Conference Paper

Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation

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  • J.O.B Technologies
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Abstract

We investigated the effects of Sn, Si and cluster-C implantation into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing. For the P-well case a 7.3x increase in bulk drift mobility to 3384cm 2 /V-s with cluster-C implant and for the N-well case a 2.8x increase in bulk drift mobility to 1256cm2/V-s with Sn implant. Measuring layer mobility depth profiles shows mobility in the top 10-20nm of the surface can be up to 7Kcm2/V-s for N-well and 45Kcm2/V-s for P-well.

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Conference Paper
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Ultra-shallow n+ ion implanted junctions with high dopant activation in high mobility thin Ge epilayer was realized by rapid and controlled Ge melt depth using 308nm Excimer laser annealing. Extremely high Sb activation of 1E21/cm3 for 10nm USJ is > 3x higher than best P activation level of 3E20/cm3 for a 10nm USJ. High level of surface Sb also induced surface tensile strain-Ge which degraded electron mobility while Sn induced surface compressive strain-Ge improving Sb electron mobility by 2x but degraded P electron mobility by 3x. Differential Hall layer mobility depth plots shows Sn implant improved the mobility uniformity in the top 30nm surface. Controlled Ge melt depth can be extended to 7nm n+ USJ using sub-keV ultra-low energy implantation and results will be shown in the future with n+ activation of 1E21/cm3.
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presentation material slide #59
  • J Borland
J. Borland, presentation material slide #59, ECS Symposium on ULSI Process Integration 9, Oct 2015, ECS Transactions, vol. 69, no. 10, p.11.
  • J Borland
J. Borland, ECS Symposium on High Purity and High Mobility Semiconductors 14, Oct 2016, ECS Transactions, vol.75, no.4, p 199.