Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 10 12 cycles), excellent Vth stability (5%), fast (< 10 ns) switching, and promising scaling properties
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IEEE International Memory Workshop
The goal of this project is to develop ReRAM device models on the compact, continuum and atomistic scale. We are improving the models according to the physical insights we get from experimental stu
dies. ... [more] View project May 2016 · IEEE Electron Device Letters
The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOX-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The
... [Show full abstract] deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher ROFF/RON(> 103 with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOX/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125 °C for 104 s. Furthermore, the TaOX ReRAM device with both the electrodes shows high endurance up to 106 cycles based on two states. Read more October 2014
Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta2O5 devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive
... [Show full abstract] states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta2O5 complementary switching are also discussed in details. Read more Last Updated: 26 Jan 2019 Looking for the full-text?
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