Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 10 12 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling properties

Conference Paper · December 2018with 20 Reads
DOI: 10.1109/IEDM.2018.8614618
Conference: 2018 IEEE International Electron Devices Meeting (IEDM)
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