.540 nm. In addition, there is no cross energy transfer between the Sm3+ and Dy3+ ions in the co-doped samples. The results indicated that the electric dipole–dipole interaction is predominant energy transfer mechanism for concentration quenching of Sm3+ or Dy3+ doped LaBWO6 phosphor. The charge transfer band was observed in the excitation spectra of Sm3+ or Dy3+ doped LaBWO6 phosphors. Present investigation indicated that Sm3+ and Dy3+ doped LaBWO6 can be applied in solid state lighting and LaBWO6 is a promising host for display applications.
Bi2ZnOB2O6 nonlinear optical single crystals were grown by means of the
Kyropoulos method from stoichiometric melt. The second and third
harmonic generation (SHG/THG) of Bi2ZnOB2O6 crystals were investigated
by the SHG/THG Maker fringes technique. Moreover, SHG microscopy studies
were carried out providing two-dimensional SHG images as a function of
the incident laser polarization. The high nonlinear optical efficiency
combined with the possibility to grow high quality crystals make
Bi2ZnOB2O6 an excellent candidate for photonic applications.
The absorption spectra and up-conversion luminescence of glassy alloys (100−X)Ag0.05Ga0.05Ge0.95S2–(X)Er2S3, where Х=0.42, 0.25, and 0.18 mol% (0.27; 0.16; and 0.12 at% Er, respectively) at excitation using diode laser with wavelength 980 nm in the range 450–1050 nm were investigated. We propose mechanism of emission in the glasses based on the model of intra-4f shell transitions in Er3+ ion. The influence of the formation of the structural units on the optical properties of the glasses using Raman spectroscopy that is important when designing the erbium-containing environments in laser technology was studied.
The optical properties of Er-doped Ge–Ga–Se glasses prepared by melt quenching techniques have been investigated. They were doped using Er2S3 and were stable as shown by temperature modulated differential scanning calorimetry. The influence of doping with Er on the photoluminescence, optical absorption and structural properties of Ge–Ga–Se glasses has been investigated and the strong correlation between the Er and Ga concentrations (CEr and CGa) and the properties of these glasses has been revealed. High CGa/CEr>10 ensures the homogeneous distribution of Er in host volume. Low CGa/CEr<3 leads to formation of chemical clusters found in the form of Er enriched crystalline inclusions. Intermediate region 3<CGa/CEr<10 is characterized by the formation of “physical clusters” or “clusters of interaction” where the Er ions are not connected chemically but the energy can effectively migrate form one ion to another.
Fluorophosphates glasses YF3–BaF2–Ba(PO3)2 doped with Er3+ and Er3+–Yb3+ were prepared and the structures of the samples were briefly investigated. The experimental intensity parameters were calculated according to the Judd–Ofelt theory, from which the radiative transition probabilities, fluorescence branching ratios, and radiative lifetimes of Er3+ were obtained. Bright green and red upconversion emissions was observed in Er3+–Yb3+ co-doped samples excited by 980 nm laser diode, and two-photons absorption processes were determined for the emissions by examining the dependence of the emission intensity on the excitation power. The concentration effects on the intensity and decay time of the upconversion emission revealed that growing Er3+ concentration declined the probability of sequential energy transfer from Yb3+ to Er3+, and thus increasing the intensity ratio of the red emission to the green ones. The temperature effects on the intensity ratios of different emission bands showed that the maximum transducer sensitivity based on the fluorescence intensity ratio (FIR) was calculated to be 0.0015/°C at 6 °C.
Photoinduced nonlinear optical phenomena in amorphous As2Te3-CaCl2-PbCl2 glasses have been studied using experimental and theoretical quantum chemical and molecular-dynamics methods. Especially photoinduced two-photon absorption (TPA) and second-harmonic generation (SHG) were measured in the IR region from 5.5-21 mum. CO laser (lambda=5.5 mum) and parametrically generated wavelengths (5.2-13.7 mum) were used as a source of pumping light. We have found that with an increase of photoinducing power, the SHG for probe CO2 laser (for the double frequency lambda=5.3 mum) signal increases and achieves its maximum value at photoinducing power 1.45 GW/cm2 per pulse. The absolute values of the SHG were more than one order less comparing to chi222 tensor for Ag3AsSe3 single crystals. With decreasing temperature, the SHG signal strongly increases within the 16-24 K temperature range. Femtosecond probe-pump measurements indicate on an existence of SHG maximum at pump-probe time delay about 25 ps. Spectral positions of the TPA maxima are strongly dependent on the pump power. Contrary to the SHG behavior, for the TPA we observe at least two time delayed maxima: at 20-27 and 65 ps. We explain these dependencies within a framework of the quantum chemical approach taken into account with photoinduced anharmonic electron-vibration interaction. We have revealed that As-Te tetrahedra play a key role in the observed photoinduced nonlinear optics effects. The obtained results show that the mentioned effects can be used as a powerful tool for investigations of picosecond IR nonlinear optics processes. Simultaneously the investigated glasses are promising materials for IR femtosecond quantum electronics.
Red luminescence (at wavelength about 622nm) from Eu3+ ions embedded in PbO–Bi2O3–Ga2O3–BaO glass hosts is reported for room and liquid helium temperatures. The substantial influence of energy transfer processes between the host and Eu3+ ions is shown experimentally through the dependences of photoluminescence on light polarization and excitation wavelength. Only polarized, excited pulsed XeII laser light (λ=714nm) gives substantial luminescence with efficiency up to 14.3%. The role of phonon-relaxation subsystem in the observed luminescence is discussed.
Theoretically predicted and experimentally observed infrared-induced second-harmonic generation of glasses in the mid-infrared spectral region can be described by fifth-order nonlinear optical susceptibility. The effect is observed in the mid-IR region when the value of the electronic energy gap is comparable to the energies of actual phonons participating in the anharmonic (non-centrosymmetric) electron -phonon interactions. As subjects for investigation, chalcohalide Sb2Te2Se-BaF2-PbCl2 glasses were chosen. They are transparent, over a spectral range of 1.1 - 10.9 mum. The second-harmonic generation (SHG) output signal within the 1.5 - 4.8 mum spectral range has significant spectral dependence. Correlation of the SHG spectral maxima positions with spectral positions of anharmonic phonon frequencies confirms that the fifth-order steady-state process occurs due to cascading processes and IR-induced charge density non-centrosymmetry. A maximum value of the SHG is achieved at a pump-probe delay time of 18 - 36 ps, which is typical for anharmonic electron - phonon interactions. As temperature rises, the values of the photoinduced SHG signal susceptibility increases up to 3 x 10(-39) m(4)/ V-4. The SHG signal reaches a saturation point for the IR-pump power densities of about 0.8 GW/cm(2), which corresponds to the output SHG intensities of about 6 x 10(-4) with respect to fundamental one. The values of the diagonal fifth-order tensor component chi(xxxxx)((2omega)) are at least one order of magnitude larger than the off-diagonal tensor components.
Theoretically predicted and experimentally observed infrared-induced
second-harmonic generation of glasses in the mid-infrared spectral
region can be described by fifth-order nonlinear optical susceptibility.
The effect is observed in the mid-IR region when the value of the
electronic energy gap is comparable to the energies of actual phonons
participating in the anharmonic (non-centrosymmetric) electron-phonon
interactions. As subjects for investigation, chalcohalide
Sb2Te2Se-BaF2-PbCl2 glasses were chosen. They are transparent, over a
spectral range of 1.1-10.9 µm. The second-harmonic generation
(SHG) output signal within the 1.5-4.8 µm spectral range has
significant spectral dependence. Correlation of the SHG spectral maxima
positions with spectral positions of anharmonic phonon frequencies
confirms that the fifth-order steady-state process occurs due to
cascading processes and IR-induced charge density non-centrosymmetry. A
maximum value of the SHG is achieved at a pump-probe delay time of 18-36
ps, which is typical for anharmonic electron-phonon interactions. As
temperature rises, the values of the photoinduced SHG signal
susceptibility increases up to 3×10-39 m4/V4. The SHG signal
reaches a saturation point for the IR-pump power densities of about 0.8
GW/cm2, which corresponds to the output SHG intensities of about
6×10-4 with respect to fundamental one. The values of the
diagonal fifth-order tensor component are at least one order of
magnitude larger than the off-diagonal tensor components.
In this paper results of experimental investigations into erbium glass lasers and their likely applications are discussed. Regularities of the inversion energy accumulation, also as channels of energy losses, are covered in detail. Different erbium lasers, both flashtube and neodymium laser-pumped, are compared. Parameters of some erbium laser glasses are presented, including the new LGS-E7, which requires a smaller pumping energy density (less than 100–200 J cm-2). Test data from experimental models are summarized.
Tellurite fibers with 7500 ppm Er3+ concentration and diverse 2500–15,000 ppm Tm3+ concentrations were manufactured, and their amplified spontaneous emission (ASE) intensities 1550 nm band around were obtained for 980 and 790 nm pump laser. Maxima 187 nm bandwidth at −3 dB points using Er3+–Tm3+ co-doped tellurite optical fibers pumping at 790 nm was obtained, and energy transfer (ET) process between 4I13/2 Er3+ and 3F4 Tm3+ levels related with the amplifier quantum efficiency was studied from experimental and calculated lifetime.
The unique and striking material properties of chalcogenide glasses have been studied for decades, providing applications in the electronics industry, imaging and more recently in photonics. This Review summarizes progress in photonic devices that exploit the unique optical properties of chalcogenide glasses for a range of important applications, focusing on recent examples in mid-infrared sensing, integrated optics and ultrahigh-bandwidth signal processing.
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