Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 10 12 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling properties

Conference Paper · December 2018with 20 Reads
DOI: 10.1109/IEDM.2018.8614618
Conference: 2018 IEEE International Electron Devices Meeting (IEDM)

Do you want to read the rest of this conference paper?

Request full-text
Request Full-text Paper PDF
This research hasn't been cited in any other publications.
  • Physical Review Letters
    • S R Ovshinsky
  • IEEE International Memory Workshop
    • J Tranchant
  • Nature Communications
    • S Kumar